本論文研究以具奈米結構之氧化鋅和二氧化矽混合層（ZnO-SiO2 nanocomposite）作為發光二極體（Light emitting diode，LED）元件之發光層，並與氧化鋅（Zinc oxide，ZnO）作為發光層之元件相互比較光電特性之差異。
本論文藉由共濺鍍法（Co-sputter）製作具奈米結構之氧化鋅和二氧化矽混合層（ZnO-SiO2 nanocomposite），並與p型氮化鎵（p-GaN）和摻鎵元素之n型氧化鋅（n-ZnO:Ga，GZO）製作為p-i-n異質結構之發光二極體。藉由電激發光（Electroluminescence，EL）量測顯示，此元件於9 mA電流注入情況下具有376 nm之發光頻譜，並且經由穿隧式電子顯微鏡（Transmittance electron microscopy，TEM）之拍攝結果得知，氧化鋅奈米粒子（ZnO nanoparticles）徑粒分佈於3 nm至7 nm之間。另外，本論文針對於具奈米結構之氧化鋅和二氧化矽混合層（ZnO-SiO2 nanocomposite）進行雷射熱處理，以此提升氧化鋅奈米粒子（ZnO nanoparticles）之結晶性，進而增強氧化鋅奈米粒子（ZnO nanoparticles）之發光強度和抑制氧化鋅（ZnO）內氧缺陷之黃光頻譜強度。

In this research, we used ZnO-SiO2 nanocomposite as the light emitting layer in light-emitting device and researched the electro-optical characteristic of this device. Furthermore, we compared this device to the other ZnO structure devices in electro-optical characteristic.
We fabricated ZnO-SiO2 nanocomposite by co-sputter and sandwiched this layer by p-GaN and n-ZnO:Ga（GZO） to realize p-i-n heterojunction structure light-emitting device. Operating at 9 mA current injection, this device exhibited 376 nm emission peak in the electroluminence（EL） spectrum. By transmittance electron microscopy（TEM） measurement, the diameter of ZnO nanoparticles in ZnO-SiO2 nanocomposite was in the range of 3-7 nm. Moreover, we used the nanosecond pulse laser to anneal ZnO-SiO2 nanocomposite layer at the same time. We improved the ZnO crystal quality, and then enhancing light emitting intensity of ZnO nanoparticles and decreasing the yellow band emission which came from oxygen vacancies of ZnO inside the ZnO-SiO2 nanocomposite by laser anneal treatment.

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第四章:
[1] M. K. Wu, Y. T. Shih, W. C. Li, H. C. Chen, M. J. Chen, H. Kuan, J. R. Yang, and M. Shiojiri, “Ultraviolet electroluminescence from n-ZnO–SiO2–ZnO nanocomposite/p-GaN heterojunction light-emitting diodes at forward and reverse bias,” IEEE Photon. Technol. Lett., vol. 20, no. 21, pp. 1772-1774, Nov. 2008
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