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研究生： 林峻佑
Lin, Jyun-Yu
論文名稱： 低溫對矽薄膜電晶體之能帶尾,介面能態與載子遷移率的影響
Impacts of Low Temperatures on Band-Tail, Interface States and Mobility of Ultrathin Si TFTs
指導教授： 高國興
Kao, Kuo-Hsing
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2023
畢業學年度： 111
語文別： 英文
論文頁數： 58
中文關鍵詞： 薄膜電晶體 、低溫 、粒子群最佳化演算法
外文關鍵詞： Thin-Film Transistor, Low temperature, Particle Swarm Optimization
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    • 摘要 I Abstract II 致謝 III Content IV Figure Captions VI Table Captions IX Chapter I : INTRODUCTION & MOTIVATION 1 1-1 Thin-Film Transistor 1 1-2 Operation and Application of Thin-Film Transistor 2 1-3 Defects in Noncrystalline Si Transistors 2 1-4 Figure of Merit of Transistors 3 1-5 Variable Range Hopping (VRH) 5 1-6 Motivation 6 1-7 Independent Double Gate Thin Film Transistor 8 Chapter II : MODELING & ALGORITHM 10 2-1 Device Modeling 10 2-2 Particle swarm optimization 11 2-3 The Implementation Process of Algorithm & Parameter setup 11 2-4 Loss function selection 12 2-5 Hyperparameter selection 14 Chapter III : RESULT & DISCUSSION 20 3-1 Measurement 20 3-2 IV Data fitting & Parameter Extraction 25 3-3 Temperature Dependence of Band tail 32 3-4 Temperature Dependence of Interface State 33 3-5 Temperature Dependence of Apparent Mobility 34 Chapter IV : CONCLUSIONS & FUTURE WORK 36 4-1 Conclusions 36 4-2 Future work 36 References 37 Appendix I 39 Appendix II 43 Appendix III 46

    [1] W. E. Howard. Thin-Film Transistors (C. R. Kagan, P. Andry) Ch. 1.
    [2] T. P. Brody, J. A. Asars, G. D. Dixon. “A 6X6 Inch 20 Lines-per-Inch Liquid-Crystal Display Panel” in IEEE Transactions on Electron Devices, vol. 20, no. 11, pp. 995-1001, Nov. 1973, doi: 10.1109/T-ED.1973.17780.
    [3] W. Cheng-Yu Ma, Yan-Jia Huang, Po-Jen Chen, Jhe-Wei Jhu, Yan-Shiuan Chang, and Ting-Hsuan Chang. “Impacts of vertically stacked Monolithic 3D-IC Process on Characteristics of Underlying Thin-Film Transistor” in IEEE Journal of the Electron Devices Society, vol. 8, pp. 724-730, 2020, doi: 10.1109/JEDS.2020.3009350.
    [4] R. Ishihara, M. R. T. Mofrad, J. Derakhshandeh, N. Golshani and C. I. M. Beenakker. "Monolithic 3D-ICs with single grain Si thin film transistors" in 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Xi'an, China, 2012, pp. 1-4, doi: 10.1109/ICSICT.2012.6467714.
    [5] John Y. W. Seto. “The electrical properties of polycrystalline silicon films” in Journal of Applied Physics 1 December 1975; 46 (12): 5247–5254.
    [6] K. R. Olasupo and M. K. Hatalis. “Leakage current mechanism in sub-micron polysilicon thin-film transistors” in IEEE Transactions on Electron Devices, vol. 43, no. 8, pp. 1218-1223, Aug. 1996, doi: 10.1109/16.506772.
    [7] C. M. Hu. Modern Semiconductor Devices for Integrated Circuits CH. 2.
    [8] B. E. Sernelius. “Band-gap shifts in heavily p-type doped semiconductors of the zinc-blende and diamond type” in Phys. Rev. B Condens Matter. Oct. 1986;34(8):5610-5620. doi: 10.1103/physrevb.34.5610.
    [9] P. Sarangapani, Y. Chu, J. Charles, G. Klimeck, T. Kubis. “Band-tail Formation and Band-gap Narrowing Driven by Polar Optical Phonons and Charged Impurities in Atomically Resolved III-IV Semiconductors and Nanodevices” in Phys. Rev. Applied 12, 044045 Oct. 2019. DOI: 10.1103/PhysRevApplied.12.044045.
    [10] P. V. Mieghem. “Theory of band tails in heavily doped semiconductors” in Rev. Mod. Phys., Vol. 64, Iss. 3, July 1992.
    [11] A. Beckers, F. Jazaeri, C. Enz. “Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors” in IEEE Electron Device Letters, vol. 41, no. 2, pp. 276-279, Feb. 2020, doi: 10.1109/LED.2019.2963379.
    [12] A. Kamgar. “Subthreshold behavior of silicon MOSFETs at 4.2K” in Solid-State Electronics, Vol. 25, Iss. 7, July 1982.
    [13] A. Beckers, F. Jazaeri, C. Enz. “Inflection Phenomenon in Cryogenic MOSFET Behavior” in IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 1357-1360, March 2020, doi: 10.1109/TED.2020.2965475.
    [14] N. Mott, F.R.S., M. Pepper, S. Pollitt, R. H. Walls, C. J. Adkins. “The Anderson
    transition” in Rev. Mod. Phys., Vol. 80, Iss. 4, Oct. 2008.[15] J. Woo. “Low Temperature Logic Technology (LTLT)” in DARPA, March 16, 2021.
    [16] F. Sebastiano et al. "Cryogenic CMOS interfaces for quantum devices," in 2017 7th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI), Vieste, Italy, 2017, pp. 59-62, doi: 10.1109/IWASI.2017.7974215.
    [17] J. Kennedy, R. Eberhart. “Particle Swarm Optimization” Proceedings of ICNN'95 - International Conference on Neural Networks, Perth, WA, Australia, 1995, pp. 1942-1948 vol.4, doi: 10.1109/ICNN.1995.488968.
    [18] I-Wei Wu, Tiao-Yuan Huang, W. B. Jackson, A. G. Lewis, A. Chiang. “Passivation Kinetics of Two Types of Defects in Polysilicon TFT by Plasma Hydrogenation” in IEEE Electron Device Letters, vol. 12, no. 4, pp. 181-183, April 1991, doi: 10.1109/55.75757.
    [19] H. Tada, A. E. Kumpel, R. E. Lathrop, J. B. Slanina, P. Nieva, P. Zavracky, I. N. Miaoulis , P. Y. Wong. “Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures” in Journal of Applied Physics 1 May 2000; 87 (9): 4189–4193.
    [20] P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, R. Wise. “Fundamentals of Silicon Material Properties for Successful Exploitation of Strain Engineering in Modern CMOS Manufacturing” in IEEE Transactions on Electron Devices, vol. 53, no. 5, pp. 944-964, May 2006, doi: 10.1109/TED.2006.872912.
    [21] Jeng-Ting Li, Li-Chih Liu, Jen-Sue Chen, Jiann-Shing Jeng, Po-Yung Liao, Hsiao-Cheng Chiang, Ting-Chang Chang, Mohamad Insan Nugraha, and Maria Antonietta Loi. “Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor” in Appl. Phys. Lett. 9 January 2017; 110 (2): 023504.

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