本篇論文提出將熱活化延遲發光材料(DDCzTrz)以及發光材料(PVK)摻雜量子點發光二極體中透過螢光共振能量轉移機制已達到高效率的量子點發光二極體。利用捕捉過量注入的電子形成激子並進行輻射複合，再藉由螢光共振能量轉移機制將發光材料中激子的能量傳遞給鄰近的量子點，以避免電子堆積進行非輻射複合以提高量子點發光二極體之效率以及生命週期。
本研究第一部分為摻雜PVK 在發光層中，並以不同旋轉速率測試最佳的發光層厚度，最後得到42.3nm 的發光層為最佳參數，最大亮度達到88,348 cd/m2 及最大效率達到10.24cd/A。接著第二部分改善電洞傳輸層，以不同濃度的DDCzTrz 摻雜在電洞傳輸層，測試最佳濃度為20%，亮度達到271,164 cd/m2 以及電流效率達到12.81cd/A。之後將同時摻雜PVK 以及DDCzTRz 在發光層及電洞傳輸層中，並同時調整PVK 的摻雜濃度，但摻雜PVK 會使溶液密度劇增，而使溶液製成的厚度難以控制進而影響載子傳輸，是造成元件表現不佳的主要原因。摻雜0.5wt%的PVK 為最佳參數其亮度達到170,131 cd/m2 以及電流效率達到9.5 cd/A。最後，將電荷傳輸層以及發光層透過不同旋轉時間來做厚度優化，促進載子注入的平衡，此部分的改善將元件性能提升到本研究最高值，其最大亮度為 1,196,888 cd/m2，最大電流效率為 30.83 cd/A。

High current efficiency Quantum dot light-emitting diodes are demonstrated through the fluorescence resonance energy transfer mechanism and thermally activated delayed luminescent materials (DDCzTrz) and luminescent materials (PVK) doped into quantum dot light-emitting diodes in this thesis. Utilizing the excess injected electrons can form excitons in the hole transport layer and form radiative recombination, then the energy of excitons of luminescent materials is transferred to adjacent quantum dots to avoid electron accumulation and non-radiative recombination to improve the efficiency and lifetime of quantum dot lightemitting diodes by the fluorescence resonance energy transfer mechanism.
The first part of this study is doping PVK in emissive layer, testing the optimal emissive layer thickness with different spin rates. Then, the 42.3nm emissive layer is obtained as the optimal parameter, the maximum luminance reaches 88,348 cd/m2 and the maximum efficiency reaches 10.24 cd/A. Then the second part is to improve the hole transport layer, doping the hole transport layer with different concentrations of DDCzTrz, the best concentration tested is 20%, the brightness reaches 271,164 cd/m2 and the current efficiency reaches 12.81cd/A. After that, PVK and DDCzTRz will be simultaneously doped into the emissive layer and the hole transport layer, and the doping concentration of PVK will be adjusted at the same time, but doping PVK will increase the solution density sharply, making the thickness and morphology of the solution difficult to control and affect the charge balance is the main reason of poor performance. PVK doped with 0.5wt% is the best parameter, its luminance reaches 170,131 cd/m2 and current efficiency reaches 9.5 cd/A. Finally, the thickness of the charge transport layer and the emissive layer are optimized through different spinning times to promote the balance of carrier injection. This part of the improvement will improve the performance of the device to the highest value in this study. Its maximum brightness is 1,196,888 cd/m2, and the maximum current efficiency is 30.83 cd/A.

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