在本論文中，我們利用共濺鍍系統製備氧化銦鎂薄膜，並研製及分析電晶體和紫外光電晶體的特性。實驗的第一部分，我們沉積氧化銦鎂薄膜於玻璃基板上並藉由靶材瓦數的調整探討薄膜的特性。根據材料分析的結果顯示材料為非晶態且有良好平整的粗糙度。我們將之製造成金半金結構的紫外光檢測器，經由實驗量測的結果可以發現，當靶材氧化銦的瓦數增加時光檢測器的截止波長會有偏移的現象，在偏壓為3V下，截止波長分別是315、330、340nm，這與我們透過光透射譜分析有相同的結果。
實驗的第二部分，我們研製了電晶體及紫外光電晶體，透過靶材瓦數的調整，總共製作了九種不同參數的薄膜電晶體。其中最佳的特性表現為E元件，其場效遷移率、次臨界擺幅及電流開關比分別為8.45 cm2/Vs、0.43 V/decade， 4.1×106，接著我們也將薄膜應用於光電晶體上，發現光電晶體的特性與銦的含量有著密切的關聯，隨著銦含量的增加截止波長也從315nm紅移至340nm，從試片E可知光響應度，及紫外光對可見光之比分別為0.39 A/W和3.1×103。
最後，為了更進一步提升薄膜電晶體的各種電特性，於是我們採用兩種改善的方式。第一，我們將氧化亞銅作為覆蓋層沉積在元件上，由於氧化亞銅是電洞型態的半導體，在這種設計之下，它能夠提升其薄膜電晶體的特性跟穩定性，所量測其場效載子遷移率29.8 cm2/Vs，次臨界擺幅0.22 V/decade，電流開關比1.2×106，可以發現比起元件E有更為出色的電特性；第二，我們將原本的元件結構中分別嵌入兩種不同製程所製備的緩衝層，其中以氧化鋁為緩衝層的薄膜電晶體電特性較為優異，原因可歸因於緩衝層製備方式的不同進而影響介面品質。綜合以上兩種改善方式，可知有助於提升電晶體的特性。

In this thesis, we utilize co-sputter system to prepare amorphous indium magnesium oxide (MIO) thin film; moreover, thin film transistors (TFTs) and UV phototransistors are fabricated and analyzed. First, we deposit a-MIO thin film on the glass substrate and investigate the properties of thin film with adjusting the power of the target. The result of materials analysis show amorphous structure and smooth surface. And then we demonstrate MSM UV photodetectors. It is found that the cutoff wavelength of the phototransistors can shift by changing the RF sputter power of the In2O3 target. With 3 V applied bias, it is found that measured cutoff wavelength are 315 nm, 330 nm, 340 nm, respectively. We have same results compared with the transmission spectrum analysis.
In the second part of the experiment, the fabrication of thin film transistors and UV phototransistors are demonstrated by changing the power of targets. In our experiment, we totally realize nine different parameters of thin film transistors. The optimized device, sample E, exhibits the great properties with a μFE of 8.45 cm2/Vs, a SS of 0.43 V/decade, and an on/off current ratio of 4.1×106. And then we apply a-MIO thin film to the thin film transistors, it is found that the performance of the phototransistors are strongly dependent on the In2O3. The cutoff wavelength of the phototransistors is red-shift from 315 nm to 340 nm. The photo-responsivity and DUV-to-visible rejection ratio of the fabricated are 0.39 A/W and 3.1×103.
At last, to further enhance the various electrical properties of thin film transistors, so we use two ways to improve. First, because the cuprous oxide is p-type semiconductor then we deposit it on the thin film transistors to be the cap layer. In this design, it is found that thin film transistors is enhanced for electrical properties and stability and it exhibits μFE of 29.8 cm2/Vs, a SS of 0.22 V/decade, and an on/off current ratio of 1.2×106. Compared with the sample E, it is found that we can achieve higher electrical properties. Second, the fabricated of a-MIO thin film transistors is inserted respectively two different buffer layer are demonstrated, and the thin film transistors with Al2O3 buffer layer has better electrical properties. The result can be contributed to the processing method of the buffer layer affects interface quality. As mentioned above two improvement methods, we know that it can enhance thin film transistors properties efficiently.

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