本論文為分別利用選擇性磊晶成長(Selective Area Growth, SAG)以及化學濕式蝕刻法 (Chemical Crystallographic wet etching) 應用於氮化鎵發光二極體提升光萃取效率之研究。
　　利用選擇性成長自然形成特定方向的斜面增加光萃取效率。選擇性成長發光二極體 (310 μm × 310 μm) 於20 mA電流注入下，光輸出功率相較於傳統發光二極體增加20.6 % ; 除此之外，選擇性成長亦不需乾式蝕刻製程步驟。而利用化學濕式蝕刻氮化鎵磊晶層使其形成倒金字塔形側壁 (Undercut Sidewalls)；當元件 (250 μm × 575 μm) 於20 mA操作電流下，光輸出功率相較於傳統發光二極體增加21.4 %。最後同時結合上述磊晶及製程兩種技術應用於發光二極體以期更有效提升光萃取效率。

Using the selective-area growth (SAG) method and sidewall-etching technique, we demonstrate GaN-based light-emitting diodes (LEDs) with enhanced light extraction efficiency. The SAG GaN-based LEDs with obliquely self-assembled facets improve light extraction efficiency. With an injection current of 20 mA, the light output power of the SAG GaN-based LEDs (310 × 310 μm) can be markedly improved by 20.6% magnitude compared with conventional GaN-based LEDs. Furthermore, the SAG technique eliminates the need for the dry etching procedure.
　　The LEDs with oblique undercut sidewalls formed by chemical crystallographic wet etching technique could improve the escape probability of photons from semiconductors to air. With an injection current of 20 mA, the light output power of the undercut sidewall LEDs (250 × 575 μm) can be markedly improved by a magnitude of 21.4% compared with conventional GaN-based LEDs.
　　Finally, the SAG growth method and sidewall-etching technique are combined to further increase light extraction efficiency.

第一章
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第二章

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