本研究以中山科學研究院現有研發中的快速熱處理機台來作數值熱傳模擬,模擬直徑300厘米之晶圓快速加熱10秒後升溫到1300K的過程,對於整個分析會以支撐架的不同的材質、不同位置的放置及不同的高度對晶圓溫度均勻性所產生的影響來作分析及探討。由於腔體內所產生的對流熱傳效應比輻射熱傳效應小很多,所以在本研究不考慮對流熱傳,主要考慮晶圓、加熱燈與腔體內之間的熱輻射交換以及晶圓本身的熱傳導。從其研究結果顯示,若所選用的支撐架材質之熱擴散係數高,會使支撐架內部溫度偏高,相對地帶走晶圓所吸收的能量增加,倘若支撐架之熱容值更高,這樣晶圓被支撐架所吸走的能量更多。所以基本上ρcp值及熱擴散係數這兩個參數是影響晶圓溫度分佈的主要因素。

In this work, we simulate the heat transfer phenomenon in a RTP equipment developed by CSIST.
Most of our work focus on the temperature distribution on the wafer, which is heated by lamps from 300K to 1300K in 10 seconds. Effects of the susceptor, including its materials, positions, and height, are thoroughly investigated. Convective heat transfer in the chamber is not taken into consideration, because it is very small compared to the radiative heat transfer during the heating process. According to our investigation, high thermal diffusivity of the susceptor induces high temperature in itself, and absorbs large amount of heat from the wafer. If the heat capacity of the susceptor is large, the heat loss is even worse. Thus, the thermal diffusivity and heat capacity of the susceptor are crucial for the temperature uniformity on the wafer.

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