本研究是去探討氧化鎵的一維奈米結構及氧化銦顆粒，實驗中藉由簡單的加熱式管狀爐(Thermal CVD)來成長氧化鎵奈米線和氧化銦顆粒，針對不同的實驗參數的改變，可以得到許多不同的一維奈米結構，例如：奈米針、奈米柱、奈米帶，並且從奈米線的頂端未含催化劑可知成長機制不是一般用於成長奈米線的VLS 方法，而是屬於VS 的成長模式，並且在奈米線和奈米柱的成長中，由顆粒和VS 成長模式共同控制其成核及成長，另外由實驗中改變氧分壓及真
空度的多寡會造成由奈米線改變成奈米帶，奈米線的結構我們藉由TEM 的電子繞射圖可知其為單斜晶的β相氧化鎵所組成，從電性的量測中我們可以得到有關於氧化鎵奈米線的field emission 性質；在另外一方面，我們同時利用金屬銦反應形成氧化銦的顆粒，實驗中可以獲得許多不同的型態的顆粒，但是並無氧化銦奈米線的生成，因此在本研究中我們對於氧化鎵及氧化銦所造成的不同結構做比較及探討。

　　This research uses thermal chemical vapor deposition (CVD) to grow gallium oxide one dimensional nanostructures and indium oxide crystals.For the former,we studied various morphologies of the gallium oxide one dimensional nanostructures such like nano-wires, nano-rods, nano-belts by changing experimental parameters.Due to no catalysts on the Ga2O3 nano-wires and nano-wires only nucleate on crystals,so it can be proposed that Ga2O3 nano-wires followed the complex growth mechanisms composed by vapor-solid(VS) models and crystals nucleation and growth.But we can observe nano-belts only followed by VS growth methods.While changing oxygen partial pressure and working pressure,the shapes of gallium oxide one dimensional nanostructures can be transformed from nano-wires to nano-belts. We can obtain TEM electron diffraction pattern indicates that as-synthesized products are monoclinic β-gallium oxide nanowires. Finally we can obtain Ga2O3 nano-wires had good field emission property
　　For the indium oxide crystals,we also studied various morphologies of the indium oxide crystals.We tried to use the same experimental parameters on Ga2O3 nano-wires to grow indium oxide nanowires but we can find as-synthesized products were indium oxide crystals by TEM and XRD measurements.

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