類鑽碳薄膜具有機械性質良好、耐磨耗、硬度高、表面平滑、以及耐腐蝕等特性，使其能適用在模具、刀具及光學領域上，目前已在工業界被廣泛的使用，而在硬度與耐磨耗的持續提升一直是被研究的重點。
本研究嘗試開發以下兩種不同的高解離率物理氣相沉積技術(IPVD)，期望能製備出擁有高sp3含量、高硬度及耐磨耗之類鑽碳薄膜。
第一種技術為以高功率脈衝磁控濺鍍(High power impulse magnetron sputtering, HiPIMS)結合中空陰極磁控濺鍍(Hollow cathode magnetron)來使電漿解離率更往上提升，期望能以此沉積更高品質、細緻的類鑽碳薄膜，另外，並以一般的脈衝直流磁控濺鍍沉積薄膜作為對照組。由實驗結果可以看到，由於HiPIMS的高解離率使得其沉積出的類鑽碳薄膜較一般脈衝直流磁控濺鍍所沉積出來的薄膜更為細緻，且sp3含量較高；除此之外，在較低的壓力所沉積出來的類鑽碳薄膜品質也更好，因壓力高容易使鍍膜離子產生氣相聚合反應，使得薄膜結構鬆散，sp2含量較高。
第二種技術為結合中空陰極高電子使用率與傳統電弧放電之高離子能量及高解離率之優點，產生中空陰極電弧放電機制(hollow cathode arc, HAC)，另外透過外加磁場來產生旋轉中空陰極電弧，期望能透過此機構設計來達到抑制微粒產生的效果並同時具有防止微粒到達基板的功能，解決傳統陰極電弧法當中需透過磁過濾系統來濾掉微粒而在沉積速率上作犧牲的缺點。惟本實驗目前仍處於現象觀察階段，鍍膜階段需等待機構進一步設計方能進行效果驗證，然而，在本實驗中已可觀察到弧根在中空陰極管中快速旋轉之現象，相信待機構設計完成，其鍍膜效果之進步指日可待。

In this study, two ionized physical vapor deposition (IPVD) techniques were developed in order to deposit diamond-like carbon (DLC) films with high sp3 ratio, high mechanical hardness and high wear resistance. One is the combination of high power impulse magne-tron sputtering (HiPIMS) and hollow cathode magnetron (HCM) with a view to further increasing the degree of ionization of plasma, while the other is spiral hollow cathode arc with the combination of hollow cathode arc (HCA) and supplementary magnetic fields for the purpose of removing microparticles which can be a big issue in traditional cathodic arc.
Scanning electron microscope (SEM) and Raman spectrum were used to examine the mi-crostructure and mechanical properties of the films deposited in the first technique while the second technique is still in the stage of plasma phenomena observation. In the first technique, the results showed that the DLC films deposited indeed has higher sp3 ratio and mechanical properties compared to the one with dc power supply. In the second technique, the phenomena of spiral effect of cathode spots has been successfully observed and de-veloped, however, whether the spiral effect can be helpful for the removing of microparti-cle while film deposition remains to be seen in the future experiments.

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