本研究主要利用金屬銀本身會氧化的特性擴展金屬銀對於光電半導體氧化鋅、氮化鎵以及銀基奈米柱的應用特性之探討。論文當中針對不同的材料分為氧化鋅氮化鎵以及金屬銀三大部分。第一部分為紫外光氧化鋅光檢測器元件特性因為熱效應而導致元件破壞，在嵌入氧化銀金屬顆粒後可以補償恢復本身元件特性以及增強對於光的選擇性，且氧化銀奈米顆粒是利用鍍銀膜經由回火過程而相轉換形成。此外，氧化鋅奈米柱以及奈米花的結構可以利用水平式爐管經由600oC 以上的溫度成長而成，在光激發光的量測當中，氧化鋅奈米結構都擁有紫外光和藍光訊號。紫外光訊號主要是來自於自由激子的輻射複合所產生，而藍光峰值訊號是由鋅相關缺陷所導致發光。
第二部分是利用碘輔助離子蝕刻系統去製備氧化鎵被覆的氮化鎵奈米尖錐，而所使用的雙重遮罩分別是氧化銀以及氧化鎵兩種材料。此雙重遮罩主要是在800oC 回火40 分鐘製程而形成，上層氧化銀遮罩主要的功能是用來保護下層的氧化鎵避免被過度蝕刻，殘留下的氧化鎵遮罩高度約為20 至30nm，此種氧化鎵被覆於氮化鎵奈米尖錐的特殊結構可用來增強場發射特性，使得起始電場較低，造成這種低起始電場的原因，主要來是於電子會聚集於氧化鎵以及II
氮化鎵的界面進而使得電子分佈重新排列導致功函數下降。
最後一個部分是利用射頻濺鍍系統去製作垂直性的金屬銀柱，而電漿的來源是來自於通入的氧氣以及氬氣混合而成，金屬奈米銀柱準直地成長在熱還原後的金屬銀晶粒上，此熱還原的金屬銀晶粒主要是原本生成的氧化銀晶種經由濺鍍過程所產生的熱去分解還原成金屬銀以及氧氣，該氧氣會被釋出而只留下熱還原的金屬銀晶粒，此氧化銀晶種的組成為四氧化三銀的相，此種材料為非穩定性氧化銀狀態，故更容易因熱產生分解析出還原金屬銀，金屬銀柱陣列的光激發光量測分別在一般環境下以及真空環境下量測，避免在量測過程中因雷射回火而產生的熱氧化效果，而入射光波長為325 奈米雷射。在光激發光的頻譜當中可以發現綠光訊號中心出現於2.17 電子伏特波段，此綠光峰值主要是費米能階的電子與d 帶的電動輻射複合所生成。此論文成功地將金屬銀廣泛應用於光電半導體以及金屬銀基系統中，此外，本論文也對半導體及金屬奈米結構的形成機制詳加介紹。

The goal of the dissertation is widely applied the metal silver to the wide bandgap semiconductors, including zinc oxide and gallium nitride and the silver-based metal nanorods by means of the internal oxidized property of metal
silver. Hence, the dissertation can be divided into three parts according to the three materials (ZnO, GaN, Ag). At first, the thermal-induced degradation of UV ZnO-based photodetector can be recovered by embedded the Ag2O nanoparticles which were transferred from the thin-inserted Ag layer and the rejection ratio is also compensated for enhancing the selection of the incident light source. Additionally, ZnO nanostructures, involving rods and flowers can be fabricated on silver oxide nuclei with the higher temperature 600oC using the horizontal furnace via vapor transportation method. ZnO nanorods and nanoflowers owe the UV emission and blue emissions in photoluminescence spectra, simultaneously. UV peak can be ascribed to the radiative recombination of the free excitons when the blue emission is imputed to the recombination between Zn-related defect levels.
Another part is used the double masks (silver oxide and gallium oxide) which were thermal treated under 800oC for 40min in air to manufacture the oxide-capped GaN nanotips by iodine-assisted focused ion beam system. The function of upper silver oxide mask is utilized to protect the lower gallium oxide from the over-etching and the height of allium oxide ranges from ten to twenty nanometer.
The residual gallium oxide existed on the top of GaN nanotips and further improved the field emission haracteristic due to lowering work function of the specific oxide-capping conformation.
The final part is the fabrication of align Ag nanorods by RF sputtering with the mixed gases (argon and oxygen) as the plasma source. Ag nanorods vertically stand on the thermal-reduced Ag grains which were transformed from silver oxide nanoseeds because silver oxide is a low melting point material especially in Ag3O4 phase. Photoluminescence of Ag nanorod arrays is investigated not only in air but also vacuum to avoid the oxidization of Ag nanorods under 325nm laser illumination. The green emission is located at the center of 2.17eV and it is attributed to the radiative recombination between Fermi level electrons and d-band hole.

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