本論文之研究方向是以化學氣相沉積法來製備FeSi和β-FeSi2奈米線並探討其生長機制及成長參數對形貌之影響，另外提出兩種方法做為奈米線之形貌改良，並對形貌改良前後之奈米線做性質比較。
在成長參數的部分，本實驗分別以溫度與持溫時間，流量和沉積位置，以及壓力三部份來探討。發現實驗溫度從750℃開始上升至850℃時β-FeSi2有奈米線之生成，但是到了950℃即有團塊化的行為，其原因為奈米線生長到後期互相反應的結果。在流量和沉積位置則是以氧化鋁基板在不同的流量和位置上進行沉積，用EDX分析基板上的反應物訊號來確定反應物濃度分佈。在不同壓力的實驗則是利用CS(Covered-substrate)的方法來分析高壓下奈米線線徑增加的原因，並在高溫高壓的環境下成長出FeSi奈米線。
形貌改良則是以Pre-Deposition和Covered-substrate來對奈米線進行形貌改良，以不使用催化劑或是模板的方式，單純控制成長參數來成長奈米線陣列，最後分別比較改良前後奈米線之磁性以及場發射性質。

In this thesis, we synthesized β-FeSi2 and FeSi nanowires by chemical vapor deposition (CVD). The effect of CVD parameters including temperature, flow rate, during time, working pressure and deposition position in the growth of nanowires have been investigated and we consider all the CVD parameters would affect the supersaturation in the tube furnace. FeSi nanowires were gown under high supersaturation and β-FeSi2 nanowires were grown under low supersaturation. In the morphology improvement, two methods, “Pre-deposition method” and “Covered substrate method” were used to deposit nanowire arrays. “Pre-deposition method” could form heterogenerous nucleation sites on the surface of thin film. “Coverer substrate method” is that one substrate is covered by the other substrate. In the interlayer between two substrates, the flow direction is uniform and that would help to grow nanowire arrays. The reaction concentration would decrease from boundary of substrate to the middle and the concentration distribution on the substrate caused different nanostructure. In the property measurement, the magnetic property and field emission property were measured by SQUID and field emission measurement system with Keithley-237. The morphology-improved nanowires have better magnetic properties and field emission properties.

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