本論文主要採超高真空離子束濺鍍（Ion Beam Sputtering, IBS）技術與奈米壓痕技術(Nano-indentation)進行碳、碳/矽、鈦、鈦/矽奈米單層與複合薄膜的成長與機械性質檢測研究，探討薄膜厚度、退火溫度及材料微結構變化對於機械性質之影響，並探討退火後機械性質變化對於熱穩定性質的影響。
在硬膜鍍於軟基材上的實驗結果顯示，於常溫下初鍍單層碳薄膜結構中，當薄膜厚度增加時硬度會隨之提高，ID/IG比值則隨之降低；而雙層碳/矽(C/Si)和矽/碳(Si/C)薄膜硬度比單層碳薄膜低則是由於矽薄膜的加入。經熱處理後，退火750 °C的單層碳薄膜結構，由原本單晶矽轉變成多晶結構而形成多重晶界(Grain boundary)使碳、矽原子相互擴散反應形成碳化矽(SiC)微粒析出；而在退火900 °C時，SiC微粒析出密度提高而使硬度提升。於雙層碳矽(C/Si)薄膜結構中，經退火750 °C後，薄膜受石墨化(graphitization)影響而導致薄膜硬度降低；隨著退火溫度上升到900 °C時，SiC微粒析出而使薄膜硬度上升。而矽/碳(Si/C)薄膜在熱處理後發現其機械性質變化不大且不易受溫度影響。
在軟膜鍍於硬基材上的實驗結果顯示，於常溫下初鍍單層鈦薄膜結構中，薄膜厚度增加硬度值隨之增加，而雙層鈦/矽(Ti/Si)薄膜則因有金屬化合物Ti5Si3的形成而導致硬度比單層鈦薄膜高。經熱處理後，薄膜退火350 °C時，硬度為最高，則因有金屬化合物的形成，隨著退火溫度升高薄膜表面會有氧化鈦顆粒的形成而造成表面形貌鬆散，而導致硬度值、韌性値皆下降，而當退火溫度750 °C，表面氧化鈦量也越多，表面的顆粒愈大顆，則相對硬度值、韌性値也相對愈低。

In this research, the mechanical properties of single layer carbon (C), titanium (Ti) and two layer carbon/silicon (C/Si) and titanium/silicon (Ti/Si) composite structure deposited by ultra-high-vacuum ion beam sputtering (UHV-IBS) have been investigated using nanoindentation measurement technique. The aim of this study is to investigate the effect of film thickness variation, annealing temperature and microstructure characterization on the evolution of mechanical property of single and composite film. The effect of thermal stability on the mechanical properties of thin film has also been discussed.
In one aspect of hard film deposited on the soft substrate, it was noted that the ID/IG ratio decreased with increasing carbon film thickness on single-layer structure at room temperature (RT) lead to hardness enhancement. The lower the ID/IG was, the more the sp3 bonds were. Compared with single-layer structure, hardness of two-layer structure decreased due to silicon layer addition. Under thermal treatment process, the grain boundaries of polycrystalline Si transformed from single crystalline Si for the interdiffusion reaction between carbon and silicon elements and SiC was formed at 750 °C. When annealing temperature increased at 900 °C, the higher density of SiC particles were separated lead to hardness enhancement. Under two-layer structure case, it can be found that hardness of film decreased at 750 °C due to graphitization then the SiC was formed at 900 °C on the surface of carbon/silicon (C/Si) structure lead to hardness enhancement. From the other side, Interdiffusion reaction was not easily occurred on silicon/carbon structure under thermal annealing process.
In another aspect of soft film deposited on the hard substrate, it was noted that hardness of single Ti film increased with increasing film thickness due to better crystallization at room temperature (RT). The hardness of titanium/silicon (Ti/Si) composite film enhanced because of the Ti5Si3 formation. Under thermal treatment process, it can be found that the hardness of both titanium film and titanium/silicon composite film increased at 350 °C due to the metal silicide formation. When the annealing temperature increased, hardness and / ratio reduced through the TiO2 particle formed on the surface of thin film let morphology looser. The formation of TiO2 was becoming more and particle size was bigger as the annealing temperature at 750 °C let the hardness and / ratio lower.

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