本研究是以甲烷當碳源、矽基板當矽源，並利用Sm-Co混和粉末作為液相溶劑，進行氣-液-固機制，製備碳化矽薄膜。實驗結果顯示，利用特殊的循環控溫製程，在Sm:Co=64:36 at.%共晶點的成分時，可以在低於1100℃且不需碳化矽晶種環境下生長出β-SiC的多晶結構之薄膜。實驗結果發現，生成的碳化矽薄膜為3C結構，薄膜厚度約為500 nm，且矽基板與碳化矽薄膜兩者的晶格成長方向同為(111)面，兩者之間存在厚度約為3~5 nm的非晶緩衝層；且若缺少此溶劑則無法生成碳化矽薄膜。
本研究首先對於使用之Sm-Co溶劑進行相關分析，接著，探討在生長碳化矽薄膜過程中，此溶劑的作用，以及氫氣在實驗中所扮演的角色；並且利用不同的持溫時間與升溫曲線，探討所設計的循環曲線之每一步驟的重要性與功能，加以求證設計之假設；最後根據實驗結果及文獻參考推測本實驗之碳化矽薄膜的成長機制。
實驗結果發現，氫氣在生長碳化矽的過程中，扮演極為重要的角色，當氫氣流量過多或過少時，皆無法生長出結晶性佳的碳化矽薄膜。再者，所使用的溶劑Co會先與矽基板反應，因而在矽基板上留下孔隙，這些缺陷有助於碳的析出及為碳化矽優先成長的地方，因此，此溶劑可以促進碳化矽在矽基板上的生長，且此溶劑可以在較低的溫度形成液相，又有助於碳和矽的相互擴散，因此，此溶劑加快碳化矽的成長速率，且又降低碳化矽的生長溫度。此外，碳與矽在所設計的循環升降溫曲線中，進行擴散、鍵結、與修復：首先，在持溫過程中，碳與矽向溶劑互相擴散，並因為降溫而析出大量的碳，與矽鍵結形成碳化矽，又在高溫時，溶劑輔助碳化矽進行退火處理與缺陷修復，因而逐步形成結晶性較佳的碳化矽薄膜。

In this present study, silicon carbide layers were grown on a Si substrate by vapor-liquid-solid mechanism using Sm-Co solvent at a temperature below 1100oC without SiC seeding. The synthesis was carried out in a tube furnace through cyclic heating process using methane as a carbon source, silicon wafer as a silicon source, and Sm-Co mixed powder with eutectic composition (Sm: Co=64:36 at%) as a solvent. Results indicate that β-SiC film of about 500 nm has been successfully fabricated on Si (111) substrate, and there is an amorphous SiC layer of 3~5 nm as buffer layer between SiC film and Si substrate. HR-images and EBSD results indicate that both SiC film and Si substrate have the same cubic structure and grow in the same <111> orientation.
The effect of Sm-Co solvent, influence of different H2 flow rate and effect of different step during cyclic heating process, for growth of SiC film have been discussed in this study. Moreover, the growth mechanism of SiC film was hypothesized owing to experimental results and literature survey. The growth of SiC from rare earth Sm-based solvent is an innovative approach, and Co can promote the formation of SiC due to the formation of pits on the substrate during the process.
Results indicate that H2 play an important role for reduction as well as for etching. In other worlds, when the flow rate of H2 is too low or too high, the formation of SiC could not take place. The possible growth mechanism of SiC film was proposed as follows: Initially, Sm-Co solvent would melt and leave many pits on the substrate as the temperature increases up to 1000oC during step 1. Then, the carbon atoms decomposed from methane along with silicon atoms diffused to solvent during step 2. And further, carbon atoms precipitate due to lower solubility at low temperature during cooling in step 3, and react with Si to form amorphous SiC during step 4, subsequently. This amorphous SiC layer is important, because it could relax the stress between Si substrate and SiC film. Finally, the grown amorphous SiC was restored into more perfect crystallinity and expand at higher temperature during step 5~6.

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