本實驗使用射頻濺鍍法以氬氣混合不同氧氣壓力(0.01~0.92 mtorr) 環境下將鋅濺鍍至p-Si(100)基板成長氧化鋅薄膜，而後在不同氣體環境：氧氣(0.3~152 torr)、氬氣(0.1 torr)及空氣下以攝氏1000度將薄膜退火處理，最後對樣品做光激發螢光光譜分析。我們發現以不同氧氣壓力成長的氧化鋅薄膜，其成長壓力對樣品並無太大影響，但退火時之氧壓力則對樣品影響甚大，不同之成長氧壓力其最佳之退火氧壓力亦不同。成長氧壓力為0.27 mtorr時所得之樣品，在這三種退火環境下都呈現最佳的品質。

In this study, pure metal zinc was deposited on p-type Si:B (100) substrate by radio-frequency sputtering technique with various oxygen gas pressure. The samples were then annealed in oxygen or argon environment at 1000 degrees Celsius for one hour with/without different gas pressure. The optimized annealing gas pressure is investigated by low temperature photoluminescence (PL). We found that the PL spectra are similar for the as-grown samples. The optimized annealing pressure for the sample annealed in oxygen ambient increased from 55 torr to 152 torr as the growth oxygen gas pressure varied from 0.01 mtorr to 0.27 mtorr, and then decreased to 0.3 torr as the growth oxygen gas pressure is up to 0.92 mtorr. The sample with 0.27 mtorr growth oxygen gas pressure shows best quality as annealed in argon ambient.

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