Formation of the ZnO film and ZnO nanorod has been achieved using a simple CVD method at low temperatures in this study. It is concluded that both growth temperature and reacting gas concentrations dominated the formation of ZnO nanorods. PL spectra indicate ZnO nanorods exhibit a strong UV emission at around 386 nm under room temperature. The quality of ZnO nanorod is better than ZnO film due to the absence of the blue and green band emissions. XRD spectra indicate that both ZnO film and ZnO nanorods are preferentially oriented in the c-axis direction. Moreover, epitaxial growth of ZnO films on p-GaN film substrates was demonstrated in this work.
Aspect-ratio enhancement of the as-grown ZnO nanorods is achieved using H2 post- treatment. ZnO nanorods were found to re-deposit in an environment containing H2 and the etching products. Diameter control of the ZnO nanorods is achieved by adjusting the post-treatment conditions. TEM and PL analyses examine that the re-deposited ZnO nanorods possess a single-crystal wurtzite structure with rather good quality. Optical properties of the individual ZnO nanorods with various diameters have been investigated using cathodoluminescence (CL).

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