漏電流大小長久以來一直被視為是衡量介電材料在元件應用其可行性的重要依據。在本論文中，我們以類鑽碳薄膜(Diamond-like Carbon Film，DLC)作為金屬絕緣體半導體(MIS)元件的閘極介電材料。以直流濺鍍系統在較高真空環境下以低濺鍍速率及不同濺鍍偏壓在Si基板上成長DLC薄膜。先以拉曼光譜求樣品之D Peak與G Peak強度面積比例(I(D)/I(G))，再以IV量測儀量得元件的漏電流和分析其可靠度(Reliability)，其結果可用DLC薄膜化學鍵結生成關係和介電層陷阱中心理論說明之，而元件漏電流大小和可靠度優劣與拉曼光譜界定DLC薄膜絕緣能力的趨勢相符。在不同濺鍍偏壓成膜的MIS元件中，以1100V偏壓成膜的樣品其元件的漏電流和可靠度分析表現最佳，當閘極偏壓為2V時，漏電流為6*10-8 A/cm2，而崩潰(Breakdown)電場可達120MV/cm，元件因應力導致的漏電流相當輕微，且在時間相依介電崩潰(TDDB)試驗中存在多次軟性崩潰的現象。

The amount of leakage current has been judged whether the dielectric material was suit for isolated layer of metal-isolator-semiconductor (MIS) or not for a long time. In the thesis, we used diamond-like carbon film (DLC) as the gate dielectric of MIS device. DLC layers were deposited with various bias voltages by the dc magnetron sputtering. We chose low deposition rates and higher vacuum circumstances to get DLC films with higher isolated quality. First, we calculated the ratio of the integrated areas of the Raman D and G peaks (ID/IG), and then measured the leakage current of MIS by IV sourcemeter and analyzed the reliability of each sample. The results could be derived from the change of DLC chemical bonds and the trapping center theory. We found that the performance of the leakage current and reliability of each sample was consistent to the isolated ability of the DLC film, which was judged from the Raman spectrum. The MIS device with its DLC film deposited at 1100 V bias owned the best quality about the leakage current and reliability test: the leakage current at 2 V was about 6*10-8 A/cm2, the breakdown electric field was more than 120 MV/cm, the SILC(stress-induced leakage current) of the device was slight, and there existed many times of soft breakdown phenomenon in TDDB(time-dependent dielectric breakdown) test.

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