本篇論文為透過射頻磁控共濺鍍法沉積鎢參雜氧化銦薄膜，並深入討論不同製程條件下薄膜之光電特性，同時將其延伸應用於光感測器之主動層與薄膜電晶子之通道層，分析並優化元件之光電特性。實驗的第一步分，以射頻磁控共濺鍍沉積法同時濺鍍氧化銦與氧化鎢兩塊靶材，透過調變氧化鎢靶材之濺鍍功率沉積出不同鎢參雜比例之鎢參雜氧化銦薄膜，同時也透過熱退火製程改變其薄膜特性。接著透過結晶結構、元素組成、表面與縱深分析、光電特性等面向進行分析。原子力顯微鏡的結果顯示出薄膜之表面粗糙度方均根值隨著鎢參雜之比例增加有著先上升後下降的趨勢。電子顯微鏡的影像確認堆疊薄膜結構的實際厚度以及介面品質。X射線繞射光譜的結果顯示出不同參雜比例之鎢參雜氧化銦薄膜均為方鐵錳礦之結構，且其結晶度隨著鎢參雜之比例增加而下降，同時熱退火也會提升其結晶度。吸收光譜顯示出不同參雜比例之鎢參雜氧化銦薄膜在可見光與近紅外光之波段透光率均高於80%，顯示出其為優秀之透明導電氧化物。X射線光電子能譜的結果顯示出隨著鎢參雜之比例增加，鎢參雜氧化銦薄膜中之氧空缺隨之減少因此自由載子數目隨之降低。能量色散X射線能譜確認了實際的鎢參雜重量百分比與原子百分比。霍爾效應量測計算出鎢參雜氧化銦薄膜以及氧化銦的載子濃度。最後利用二次離子質譜儀分析出鎢參雜氧化銦薄膜中主要的離子。
實驗的第二部分，將製備之鎢參雜氧化銦薄膜應用於光偵測器，同時以調變射頻磁控共濺鍍氧化鎢靶財之功率、熱退火之氣體種類作為調變製程的參數，討論其對於光偵測器光電特性之影響。隨著鎢參雜之比例增加，光偵測器之光電流與暗電流明顯下降，其原因為鎢與氧之鍵解離能較大因此能有效減少鎢參雜氧化銦薄膜中之氧空缺數量，雖然能夠提升鎢參雜氧化銦薄膜之穩定性同時卻降低自由載子數目。此外當鎢參雜氧化銦薄膜在氧氣環境下進行熱退火，能夠大幅度提升其光暗電流比使整體特性上升，這是由於在熱退火過程通入氧氣能使晶格重新排列同時再次填補鎢參雜氧化銦薄膜中之氧空缺。就結論而言，透過製成優化尋找最佳的光偵測器製程參數，得出當氧化銦靶材濺鍍功率為80瓦與氧化鎢靶材濺鍍功率為5瓦之鎢參雜氧化銦薄膜，且在氧氣環境下熱退火一小時之鎢參雜氧化銦薄膜光偵測器擁有最佳之特性。光暗電流比大於 106，響應值為 160 A/W，響應拒斥比為 4.71×104。實驗的第三部分，製備出以二氧化矽作為閘極絕緣層與鎢參雜氧化銦薄膜作為通道層之薄膜電晶體，同時以調變射頻磁控共濺鍍氧化鎢靶材之功率、鎢參雜氧化銦薄膜之厚度作為調變製程的參數，討論其對於薄膜電晶體光電特性之影響。當鎢參雜氧化銦薄膜通道層參雜入適當比例之鎢原子時，能夠在維持微小且穩定的關電流下提升其開電流，同時也能提升電晶體之開關速度降低次臨界擺幅，其原因為當鎢原子位於鎢參雜氧化銦薄膜晶格中適當位置時能夠額外提供數個自由載子。除此之外改變鎢參雜氧化銦薄膜通道層將會有效的調變電晶體之臨界電壓，透過調整合適的臨界電壓值能使電晶體之功耗降低使其達到省電的效果。就結論而言，透過改變通道層之製程參數尋找最佳光電特性之電晶體，得出當以氧化銦靶材濺鍍功率為80瓦與氧化鎢靶材濺鍍功率為10瓦沉積厚度為10奈米之鎢參雜氧化銦薄膜作為通道層，薄膜電晶體之特性最佳。室溫下得到場效電子遷移率為 11.6 cm2/V∙s，臨界電壓為 0.28 V，次臨界擺幅為 0.21 V/dec，開關電流比為 1.02×107。接著，將薄膜電晶體延伸應用於光電晶體，在閘極偏壓 -2 V的情況下，響應拒斥比為5.82×108。除此之外，嘗試將汲極偏壓由 8 V降低至 0.1 V，響應拒斥比仍保持 2.34×107，再次印證鎢參雜氧化銦薄膜電晶體優異之省電特性。實驗的第四部分，為了簡化製程之複雜度以及提升上電極與通道層的介面品質，製備出以氧化銦薄膜作為上電極與鎢參雜氧化銦薄膜作為通道層之同質結構薄膜電晶體，透過射頻磁控濺鍍同時沉積通道層與上電極能夠減短製程時間，且得力於通道層與上電極之同質結構，電晶體的部分開關特性提升。除此之外，由於氧化銦薄膜在可見光波段具有高透光性，因此電晶體之透明度明顯增加。就結論而言，透過更換上電極之材料提升電晶體之光電特性，得出使用80瓦之氧化銦靶材沉積電晶體之上電極，薄膜電晶體之特性最穩定。室溫下得到場效電子遷移率為 20.07 cm2/V∙s，臨界電壓為 0.89 V，次臨界擺幅為 0.17 V/dec，開關電流比為1.45×106。再一次，將薄膜電晶體延伸應用於光電晶體，在閘極偏壓 -5 V的情況下，響應拒斥比為 5.34×108。

In this thesis, we deposit tungsten-doped indium oxide (InWO) thin-films by RF magnetron co-sputtering method and discuss the optical and electrical properties of the thin-film under different process conditions. At the same time, InWO thin-films will be used as an active layer for UV photodetectors (PDs) and channel layer for thin-film transistors (TFTs). Also, we optimize the optical and electrical properties of InWO thin-films to improve device performance. In the first part of the experiment, we use the RF magnetron co-sputter deposition method co-sputtering two targets indium oxide (In2O3) and tungsten oxide (WO3) simultaneously. By adjusting the sputtering power of the WO3 target, we deposited InWO thin-films with different tungsten doping ratios. InWO thin-film properties are also controlled by the thermal annealing process. Then we analyze InWO thin-films through the crystal structure, elemental composition, surface and depth analysis, optical and electrical characteristics. The results of atomic force microscopy indicate that the root-mean-square value of the surface roughness shows a trend from decline to rise, with an increase in the proportion of tungsten doping ratio. Transmission electron microscope guarantee the real thickness and interface quality of the stacked thin-films structure. The results of the X-ray diffraction spectrum show that the InWO thin-films with different tungsten doping ratios have the rhombohedral structure, and their crystallinity decreases with the increase of the tungsten doping ratios, and thermal annealing also increases their crystallinity. The absorption spectrum shows that InWO thin-films have higher than 80% transmittance in the visible and near-infrared light regions, result in excellent transparent conductive oxides (TCOs) characteristics. The results of X-ray photoelectron spectroscopy show that as the proportion of tungsten doping ratios increases, the oxygen vacancies in the InWO film decrease, and the number of free carriers decreases accordingly. The energy dispersive X-ray spectroscopy confirmed the actual weight percentage and atomic percentage of tungsten doping ratio. Hall effect measurement calculates the carrier concentration of tungsten-doped indium oxide film and indium oxide. Finally, a secondary ion mass spectroscopy is used to analyze the main ions in the InWO thin-films. In the second part of the experiment, we apply InWO thin-films to UV PDs. We set different sputtering power of the WO3 target and various thermal annealing gas ambient as the changing parameters. The influence of the optical and electrical properties of UV PDs was discussed. As the proportion of tungsten doping ratio increases, the photocurrent and dark current of the photodetector decrease significantly. Because of the oxygen bond dissociation energy of tungsten and oxygen is larger, which can effectively reduce the number of oxygen vacancies in the InWO thin-films. Although it can increase the stability of the film, at the same time reduces the number of free carriers. Also, when InWO thin-films are thermally annealed in oxygen ambient, its photo-dark current ratio can be greatly improved. Due to the introduction of oxygen gas during the thermal annealing process can further rearrange the lattice and fufill the oxygen deficiency region. In conclusion, UV PDs with the sputtering power of the In2O3 target 80 Watt and the sputtering power of the WO3 target 5 Watt, then thermal annealing for 1 hour in oxygen ambient has the best performances with ON/OFF current ratio greater than 106, the responsivity of 160 A/W, and UV-to-visible rejection ratio of 4.71×104. Also, the time-dependent switching properties have been demonstrated. In the third part of the experiment, we demonstrate TFTs with silicon dioxide (SiO2) as the gate insulator and InWO thin-films as a channel layer. Again, we adjusting the power of the WO3 target to modulate the tungsten doping ratio of the InWO thin-films and controlling the sputtering time to change channel layer thickness. The influence of the optical and electrical characteristics of TFTs was discussed. When the InWO thin-film at an appropriate tungsten doping ratio, the on-current can be boosted while maintaining a small and stable off current, and the switching speed of the transistor can be improved due to reducing of subthreshold swing. The reason is that when tungsten atoms take place in the lattice of the InWO thin-film properly, creating several additional free carriers. Also, changing channel layer thickness will effectively adjust the threshold voltage of the TFTs. By finding the appropriate threshold voltage value, the power consumption of the TFTs can be reduced. In conclusion, we searched for the best optical and electrical properties of the TFTs. We found that when the sputtering power of the In2O3 target is 80 Watt and the sputtering power of the WO3 target is 10 Watt with 20 nm channel layer, TFTs have the best performance. The result calculated from transfer characteristics exhibit field-effect electron mobility of 11.6 cm2/V ∙ s, the threshold voltage of 0.28 V, the subthreshold swing of 0.21 V/dec, and the ON/OFF current ratio is 1.02 × 107. Also, we extend the application of InWO TFTs to phototransistors. With a gate bias of -2 V, the UV-to-visible rejection ratio gives was 5.82 × 108. Moreover, by reducing the drain bias from 8 V to 0.1 V, the UV-to-visible rejection ratio remains 2.34 × 107, which agrees with the excellent power-saving characteristics of the InWO TFTs. Also, the time-dependent switching properties have been demonstrated. In the fourth part of the experiment, to simplify the fabrication process and improve the interface properties between the top electrode and channel layer, we made InWO TFTs with a homojunction structure by using an indium oxide thin-film as the drain and source electrode. The channel layer and top electrode are simultaneously deposited by RF magnetron sputtering. Due to the homojunction between the channel layer and the top electrode, the switching properties of the transistor are improved. Also, because the In2O3 thin-film has high transmittance in the visible light region, the transparency of the TFTs was significantly enhanced. In conclusion, when using the In2O3 target to deposit the top electrode with 80 Watt, the performance of the homojunction InWO TFTs can be further improved. We found that when the sputtering power of the In2O3 target is 80 Watt for top electrode, TFTs have the best performance. The result calculated from transfer characteristics exhibit field-effect electron mobility of 20.1 cm2/V ∙ s, the threshold voltage of 0.89 V, the subthreshold swing of 0.17 V/dec, and the ON/OFF current ratio is 1.45 × 106. Again, we extend the application of InWO TFTs to phototransistors. With a gate bias of -2 V, the UV-to-visible rejection ratio gives was 5.82 × 108. Also, the time-dependent switching properties have been demonstrated.

Chapter 1
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Chapter 6
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