本研究利用流體引導之反溶劑蒸氣輔助結晶法(FGAVC)法製作出結晶性更好、更具方向性的三碘化甲胺鉛(CH3NH3PbI3)微米線，研究微米線的材料與光電特性，並且應用於光感測元件上。
運用原子力顯微鏡、掃描式電子顯微鏡、導電式原子力顯微鏡、掃描式凱爾文探針顯微鏡、X光繞射儀分析以及光致螢光光譜等儀器分析CH3NH3PbI3微米線，探討微米線的材料與光電特性。由材料分析可得知，利用FGAVC法能使CH3NH3PbI3結晶自組裝成微米線且具有方向性，而CH3NH3I:PbI2莫爾比例1.5:1為微米線的最佳製程參數。由光電特性分析，單根CH3NH3PbI3微米線在照光下的電流電壓曲線呈現電阻式記憶體的電特性。
進一步將CH3NH3PbI3微米線應用在光感測器上，我們製作了兩種元件結構，分別是光導體元件與電晶體，光導體元件中我們量測不同波長雷射光照射下的電性，得知藍光照射時，元件有最大光響應，而紅、綠光照射時，元件光響應較小；使用CH3NH3PbI3微米線搭配十三烷基駢苯衍生物(PTCDI-C13)當主動層，製作成小電壓驅動有機電晶體，研究其光感應特性，結果顯示導入CH3NH3PbI3微米線，可使有機電晶體具有分辨不同色光的能力。
本研究解析CH3NH3PbI3微米線的材料及光電特性，成功利用微米線製作出光偵測器，其中藍光照射下元件光響應度可達15 mA/W。

In this study, we investigated the structural and electrical properties of CH3NH3PbI3 microwires prepared by fluid-guided anti-solvent vapor-assisted crystallization; their application in photosensors was also evaluated. The CH3NH3PbI3 microwires were characterized by atomic force microscopy (AFM), scanning electron microscopy, and conductive AFM. CH3NH3PbI3 self-assembled into microwires with directional crystallization, and a single microwire showed memristor-like behavior under light illumination. The electrical properties of CH3NH3PbI3 microwire-based photoconductors were then investigated under laser illumination with various wavelengths. Under blue light illumination, the photoconductors exhibited a photo-responsivity of 15 mA/W; under red and green light illumination, however, a photo-responsivity of only 2 mA/W was obtained. Finally, we studied the photoresponse properties of CH3NH3PbI3 microwire/N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) composite-based thin-film transistors (TFTs). A top layer of PTCDI-C13 was thermally deposited onto the CH3NH3PbI3 microwires to form the active layer of TFTs, and results showed that the composite-based TFTs could distinguish different colors of light.

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