本實驗以離子束濺鍍系統成長Co：ITO之稀磁性半導體，並且加入MgO緩衝層改變樣品內部的結構，藉此得到結構缺陷或者是電性表現與磁性的相依性。實驗結果發現，加入MgO緩衝層的Co：ITO薄膜結構轉為以多晶的型態存在，相較於沒有MgO緩衝層的非晶樣品，在電性及光學性質上都有較優良的表現。對應其鐵磁性行為的結果發現，電性與磁性之間的趨勢並不符合自由載子引致之磁性來源，反而與缺陷所提供之束縛及化子模型關係較為一致，因此本系統之Co：ITO薄膜磁性來源應為缺陷所提供之束縛極化子所引致。

In this thesis, Co:ITO diluted magnetic semiconductor (DMS) is fabricated by ion beam sputter (IBS) system, and MgO is utilized as a buffer layer to improve the crystal structure. By changing the structure of Co:ITO thin films to observe the relation between defects / electrical properties and magnetism. From the analysis of experimental result, the samples with MgO buffer layer are polycrystalline and have batter electrical or optical properties compared to that without MgO buffer layer. The trend of electrical properties correspond to the trend of magnetic properties is not insistent with “Itinerant Ferromagnetism” model, however, the trend of defect and magnetism is more correlated with “Bound Magnetron polaron” model. It confirms that the origin of magnetism in Co:ITO system is owing to the bound polaron induced by defect.

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