在本研究中，以掃描式探針顯微鏡技術探討在奈米尺度下多晶鐵電薄膜之電域長成的動態現象。樣品為有機金屬鹽裂解法製備之鋯鈦酸鉛 (Pb(Zr0.52Ti0.48)O3, PZT) 鐵電性薄膜。在此形變相界附近的PZT薄膜中可見外加電壓下產生極高比例的90o電域反轉。當電域在作用場下的晶粒擴散時，域壁呈現出緩慢爬行的動態行為，即過程中存在許多穩定可觀察的中間狀態。此時電域擴散成長的現象符合Kolmogorov - Avrami - Ishibashi (KAI) model，晶界上的缺陷可成為域壁擴散的阻礙。電域擴散至晶界外的現象中顯示，晶界上的缺陷會造成電域集體反轉，遠離KAI模型預測，降低於多晶薄膜中書寫固定尺寸電域的擴散穩定性。電域成長現象中發現，延伸方向會朝缺陷越多的晶粒反轉，也就是說晶粒越小，其相對的缺陷也越大和越不穩定，越容易受到反向電場作用而反轉。動態的電域成長過程中，晶軸扭轉方向會有90°和180°的中間穩定態而，其極化方向在反向場作用下最後狀態都會形成180°反轉的穩定態。

We report the results of nanoscale domain wall motion and switching dynamics on polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thin films during ferroelectric polarizing processes, which were investigated by scanning probe microscopy (SPM). PZT (Pb(ZrTi)O3) thin films were synthesized by metal-organic decomposition. Relatively high percentage of 90o domain switching was found under external fields in the PZT films near morphotropic phase boundary. When the domain wall propagated inside the voltage-written grain, it followed the creep motion and stable intermediate domain states could be obtained. Switching mechanisms had been fitted well with the Kolmogorov-Avrami-Ishibashi (KAI) model within single grain. The dipole defects and the grain boundary might act as the pinning sites. The results also suggested that the defects at grain boundaries will enhance the ferroelastic switching and decrease the stability of written domains in polycrystalline films. During the process of domain growth, the polarization reversing will have 90° or 180° switching metable states and finally all reaches 180 ° switching states.

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