本論文的研究內容包含三個部分(1)探討具不同含量FA摻雜FAxMA1-xPbI3主動層之鈣鈦礦太陽能電池特性分析、(2)探討具不同厚度氧化釩(VOx)界面修飾層之鈣鈦礦太陽能電池特性分析及(3)探討具微量IBA摻雜PEDOT:PSS電洞傳輸層之鈣鈦礦太陽能電池特性分析。
第一部分利用較大離子半徑的FA陽離子(CH(NH2)2+)取代較小離子半徑的MA陽離子(CH3NH3+)，製作FAxMA1-xPbI3(x=0、0.2、0.3及0.4)鈣鈦礦薄膜，以減緩鈣鈦礦的結晶速率，提升鈣鈦礦的薄膜品質，隨著離子半徑較大的FA取代較小的MA陽離子，會造成鈣鈦礦的晶格擴展，使能帶寬度變窄，而造成吸收頻譜紅移，當FA0.3MA0.7PbI3時具有最佳的結晶特性，使電子電洞對復合減少及載流子擴散長度改善，讓主動層產生更多激子，提升短路電流密度，進而提升元件轉換效率。由實驗結果發現當FA0.3MA0.7PbI3時鈣鈦礦太陽能電池為最佳條件，其開路電壓由0.79 V提升至0.81 V，短路電流密度由19.32 mA/cm2上升到22.83 mA/cm2，填充因子由61.44%提升至62.78%，以及光電轉換效率由9.37%大幅提升至11.61%。
第二部分利用磁控式射頻濺鍍系統製備氧化釩薄膜，作為ITO電極與PEDOT:PSS電洞傳輸層之間的界面修飾層，本研究探討不同氧化釩界面修飾層厚度(10、20、30及40 nm)對於元件特性之影響， 由於增加VOx界面修飾層後，除了HOMO能階與ITO電極的功函數更為匹配，且有效擔任電子阻擋層，以減少漏電流產生，進而增加開路電壓；另外由於接觸角量測及換算薄膜表面能的結果顯示氧化釩界面修飾層能使PEDOT:PSS薄膜的表面能由46.17mJ/m2提升至47.74 mJ/m2，因此使鈣鈦礦溶液塗佈時有更好的附著度及電性接觸，伴隨改善載子在界面的注入，提升結晶度，進而提升元件特性。由元件的量測結果顯示，當氧化釩界面修飾層厚度為20 nm時，FA0.3MA0.7PbI3鈣鈦礦太陽能電池有最佳特性，其並聯電阻最高，串聯電阻最低，開路電壓由0.81 V上升至0.83 V，短路電流密度由22.83 mA/cm2增加至23.49 mA/cm2，填充因子由62.78%增加至71.43%，以及光電轉換效率由11.61%大幅上升至13.92%。
第三部分將0.05 mL、0.10 mL及0.15 mL的IBA摻雜於1 mL的PEDOT:PSS溶液中，以製作具5%、10%及15%IBA摻雜之PEDOT:PSS:IBA薄膜作為鈣鈦礦太陽能電池的電洞傳輸層，探討不同IBA摻雜量對PEDOT:PSS:IBA薄膜特性影響及對鈣鈦礦太陽能電池特性之影響。由光電子能譜儀的量測結果顯示，將IBA摻雜於PEDOT:PSS:IBA薄膜中，其HOMO能階從5.20 eV增加到5.40 eV，而當n型材料LUMO與p型材料HOMO差值越大時有助於開路電壓提升，且利用接觸角量測及表面能換算之結果顯示，將IBA摻雜於PEDOT:PSS:IBA薄膜有助於提升其表面能，因此鈣鈦礦溶液塗佈時有更好的附著度且結晶度獲得提升，有助於主動層產生的電洞能有效的被外部電路萃取，使得元件有較佳穩定性及性能。由元件的量測結果顯示，當摻雜10%IBA於PEDOT:PSS:IBA薄膜作為鈣鈦礦太陽能電池的電洞傳輸層時具有最佳化，其開路電壓由0.83 V提升至0.85 V，短路電流密度由23.49 mA/cm2上升到23.90 mA/cm2，填充因子由71.43%提升至72.31%，以及光電轉換效率由13.92%大幅提升至14.68%。

In the first part,various FA contents were doped into the FAxMA1-xPbI3 (x=0.1, 0.2, 0.3, and 0.4)perovskite active layer. Since the ionic radius of the FA cation was large, the crystal lattice of the perovskite could be enlarged, the bandgap width narrows, the absorption spectrum has a red-shift, the structural defects and stability could be improved.The power conversion efficiency of the perovskite solar cells using FA0.3MA0.7PbI3 as active layer increased from 9.37% to 11.61%. In the second part, this study used vanadium oxide(VOx) thickness 10, 20, 30 and 40 nm as an interface modification layer (IML).The VOx IML could make a more match energy level between the work function of ITO anode electrode and the highest occupied molecular orbital (HOMO) of PEDOT:PSS hole transport layer (HTL), and increase the surface energy of the PEDOT:PSS film. The power conversion efficiency of the perovskite solar cell using VOx thickness 20nm as the IML increased from 11.61% to 13.92%. In the last part, the isobutanol (IBA) with various ratios of 5%, 10%, and 15% was doped into PEDOT:PSS films as the HTL of perovskite solar cells. The PEDOT:PSS:IBA films with IBA-doped could increase the HOMO energy level and surface energy.The power conversion efficiency the perovskite solar cells using 10% IBA-doped PEDOT:PSS HTL increased from 13.92% to 14.68%.

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