在本論文中，我們以有機金屬化學氣相沉積法成長及研製磷化銦鎵/砷化鋁鎵/砷化鎵擬晶性高電子移動率電晶體。由於許多研究指出高溫及高能量的物理真空鍍膜技術容易對基材表面造成熱破壞，使得費米能階幾乎釘在某一定值，蕭特基能障高度也相對較低，且無法隨著改變不同金屬功函數而有所變動。
為了改善費米能階釘住效應對元件影響，於本論文中使用電泳沉積法沉積金屬閘極，以獲得良好的蕭特基接面。 為了比較電泳沉積法與傳統熱蒸鍍之元件特性，我們分別對兩種方法所製作的元件做各種分析及測試，包含表面粗糙度、金屬粒徑大小及直流與微波量測等。
最後將電泳元件應用於氫氣感測上，其元件展現良好的直流特性及高氫氣感測靈敏度，可開發為高性能氫氣感測元件。但其元件特性易受溫度所影響，是電泳技術需改進之處。

In this thesis, InGaP/AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs), grown by metal organic chemical vapor deposition (MOCVD), are fabricated and investigated. Due to the thermal damage of physical vacuum deposition, the Fermi-level is almost pinned at constant value instead of different metal work function. This results in a lower Schottky barrier height of the studied devices.In order to discard Fermi-lever pinning effect, the electrophoretic deposition (EPD) technology is employed to deposit metal gate to obtain well-behaved Schottky contact interface. In order to compare the characteristics of the studied devices with electrophoretic deposition (EPD) and thermal evaporation (TE), some tests and analysis to the devices are demonstrated, including surface roughness analysis, grain size, and measurements of DC and microwave.
Finally, the EPD device was serve to be a hydrogen sensor. It also shows good DC performance and high hydrogen sensing performance. However, the EPD device exhibits stronger temperature-dependence and inferior microwave performance than the TE device.

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