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研究生：	邱世彬 Chiu, Shih-bin
論文名稱：	散熱鰭片之電磁特性與接地構型之分析 Analysis of the Electromagnetic Characteristics and Grounding Configuration of Pin-Fin Heatsinks
指導教授：	周榮華 Chou, Jung-hua
學位類別：	博士 Doctor
系所名稱：	工學院 - 工程科學系 Department of Engineering Science
論文出版年：	2009
畢業學年度：	97
語文別：	中文
論文頁數：	178
中文關鍵詞：	散熱鰭片、電磁輻射、電磁訊號源、接地構型
外文關鍵詞：	heatsink, EM emissions, EM excitation source, grounding configuration
相關次數：	點閱：119 下載：2
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隨著高速電路的演進及CPU時脈頻率的提升，散熱模組的使用已不可或缺，然而在散熱問題考量下，卻衍生出鰭片、熱管及冷卻管路等類天線外型結構之電磁相容性(EMC)問題。本文以全波馬克斯威爾方程式為統御方程式，利用時域有限差分法(FDTD)搭配完美匹配層(PML)之邊界條件，以三類型電磁訊號源在不同操作頻率下探討針狀散熱鰭片之電磁共振行為，並採用金屬周界接地模式，以探究此法對改善鰭片電磁共振之適用性。
就訊號源影響而言，Modulated Gaussian Pulse誘發鰭片共振發生於特定頻率，共振點能量集中；Differentiated Gaussian Pulse除了共振點能量集中外，並隨著操作頻率提升至4GHz時，鰭片共振會呈現分群效應，另一現象為電磁能量匱乏區之產生，此區會隨著操作頻率增加而平移；Smooth Compact Pulse則具有均勻能量分佈於頻帶之特徵，當操作頻率提升至8或10GHz時，共振點數量增加且往高頻區段移動，共振能量呈現均佈型態。
針對鰭片結構分析，sink6x6鰭片為最早反應訊號源影響之結構，block鰭片則在高頻時具有明顯之耦合行為，配合時域態的電場分佈圖，可知鰭針分佈處為電場集中點。sink3x3鰭片則可抑制Z方向電場之作用。就鰭片吸收與輻射型態下能量觀點比較，鰭片的吸收能力較輻射能力高，其強度差值約為2個order。
對於接地構型，採用金屬周界接地模式，對於訊號源所誘發之鰭片共振，可將高頻區段之共振點抑制到2-10GHz頻段。針對sink6x6鰭片採用不同接地構型，若搭配四周接地模式，可藉由共振腔之特性改變共振頻率點，且於操作頻率在1GHz時，可降低共振量值約1.4倍；而嵌入接地模式可將輻射型態共振點頻率抑制達8GHz，而改善效益最高為開縫接地構型，兼具降低共振強度與偏移共振點之優勢，於操作頻率1GHz時，可降低共振幅度約4倍，另一特色為可使共振點突波分佈的特性趨於平緩，且對於抑制高頻共振顯現其能力。

With the evolution of high speed circuits and higher CPU clock frequency, cooling modules are necessary for electronic systems. However, the configurations of the cooling modules such as heatsinks, heatpipes, may induce EMC problems. In this study, the electromagnetic effect of pin-fin heatsinks is investigated by solving Maxwell equations numerically using a FDTD method and PML boundary conditions. Three types of excitation sources with different operating frequencies are explored. For suppressing the EM effects of fins, grounding methods by using metal slabs are also examined.
For the effect of excitation sources, resonant behaviors triggered by Modulated Gaussian Pulse occur at specific frequencies. For Differentiated Gaussian Pulse, the distribution of resonant points shows cluster phenomena due to the peaks of the source when the reference operating frequency is increased to 4GHz. Also, an EM empty bandwidth exists which shifts with the operating frequency. For the Smooth Compact Pulse excitation source, quite a few multiple resonant frequencies are observed at higher operating frequencies.
Among the heatsinks, the 6x6 pin-fin heatsink is most liable to EM energy to induce EM resonance. Using a metal block as a heatsink at higher operating frequencies should be avoided as it may induce undesirable EM effects.The 3x3 pin-fin heatsink can suppress the Z-direction electric field. No matter what the excitation source is, the absorption magnitudes of the fins are much larger than those due to radiation.
For grounding methods with metal slabs, the scheme is effective in suppressing emissions at higher frequencies. Different grounding configurations for the 6x6 pin-fin heatsink show that the EM resonant magnitude can be reduced by 1.4 times at 1GHz operating frequency. The resonant points can be changed by the fin cavity characteristics by using surrounded grounding method. As for the embedded grounding model, the scheme can suppress emissions up to 8GHz. For the slit grounding model, the adverse EM effect can be decreased by 4 times at low operating frequency. Additionally, this grounding configuration can make the resonant pulse more smoothly and suppress the high frequency resonance more effectively.

目錄	I
表目錄	IV
圖目錄	V
符號說明	XI 
第一章、序論	...1
1-1 研究背景及動機	1
1-2 電磁干擾(EMI-Electromagnetic Interference)及控制	5
第二章、文獻回顧	10
第三章、電磁場數值分析	21
3-1 馬克斯威爾方程式(Maxwell’s Equations)	22
3-2 時域有限差分法(FDTD Method)	24
3-3 準確性與穩定性	26
3-4 吸收邊界條件之選擇	27
3-5 數值分析模型	31
3-5-1 散熱鰭片與電子元件模型	31
3-5-2 數值分析網格	32
3-5-3 電磁訊號源	33
3-5-4 接地條件的設定	35
第四章、電磁訊號源與操作頻率之探討	36
4-1鰭片吸收電磁波型態之頻譜分析	37
  4-1-1 訊號源於操作頻率800MHz之電磁效應	37
4-1-2 訊號源於操作頻率1GHz之電磁效應	39
4-1-3 訊號源於操作頻率2GHz之電磁效應	40
4-1-4 訊號源於操作頻率4GHz之電磁效應	42
4-1-5 訊號源於操作頻率6GHz之電磁效應	44
4-1-6 訊號源於操作頻率8GHz之電磁效應	46
4-1-7 訊號源於操作頻率10GHz之電磁效應	48
4-1-8 綜合討論	50
4-2鰭片輻射電磁波型態之頻譜分析	53
4-2-1 訊號源於操作頻率0.8及1GHz之電磁效應	53
4-2-2 訊號源於操作頻率2GHz之電磁效應	55
4-2-3 訊號源於操作頻率4GHz之電磁效應	57
4-2-4 訊號源於操作頻率6GHz之電磁效應	58
4-2-5 訊號源於操作頻率8及10GHz之電磁效應	59
4-2-6 綜合討論	61
第五章、接地構型之探討	65
5-1 Ez1-Modulated Gaussian Pulse-鰭片接地構型之分析	66
5-1-1 鰭片吸收型態之接地效應	66
5-1-2 鰭片輻射型態之接地效應	67
5-2 Ez3-Smooth Compact Pulse-鰭片接地構型之分析	69
5-2-1 鰭片吸收型態之接地效應	69
5-2-2 鰭片輻射型態之接地效應	71
5-3 Heatsink6x6鰭片---接地構型差異之分析	73
5-3-1 Sink6x6鰭片吸收型態之接地構型比較	73
5-3-2 Sink6x6鰭片輻射型態之接地構型比較	76
第六章、結論與建議	78
6-1 總結	78
6-2 建議	81
參考文獻	82
附錄	88






 
表 目 錄

表一、鰭片的尺寸規格	98
表二、訊號源Ez1-Modulated Gaussian Pulse--鰭片吸收型態Ez共振點分佈表	99
表三、訊號源Ez2-Differentiated Gaussian Pulse--鰭片吸收型態Ez共振點分佈表	100
表四、訊號源Ez3-Smooth Compact Pulse--鰭片吸收型態Ez共振點分佈表	101
表五、訊號源Ez1-Modulated Gaussian Pulse--鰭片輻射型態Ez共振點分佈表	103
表六、訊號源Ez2-Differentiated Gaussian Pulse--鰭片輻射型態Ez共振點分佈表	105
表七、訊號源Ez3-Smooth Compact Pulse--鰭片輻射型態Ez共振點分佈表	106




 
圖 目 錄

圖1-1 鰭片面積示意圖[5]	107
圖1-2 各式鰭片結構圖[6]	107
圖3-1  Yee單位晶格的網格位置圖[66]	108
圖3-2  Yee單位晶格網格位置的有限差分表示圖[69]	108
圖3-3  Yee演算法之單位時間間格示意圖[68]	109
圖3-4 二維PML之應用架構[77]	109
圖3-5 三維PML之應用架構[78]	110
圖3-6 散熱鰭片(Heatsink 6x6)及IC Package幾何示意圖	110
圖3-7 電子元件與散熱鰭片尺度示意圖	111
圖3-8 數值分析之網格分佈圖	111
圖3-9-a 訊號源Ez1操作頻率0.8GHz之時域與頻率域圖	112
圖3-9-b 訊號源Ez1操作頻率1GHz之時域與頻率域圖	113
圖3-9-c 訊號源Ez1操作頻率2GHz之時域與頻率域圖	114
圖3-9-d 訊號源Ez1操作頻率4GHz之時域與頻率域圖	115
圖3-9-e 訊號源Ez1操作頻率6GHz之時域與頻率域圖	116
圖3-9-f 訊號源Ez1操作頻率8GHz之時域與頻率域圖	117
圖3-9-g 訊號源Ez1操作頻率10GHz之時域與頻率域圖	118
圖3-10-a 訊號源Ez2操作頻率0.8GHz之時域與頻率域圖	119
圖3-10-b 訊號源Ez2操作頻率1GHz之時域與頻率域圖	120
圖3-10-c 訊號源Ez2操作頻率2GHz之時域與頻率域圖	121
圖3-10-d 訊號源Ez2操作頻率4GHz之時域與頻率域圖	122
圖3-10-e 訊號源Ez2操作頻率6GHz之時域與頻率域圖	123
圖3-10-f 訊號源Ez2操作頻率8GHz之時域與頻率域圖	124
圖3-10-g 訊號源Ez2操作頻率10GHz之時域與頻率域圖	125
圖3-11-a 訊號源Ez3操作頻率0.8GHz之時域與頻率域圖	126
圖3-11-b 訊號源Ez3操作頻率1GHz之時域與頻率域圖	127
圖3-11-c 訊號源Ez3操作頻率2GHz之時域與頻率域圖	128
圖3-11-d 訊號源Ez3操作頻率4GHz之時域與頻率域圖	129
圖3-11-e 訊號源Ez3操作頻率6GHz之時域與頻率域圖	130
圖3-11-f 訊號源Ez3操作頻率8GHz之時域與頻率域圖	131
圖3-11-g 訊號源Ez3操作頻率10GHz之時域與頻率域圖	132
圖4-1 訊號源Ez1頻率為0.8GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	133
圖4-2 訊號源Ez2頻率為0.8GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	133
圖4-3 訊號源Ez3頻率為0.8GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	134
圖4-4 訊號源Ez1頻率為1GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	134
圖4-5 訊號源Ez2頻率為1GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	135
圖4-6 訊號源Ez3頻率為1GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	135
圖4-7 訊號源Ez1頻率為2GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	136
圖4-8 訊號源Ez2頻率為2GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	136
圖4-9 訊號源Ez3頻率為2GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	137
圖4-10 訊號源Ez1頻率為4GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	137
圖4-11 訊號源Ez2頻率為4GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	138
圖4-12 訊號源Ez3頻率為4GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	138
圖4-13 訊號源Ez1頻率為6GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	139
圖4-14 訊號源Ez2頻率為6GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	139
圖4-15 訊號源Ez3頻率為6GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	140
圖4-16 訊號源Ez1頻率為8GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	140
圖4-17 訊號源Ez2頻率為8GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	141
圖4-18 訊號源Ez3頻率為8GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	141
圖4-19 訊號源Ez1頻率為10GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	142
圖4-20 訊號源Ez2頻率為10GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	142
圖4-21 訊號源Ez3頻率為10GHz，鰭片吸收型態Ez訊號正規化頻譜分析圖	143
圖4-22 訊號源Ez1頻率為4GHz，鰭片吸收型態Ey訊號正規化頻譜分析圖	143
圖4-23 訊號源Ez2頻率為4GHz，鰭片吸收型態Ey訊號正規化頻譜分析圖	144
圖4-24 訊號源Ez3頻率為4GHz，鰭片吸收型態Ey訊號正規化頻譜分析圖	144
圖4-25 訊號源Ez1頻率為10GHz，鰭片吸收型態Ey訊號正規化頻譜分析圖	145
圖4-26 訊號源Ez2頻率為10GHz，鰭片吸收型態Ey訊號正規化頻譜分析圖	145
圖4-27 訊號源Ez3頻率為10GHz，鰭片吸收型態Ey訊號正規化頻譜分析圖	146
圖4-28  Ez1操作頻率2G時，block鰭片之電磁波形分佈圖-absorption	146
圖4-29  Ez1操作頻率4G時，sink6x6鰭片之電磁波形分佈圖-absorption	147
圖4-30  Ez2操作頻率4G時，sink6x6鰭片之電磁波形分佈圖-absorption	147
圖4-31  Ez3操作頻率4G時，sink6x6鰭片之電磁波形分佈圖-absorption	148
圖4-32  Ez1操作頻率10G時，sink6x6鰭片之電磁波形分佈圖-absorption	148
圖4-33  Ez2操作頻率10G時，sink6x6鰭片之電磁波形分佈圖-absorption	149
圖4-34  Ez3操作頻率10G時，sink6x6鰭片之電磁波形分佈圖-absorption	149
圖4-35  Ez3操作頻率10G時，block鰭片之電磁波形分佈圖-absorption	150
圖4-36 訊號源Ez1頻率為0.8GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	150
圖4-37 訊號源Ez2頻率為0.8GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	151
圖4-38 訊號源Ez3頻率為0.8GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	151
圖4-39 訊號源Ez1頻率為1GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	152
圖4-40 訊號源Ez2頻率為1GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	152
圖4-41 訊號源Ez3頻率為1GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	153
圖4-42 訊號源Ez1頻率為2GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	153
圖4-43 訊號源Ez2頻率為2GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	154
圖4-44 訊號源Ez3頻率為2GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	154
圖4-45 訊號源Ez1頻率為4GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	155
圖4-46 訊號源Ez2頻率為4GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	155
圖4-47 訊號源Ez3頻率為4GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	156
圖4-48 訊號源Ez1頻率為6GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	156
圖4-49 訊號源Ez2頻率為6GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	157
圖4-50 訊號源Ez3頻率為6GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	157
圖4-51 訊號源Ez1頻率為8GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	158
圖4-52 訊號源Ez2頻率為8GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	158
圖4-53 訊號源Ez3頻率為8GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	159
圖4-54 訊號源Ez1頻率為10GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	159
圖4-55 訊號源Ez2頻率為10GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	160
圖4-56 訊號源Ez3頻率為10GHz，鰭片輻射型態Ez訊號正規化頻譜分析圖	160
圖4-57  Ez1操作頻率2G時，block鰭片之電磁波形分佈圖-radiation	161
圖4-58  Ez1操作頻率4G時，sink6x6鰭片之電磁波形分佈圖- radiation	161
圖4-59  Ez2操作頻率4G時，sink6x6鰭片之電磁波形分佈圖- radiation	162
圖4-60  Ez3操作頻率4G時，sink6x6鰭片之電磁波形分佈圖- radiation	162
圖4-61  Ez1操作頻率10G時，sink4x4鰭片之電磁波形分佈圖- radiation	163
圖4-62  Ez2操作頻率10G時，sink4x4鰭片之電磁波形分佈圖- radiation	163
圖4-63  Ez1操作頻率10G時，sink6x6鰭片之電磁波形分佈圖- radiation	164
圖4-64  Ez2操作頻率10G時，sink6x6鰭片之電磁波形分佈圖- radiation	164
圖4-65  Ez3操作頻率10G時，sink6x6鰭片之電磁波形分佈圖- radiation	165
圖4-66  Ez3操作頻率10G時，block鰭片之電磁波形分佈圖- radiation	165
圖5-1 訊號源Ez1頻率為1GHz，sink6x6鰭片吸收型態--接地頻譜分析圖	166
圖5-2 訊號源Ez1頻率為4GHz，block鰭片吸收型態--接地頻譜分析圖	166
圖5-3 訊號源Ez1頻率為4GHz，sink6x6鰭片吸收型態--接地頻譜分析圖	167
圖5-4 訊號源Ez1頻率為10GHz，block鰭片吸收型態--接地頻譜分析圖	167
圖5-5 訊號源Ez1頻率為10GHz，sink4x4鰭片吸收型態--接地頻譜分析圖	168
圖5-6 訊號源Ez1頻率為4GHz，block鰭片輻射型態--接地頻譜分析圖	168
圖5-7 訊號源Ez1頻率為4GHz，sink4x4鰭片輻射型態--接地頻譜分析圖	169
圖5-8 訊號源Ez1頻率為4GHz，sink6x6鰭片輻射型態--接地頻譜分析圖	169
圖5-9 訊號源Ez1頻率為10GHz，sink6x6鰭片輻射型態--接地頻譜分析圖	170
圖5-10 訊號源Ez3頻率為1GHz，sink6x6鰭片吸收型態--接地頻譜分析圖	170
圖5-11 訊號源Ez3頻率為4GHz，block鰭片吸收型態--接地頻譜分析圖	171
圖5-12 訊號源Ez3頻率為4GHz，sink4x4鰭片吸收型態--接地頻譜分析圖	171
圖5-13 訊號源Ez3頻率為4GHz，sink6x6鰭片吸收型態--接地頻譜分析圖	172
圖5-14 訊號源Ez3頻率為10GHz，block鰭片吸收型態--接地頻譜分析圖	172
圖5-15 訊號源Ez3頻率為10GHz，sink4x4鰭片吸收型態--接地頻譜分析圖	173
圖5-16 訊號源Ez3頻率為10GHz，sink6x6鰭片吸收型態--接地頻譜分析圖	173
圖5-17 訊號源Ez3頻率為6GHz，sink6x6鰭片輻射型態--接地頻譜分析圖	174
圖5-18 訊號源Ez3頻率為10GHz，block鰭片輻射型態--接地頻譜分析圖	174
圖5-19 訊號源Ez3頻率為10GHz，sink4x4鰭片輻射型態--接地頻譜分析圖	175
圖5-20 訊號源Ez3頻率為10GHz，sink6x6鰭片輻射型態--接地頻譜分析圖	175
圖5-21 訊號源Ez3頻率為1GHz，sink6x6鰭片吸收型態--接地構型比較圖	176
圖5-22 訊號源Ez3頻率為4GHz，sink6x6鰭片吸收型態--接地構型比較圖	176
圖5-23 訊號源Ez3頻率為10GHz，sink6x6鰭片吸收型態--接地構型比較圖	177
圖5-24 訊號源Ez3頻率為1GHz，sink6x6鰭片輻射型態--接地構型比較圖	177
圖5-25 訊號源Ez3頻率為4GHz，sink6x6鰭片輻射型態--接地構型比較圖	178
圖5-26 訊號源Ez3頻率為10GHz，sink6x6鰭片輻射型態--接地構型比較圖	178
                                    

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