本研究主要是利用溶膠-凝膠法合成氧化鋅以及摻雜之氧化鋅薄膜，並對其結晶機制與光電特性進行解析。針對未摻雜的氧化鋅薄膜系統，將未結晶化的氧化鋅試片置於氧氣氛中，不同的結晶溫度（600 ºC, 650 ºC 和 700 ºC）下進行熱處理，研究熱結晶溫度對氧化鋅結構與光電特性之影響。結果顯示，在氧化鋅晶體表面以及晶體邊界上成長出氧化鋅奈米線。由氧化鋅晶體分解擴散的鋅離子與通入的氧氣再結合是氧化鋅奈米線成長的主要原因，而根據熱擴散機制與質量守恆定律，氧化鋅奈米線的成長將會造成氧化鋅薄膜體積的耗損。此外，將氧化鋅奈米線薄膜製作成金屬/半導體/金屬（M/S/M）的光檢測器應用研究上，以高功函數的金屬銥（Ir）做為電極。發現在650 ºC結晶溫度下所合成的氧化鋅奈米線薄膜具有最佳的結晶度與發冷光特性，且因具有氧化鋅奈米線的效應則有助於提升光檢測器之效能。
另一項研究主題是合成不同濃度的銦(In)與錫（Sn）摻雜於氧化鋅薄膜，探討金屬摻雜物對於薄膜的結晶性與光電特性的貢獻。實驗結果顯示，無論是銦或錫的摻雜都會造成薄膜結晶性的劣化，但有助於修復薄膜表面的結構缺陷。在薄膜的光穿透率與電導率方面，銦的摻雜有助於提升氧化鋅薄膜的電導率，無法有效提升薄膜的光穿透率。相反的，氧化鋅摻錫的薄膜擁有很高的薄膜光穿透率，在提升薄膜電導率的表現卻不佳。簡言之，摻雜單一金屬元素無法同時提升氧化鋅薄膜的光穿透率以及電導率。
有鑑於此，本研究另以溶膠-凝膠法合成氧化鋅（ZnO）與氧化銦錫（ITO）的水溶液，再依不同比例混合（1:1, 2:1 和 9:1）製作出複合的氧化銦錫鋅（ZITO）透明導電薄膜，解析ITO濃度以及結晶溫度對ZITO薄膜特性的影響。ZITO薄膜的結晶度與光穿透率主要是受到ITO濃度（銦＋錫的摻雜）的影響，在適當的結晶溫度下（650 ºC），Z9ITO（ZnO : ITO = 9 : 1）薄膜不僅有較高的薄膜電導率，同時具較佳的薄膜光穿透率，可證實ZITO薄膜的光電特性主要是由低銦錫摻雜濃度主導。

Un-doped ZnO and doped-ZnO thin films were prepared on the silica glass by sol-gel method. The un-crystallized ZnO samples were crystallized at various crystallized temperatures (600 ºC, 650 ºC and 700 ºC) for 1 hour on a pure oxygen atmosphere to understand the effects of thermal energy on crystallization and optical properties. Due to the diffused zinc atoms recombining with oxygen atoms, the ZnO nanowires grew continually from the ZnO grains or the ZnO grain boundaries. According to the thermal diffusion mechanism and the law of conservation of mass, the bottom film of ZnO decreased but ZnO nanowires had grown. In addition, the UV photodetector (iridium/ZnO/iridium) was constructed on the ZnO nanowires thin films with high work function Ir electrodes. From photoluminescence (PL) and I-V measurement, the 650 ºC ZnO nanowires thin film not only possessed better crystallization, but also had the efficacy of nanowires to enhance the optical characteristics that revealed an excellent characteristic of UV photodetector.
Indium-doped ZnO (IZO) and tin-doped ZnO (SZO) thin films were synthesized by sol-gel method. The different dopants concentrations (0~9 at.%) were doped into ZnO films to understand the contributions of doping mechanism on structural characteristics, optical and electrical properties. Regardless of In or Sn dopants, the crystalline quality of films was deteriorated but the structural defects of film surface could be repaired. For IZO films, the In doping could improved the conductivity of ZnO films, but the optical transmittance was not enhanced completely. Contrarily, the SZO films possessed an excellent optical transmittance and the performance for decreasing conductivity was not clear. Briefly, the electrical conductivity and optical transmittance of ZnO film could not be improved by alone dopants doping.
The multi-compound ZITO transparent conductive oxide (TCO) thin films were synthesized by ZnO solution mixed with ITO solution. The ZITO thin films with various volume ratios of ZnO to ITO (1:1, 2:1 and 9:1) were crystallized at different temperatures (600~700 ºC). The results showed that the crystalline characteristics and optical transmittance were mainly dependent on ITO content and crystallization. Notably, the 650 ºC Z9ITO film not only had better conductivity but also possessed excellent optical transmittance. Also, the ZITO films were subject to the effects of low indium and tin dopants concentration and this improved the related characteristics of ZnO films.

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