在本論文中，我們利用有機金屬化學汽相沈積法及分子束磊晶法研製三種以砷化鎵材料為基礎之高電子移動率場效電晶體。藉由新穎的結構設計、歐姆掘入製程及無電鍍沈積法，完整的探討其對元件特性之影響，包含直流、微波、熱穩定度及可靠度特性…等。實驗結果顯示，所研製的元件展現出良好的特性及高溫操作能力。而這些優點表示元件適合應用於高速、高頻率及高溫電子電路中。
首先，在磷化銦鎵/砷化銦鎵/砷化鎵擬晶性高電子移動率電晶體上，選擇磷化銦鎵材料作為蕭特基層及緩衝層、砷化銦鎵材料作為雙通道結構及設計漸變式三層平面摻雜作為載子提供層，使得元件具有良好的直流及高頻特性。此外，理論上的分析使用模擬軟體探討元件特性，並與實驗量測結果進行比較。從實驗上得知，模擬分析與實驗量測的結果相符合。
其次，以無電鍍沈積法研製一種砷化鋁鎵/砷化銦鎵/砷化鎵空乏型及增強型擬晶性高電子移動率電晶體。藉由低溫與低能量的沈積特性，可減少表面熱破壞及表面態位密度，以在鈀/砷化鋁鎵間形成良好的蕭特基接面。從實驗的結果發現，無電鍍元件顯示優良的直流特性。另外，亦探討不同溫度環境下無電鍍沈積法對元件特性所造成的影響。此外，無電鍍沈積法也具有以下優點，諸如低成本以及操作簡單。
最後，探討具有非退火式的歐姆掘入之砷化銦鋁/砷化銦鎵變晶性高電子移動率電晶體。利用一種歐姆掘入技術降低元件之寄生電阻，並可免除高溫熱退火製程改善因退火而造成元件的破壞。因此，具非退火式的歐姆掘入技術結構預期改善元件之寄生電阻、直流及微波等特性。此外，所研製元件可得到較佳的高溫操作能力及相對較佳的熱穩定度及可靠度。

In this dissertation, three different GaAs-based high electron mobility field-effect transistors, grown by a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) system, are fabricated and studied. Through the newly designed structure, Ohmic-recess process, and electroless-plated deposition approach, the device characteristics including the DC, microwave, thermal stability, and reliability performance are investigated. Experimentally, the studied devices show good device characteristics and high temperature operation capability. These advantages suggest that the proposed devices are suitable for high-speed, high-frequency, and high-temperature electronics applications.
First, the temperature-dependent characteristics of InGaP/InGaAs/GaAa pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Due to the employed InGaP Schottky and buffer layers, InGaAs double channel structure, and graded triple delta-doped sheets, both DC and microwave performance are improved. Moreover, a theoretical analysis based on a 2-D semiconductor simulation package is used to study the device properties and compare the experimental results. Good agreement between the theoretical analyses and experimental results are found.
Second, the characteristics of an AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless plated (EP) deposition approach are studied and investigated. Based on the low-energy and low-temperature deposition conditions, the Pd/AlGaAs Schottky interface suffers less thermal damage and disordered-states. Experimentally, the EP-based device shows a significantly improved DC performance. In addition, the temperature influences of the studied devices, at the temperature regime of 300 to 500K, are studied. Moreover, the EP approach also has the advantages of easy operation and low cost.
Finally, the temperature-dependent characteristics of an InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic-recess (NAOR) approach are fabricated and systematically studied. The proposed NAOR approach could reduce the parasitic resistance caused by large conduction band discontinuity at InAlAs/InGaAs interface. The used NAOR approach shows benefits of the absence of thermal treatment (non-annealed) for Ohmic contact. Therefore, the improvement of device performance in terms of parasitic resistance and DC as well as microwave characteristics can be expected. Moreover, the relatively lower variations of device performance over wide temperature range (300 ~ 500 K) are obtained.

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