半導體製程淺溝槽隔離在一般的Logic元件中，從薄膜和黃光圖形的搭配，是一道不複雜的製程，但在BCD元件中，將矽基板換成磊晶後，製程行為變得複雜，其中就包含錐狀的缺陷過多，雖然這種缺陷本身不影響良率，但若數目過多會影響到其他缺陷的檢出率，導致本該發現的其他種會影響良率的缺陷，未能及時發現，影響產線的良率，普通Logic製程使用的蝕刻程式或相關製程，需要最調整優化。
本實驗利用實驗設計法，選定品質與特性，採用田口法，將可能的因子利用L12直交表，實驗並分析找出影響品質的關鍵因子，再利用L18直交表，做最佳化分析，實驗並驗證結果。最終除缺陷以外的其他品質，都能符合規格並接近品質目標，而最重要的錐狀缺陷有顯著的改善。

This paper introduces the process of STI (shallow trench isolation) which applied in the integrated circuit mass production. Yield is important profit factor of semi-conductor process, and some types of defect is yield killer. STI cone defect is not a type of yield killer, but it will affect defective rate of other types defect when there is a lot of STI cone defects. This paper study the improvement method of reduction STI cone defect.
To optimize cone defect of STI etching process, list etching recipe parameters and define quality items. Using orthogonal table L12 find out key factor which affect quality items especially cone defect number, then using L18 optimize relative parameters. Finally verify the result of optimizing condition, and it improved cone defect count and other qualities are also satisfied requirement.

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