本論文主要探討成長溫度的改變與鎳原子的摻雜對五環素薄膜的影響，利用分子束磊晶系統蒸鍍五環素，電子鎗系統同時摻雜鎳原子，並以熱輻射的方式加熱基板，提高成長溫度使分子獲得動能進而改變薄膜特性，期望得到較寬的磁滯空間，並探討五環素的2p軌域與鎳原子的3d軌域耦合，以五環素作為磁性傳遞橋樑，於室溫環境中觀察到有機磁性薄膜具有殘磁現象。
此部分實驗鎳與五環素摻雜比例為，鎳原子數：五環素分子數=0.33：1。由XRD結果分析，在成長溫度為20 °C時，五環素薄膜與摻雜鎳的五環素薄膜皆為薄膜相；在成長溫度為50 °C時，五環素薄膜與摻雜鎳的五環素薄膜同時有薄膜相與塊材相存在，在晶面(001)繞射中，塊材相強度比上薄膜相強度，五環素薄膜的比值大於摻雜鎳的五環素薄膜的比值。AFM的結果顯示，當成長溫度為50 °C時，五環素分子因獲得熱能而能使得分子聚集在一起，則晶粒較大；摻雜鎳的五環素薄膜，五環素分子雖獲得熱能，但鎳原子會阻礙五環素分子往橫向擴散，因此晶粒較小。由MFM分析有機磁性薄膜，成長溫度50 °C時，摻雜鎳的五環素薄膜在室溫環境有殘磁的存在，且成長溫度50 °C的薄膜比成長溫度20 °C的薄膜，其相位變化更明顯。
由拉曼光譜儀分析摻雜鎳對五環素薄膜的影響，摻雜鎳的五環素薄膜外加磁場後會造成五環素分子耦合的提高，五環素分子側邊C-H振動訊號產生紅位移現象。比較pentacene側邊的C-H振動與內部的苯環振動之拉曼訊號強度比值，發現強度比值下降可說明Ni 與Pentacene 之間的電子自旋耦合提高。

Magnetic organic semiconductor thin films composed of pentacene molecules and Ni atoms were fabricated via molecular beam epitaxy and electron beam deposition under different deposition temperatures. When deposition temperature was increased, pentacene molecules and Ni atoms could obtain sufficient kinetic energy, facilitating Ni atoms to be at preferable positions among pentacene molecules. Through Raman spectroscopy analyses of Ni-doped pentacene films, we observed the existence of electronic coupling between the 2p orbital of pentacene molecules and 3d orbital of Ni atoms. Furthermore, the electronic coupling would be enhanced strongly after applied an external magnetic field to the Ni-doped pentacene film. The topographies of different pentacene films, which could be observed from atomic force microscopy (AFM), were dissimilar. Magnetic properties of Ni-doped pentacene films were examined via magnetic-field-dependent magnetization, M-H, at the room temperature. The models of magnetic transition, magnetic transmission bridge, were proposed to explain the remnant magnetization of the magnetic organic semiconductor thin film.

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