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研究生：	許祐凌 Hsu, Yu-Ling
論文名稱：	利用氮化矽氮化鎵多緩衝層於氮化鎵光檢測器之研究 The study of GaN photodetectors with multi-pair SiN/GaN buffer layer
指導教授：	許進恭 Sheu, Jinn-Kong 蘇炎坤 Su, Yan-Kuin
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程研究所 Institute of Electro-Optical Science and Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	130
中文關鍵詞：	氮化矽氮化鎵多緩衝層、蕭基二極體、金半金光檢測器
外文關鍵詞：	MSM photodetector, Schottky diode, multi-pair SiN/GaN buffer layer
相關次數：	點閱：87 下載：1
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在本論文中，我們利用有機化學氣相沉積系統成長出具有氮化矽氮化鎵多緩衝層的三五族氮化物材料。為了得到高品質的磊晶材料，成長氮化矽的參數，例如成長時所通入的二矽乙烷、成長溫度，以及成長時間等都已經被最佳化。同時我們利用一些分析設備來對我們所成長出來的磊晶品質上的分析，而分析的設備包含霍耳量測、光致發光分析、高解析度X 光繞射儀、穿透率分析儀、原子力顯微鏡，以及掃描式電子顯微鏡。具有這種氮化矽氮化鎵多緩衝層的金半金光檢測器和蕭基二極體最後被製造出來並對它的元件特性做分析。
跟傳統的低溫緩衝層比較起來，這種利用氮化矽氮化鎵雙緩衝層的磊晶材料確實有達到改善磊晶品質的目標。而磊晶品質改善前後由以下幾點說明：電子遷移率由 213 增加到 525 cm2/V-s、電子濃度由 -7.68 x 1017 降到 -2.58 x 1017 cm-3、X 光的半高寬由 425.3 降到 371.5 arcsec (102 面)，以及光致發光中之黃光波段與主波段的比值由 0.51 下降到0.35，再加上利用原子力顯微鏡和掃描式電子顯微鏡表面之比較，可發現確實加上多層氮化矽可達到提升磊晶品質的目標，並可有效降低材料本身的一些差排和缺陷等造成磊晶品質不好的因素。
最後我們比較具有氮化矽氮化鎵多緩衝層和一般傳統的低溫緩衝層的氮化鎵材料所製造出來的金半金光檢測器和蕭基二極體元件的特性。我們可以發現具有氮化矽氮化鎵多緩衝層的元件它有比較低的暗電流、比較大的光暗電流比、比較大的紫外光對可見光比和較佳的檢測率。而且經由計算出來樣本的蕭基能障在具有氮化矽氮化鎵雙緩衝層還是比傳統的低溫緩衝層還要大。此外金半金光檢測器由於加入氮化矽改善磊晶品質的關係，因此量測出來在雜訊上的表現比傳統緩衝層還好來得好。在論文中我們也討論了一些漏電流的傳導機制，並且發現加入氮化矽後有抑制漏電流的效果，因此使得元件的特性上得到改善。

In this thesis, the nitride-based III-V alloys with multi-pair SiN/GaN buffer layer had been grown and characterized by metal organic chemical vapor deposition system (MOCVD). In order to realize high quality epitaxial layer, the growth conditions, such as Si2H6 flow, SiN growth temperature and growth time had been optimized. Several analysis techniques, such as Hall measurement, photoluminescence (PL), X-ray diffraction (XRD), transparency analysis instrument, atomic force microscopy (AFM), and scanning electron microscopy (SEM) had also been performed to characterize the crystal quality of these epitaxial layers. Metal-semiconductor-metal (MSM) photodetectors and the Schottky barrier diodes were then fabricated and characterized with novel multi-pair SiN/GaN buffer layer.
Compare to the traditional low temperature (LT) GaN buffer layer, the epitaxial film with multi-pair SiN/GaN buffer layer had greatly improved. According to the Hall measurement, the electron mobility were increased from 213 to 525 cm2/V-s, and the carrier concentration were decreased from -7.68 x 1017 to -2.58 x 1017 cm-3. The FWHM in XRD (102) and the PL ratios of IYL/IBE were both decreased from 425.3 to 371.5 arcsec and 0.51 to 0.35, respectively. Furthermore, AFM and SEM images also showed that the dislocations and defects could be dramatically reduced by inserting multi-pair SiN/GaN buffer layer.
Finally, the MSM photodetectors and Schottky diode were fabricated by using GaN materials with compared multi-pair SiN/GaN buffer layer and LT GaN buffer layer. The related study of devices performance had also been finished. It could be found that the samples with multi-pair SiN/GaN buffer layer had a lower dark current, larger photo current to dark current contrast ratio, larger UV-to-Visible rejection ratio, and better detectivity. The Schottky barrier height of the devices with multi-pair SiN/GaN buffer layer calculated by Schottky diode was larger than that with LT GaN buffer layer. Moreover, the noise properties of fabricated MSM photodetectors with multi-pair SiN/GaN buffer layer were lower than that with LT GaN buffer layer. This could be also attributed to that inserting multi-pair SiN/GaN buffer layer would increase the epitaxial quality and improve the devices performance. The leakage transport mechanism had also been discussed. The reduction of dislocations and defects in the surface would avoid the leakage current caused from traps assisted tunneling.

Contents

Abstract (in Chinese)……………………………………………..………...…Ι
Abstract (in English)………………………………………………..…...…..ΙII
Acknowledgements…………………………………………………………..V
Contents………………………………………………………….......……..VII
Table Captions....……………………………………..………...........……..XII
Figure Captions……………………..………………………..........……....XIV

Chapter 1 Introduction……………………………………………….1
1-1 Background……………………………………………………...............1
1-2 Motivation……………………………………………………...………..4
1-3 Program…………………………………………………………...……..6
Reference…………………………………………………………………….9

Chapter 2 Basic Theory and Measurement System…………....11
2-1 Multi-pair SiN/GaN buffer layer……………….…………….......…….11
2-2 Theory of Metal-Semiconductor contact………………………............13
2-3 Principle of the MSM photodetector…………………………………..15
2-4 Measurement instruments…………………………………………...…18
2-4.1 Hall measurement……………………………………………....18
2-4.2 The Responsivity Measurement Systems and Other Measurement Systems………………………………………………………....18
2-4.3 Atomic Force Microscopes (AFM)…………………………....19
2-4.4 X-ray Diffraction (XRD)……………………………………….20
Reference…………………………………………………………………...31

Chapter 3 Material Analysis………………………………………..32
3-1 Conventional LT and multi-pair SiN/GaN buffer layer………………..32
3-2 Hall measurement…………………………………………….………..32
3-3 XRD analysis………………………………….……………………….33
3-4 PL spectea…………………………………….……………………….33
3-5 AFM and SEM image………………………………….……………….34
3-6 Summary……………………………………..……….……………….34
Reference…………………………………………………………………...44

Chapter 4 The fabrication of the GaN based Schottky diode and MSM photodetectors with multi-pair SiN/GaN buffer layer…45
4-1 Multi-pair SiN/GaN buffer layer………………………………………..45
4-2 Fabrication process of the device structure………………….………….47
4-2.1 GaN-ITO MSM photodetectors……………………..……………47
4-2.2 GaN-ZnO MSM photodetectors……………………..……………48
4-2.3 GaN-ITO Schottky diode………………………..…….…………49
4-2.4 GaN-ZnO Schottky diode…………………………….…..………50
4-3 The measurement of fabricated Schottky diode and MSM photodetectors
………………………………………………………….…………………..52
Reference…………………………………………………………………...57

Chapter 5 The characteristics of Nitride-based MSM photodetectors with multi-pair SiN/GaN buffer layer…............58
5-1 Nitride-based MSM photodetectors with conventional LT and multi-pair SiN/GaN buffer layer……………………………………………….....58
5-2 Characteristics of GaN MSM photodetectors with conventional LT and multi-pair SiN/GaN buffer layer………………………………………..59
 5-2.1 Characteristics of GaN-ITO MSM photodetectors………………59
         5-2.1-1 Epitaxial and deposit condition…………………………59
5-2.1-2 Photo and dark current…………………………..………60
5-2.1-3 Responsivity analysis…………………………..……….61
         5-2.1-4 Noise analysis………………………………..….………62
5-2.1-5 Summary……………………………………..………….64
5-2.2 Characteristics of GaN-ZnO MSM photodetectors………...……65
         5-2.2-1 Epitaxial and deposit condition…………………………65
5-2.2-2 Photo and dark current…………………………..………66
5-2.2-3 Responsivity analysis…………………………..……….67
         5-2.2-4 Noise analysis……………………………..……………68
5-2.2-5 Summary……………………………………………….69
Reference…………………………………………………….……………...91


Chapter 6 The characteristics of Nitride-based Schottky diode with conventional LT and multi-pair SiN/GaN buffer layer....92
6-1 Characteristics of Nitride-based Schottky diode with conventional LT and multi-pair SiN/GaN buffer layer…………………………………….....92
6-1.1 Characteristics of GaN-ITO Schottky diodes……………….…..92
         6-1.1-1 Epitaxial and deposit condition…………………………92
6-1.1-2 Photo and dark current………………………….………94
6-1.1-3 Schottky barrier height determination–Method I 
(I-V)…………………………………………………….95
         6-1.1-4 Schottky barrier height determination–Method II 
(F-V)…………………………………………………….96
6-1.1-5 Schottky barrier height determination–Method III
      (H-I)………………………………….………………….98
6-1.1-6 Detectivity fitting analysis………...…………………….99
6-1.1-7 Summary………………………………………………100
6-1.2 Characteristics of GaN-ZnO Schottky diodes…………………..101
         6-1.2-1 Epitaxial and deposit condition………………………101
6-1.2-2 Photo and dark current………………………………103
6-1.2-3 Schottky barrier height determination–Method I
      (I-V)………………………………………………….104
         6-1.2-4 Schottky barrier height determination–Method II 
(F-V)……………………….………………………....105
6-1.2-5 Schottky barrier height determination–Method III
      (H-I)……………………….………………………….107
6-1.2-6 Detectivity fitting analysis……………….……………108
6-1.2-7 Summary………………………………………………109
Reference…………………………………………………………………...128

Chapter 7 Conclusions and Future Work…………….……..….129
7-1 Conclusions……………………………..………………….……....129
7-2 Future work…………………………...………………………..….130
                                    

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校內：2011-08-07公開
校外：2011-08-07公開

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