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研究生： 蔡文益
Tsai, Wen-Yi
論文名稱： 氮化鎵奈米晶體之成長及應用
The growth and application of GaN nanocrystals
指導教授： 洪昭南
Hong, Chau-Nan
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2012
畢業學年度： 100
語文別： 中文
論文頁數： 93
中文關鍵詞： 電漿輔助化學氣相沉積 、氮化鎵 、奈米晶體 、發光二極體
外文關鍵詞： PECVD, GaN, nanocrystal, LED
相關次數： 點閱：68  下載：1 
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    • 　　本研究以電漿輔助化學氣相沉積法(Plasma Enhanced Chemical Vapor Deposition, PECVD)製備氮化鎵晶體。
    　　研究結果顯示，於電漿輔助下，可成長倒六角錐氮化鎵晶體，藉由Ｘ光繞射、穿透式電子顯微鏡分析氮化鎵晶體，顯示晶體成長方向為[0001] 纖鋅礦結構之氮化鎵晶體，且[0001]垂直於基板表面。晶體成長速率為線性成長，軸向速率為17nm/min，徑向(晶體頂端)速率為4nm/min。由實驗結果顯示，氮化鎵晶體可於氧化鋁基板，成長出規則排列的氮化鎵晶體。
    　　嘗試於氧化鋁基板上成長氮化鎵薄膜，並通以氮化鎂蒸氣作為鎂摻雜之前驅物，製備成p型氮化鎵薄膜。本研究以p型氮化鎵薄膜與n型氮化鎵晶體製備發光二極體元件結構，藉由電性量測分析顯示，其元件具備整流特性。

    This study focuses on gallium nitride crystal growth by plasma enhanced chemical vapor deposition.

    Experimental results showed the assist of plasma, upside down hexagonal cone gallium nitride crystals. X-ray diffraction and TEM analysis showed the direction of crystal growth is [0001] with self-vertically aligned Wurtzite structure. Crystal growth rate is linear, where vertical rate is 17nm/min, horizontal rate is 4nm/min. Results showed that ordered alignment gallium nitride crystals can be grown on sapphire susbtrates.

    We also tried to grow both n-type and p-type gallium nitride thin film on sapphire substrate. From current-voltage measurement, this study demonstrates rectifying behavior of the device structure made with p-type gallium nitride thin film and n-type gallium nitride crystal.

    摘要 I 目錄 IV 表目錄 VII 圖目錄 VIII 第一章 緒論 1-1　前言 1 1-2　發光二極體 2 1-3　奈米科技與奈米材料 5 1-4　研究目的 10 第二章 理論基礎 2-1　氮化物 11 2-2　氮化鎵 13 2-3　氮化鎵之應用 14 2-4　成長一維奈米材料 15 2-4-1　Vapor-Liquid-Solid (VLS)機制 17 2-4-2　Vapor-Solid-Solid (VSS)機制 20 2-4-3　Vapor-Solid(VS)機制 21 2-5　電漿原理 22 2-5-1　電漿定義與特性 22 2-5-2　電介質放電 (Dielectric barrier discharge, DBD) 28 第三章 實驗步驟與方法 3-1　實驗流程 31 3-2　實驗裝置 32 3-2-1　電漿輔助管狀高溫爐 32 3-2-2　實驗材料 34 3-3　實驗步驟 36 3-3-1　基板前處理 36 3-3-2　VS機制之奈米晶體成長 36 3-3-3　p型氮化鎵薄膜成長 37 3-4　分析儀器 37 3-4-1　掃描式電子顯微鏡 37 3-4-2　能量散佈分析儀(EDS or EDX) 40 3-4-3　穿透式電子顯微鏡 40 3-4-4　X光繞射分析儀 41 3-4-5　光激發螢光光譜 46 3-4-6　霍爾效應量測 52 第四章 結果與討論 4-1　氮化鎵晶體成長 55 4-1-1　氮化鎵晶體成長時間變化之探討 61 4-2　基板種類對於氮化鎵晶體成長之影響 68 4-3　氮化鎵晶體於不同成長溫度之探討 75 4-4　氮化鎵薄膜成長 79 4-4-1　P型氮化鎵薄膜成長 85 4-5　氮化鎵晶體之發光二極體元件製作 87 第五章 結論 5-1　總結 90 參考文獻 91

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