中文摘要
本論文主要分為兩部份，第一部份為我們使用射頻濺鍍的方式來沉積氧化銦鋅透明導電膜，在實驗中發現，若將透明導電膜沉積在玻璃上的最佳條件運用於上發光有機發光元件上將是不適用的，且明顯的可以看到壓縮應力所造成的龜裂現象，因此氧化銦鋅緩衝層的沉積是必要的。此外，由於上陽極發光有機發光元件之陽極，不像傳統元件可以直接對陽極部進行表面處理，因此F4-TCNQ掺雜於CuPc以提升電洞注入是必須的。而氧化銦鋅透明導電膜應用於上發光有機發光元件，在電流密度為168mA/cm2操作下有最大亮度2130cd/m2，且電流效率與功率效率分別為1.72cd/A和0.29lm/W。

第二部份為進行上陰極有機發光元件的製作，使用半透明金屬Al及光學匹配材料ZnS當頂部電極，能有效的使光耦合至外部，且元件在13V時，有最高亮度19300cd/m2，最高電流效率3.28cd/A，為無使用光學匹配層的1.7倍。另一方面，上陰極有機發光元件中，光學匹配層的厚度為40nm時，發出的光色很接近純綠光520nm，也就是說具有較最佳的顏色飽和度。

Abstract
This subject was divided into two parts. The first was fabrication of top anode organic light emitting device for sputtering process. In the experiment, we found that the film of IZO was deposited on glass which was good. However, the same condition was deposited on the organic layer which was not suitable. Because we would find that the stress was resulted from compress stress. Therefore, it was important that the buffer layer was deposited on the organic layer .Besides, due to the anode of the top anode organic light emitting device could not treat for surface. Therefore, it was necessary that the F4-TCNQ was dopped in the CuPc. It could enhance the hole injection effectively. When the device structure was Al(80nm)/LiF(1.5nm)/Alq(50nm)/NPB(15nm)/CuPc:F4-TCNQ(15nm)/IZO, the maximum brightness was 2130cd/m2. And the current efficiency was 1.72cd/A.
The second was fabrication of top cathode organic light emitting device. We would use the half transparent metal which was the Al and the optical matching material which was the ZnS. When the device structure was Ag(80nm)/CuPc:F4-TCNQ(15nm)/NPB(30nm)/Alq(70nm)/BCP(10nm)/Cs2CO3(1.5nm)/Al(15nm)/ZnS(40nm), it had the maximum brightness which was 19300cd/m2. It had the color saturation better than the device structure was Ag(80nm)/CuPc:F4-TCNQ(15nm)/NPB(30nm)/Alq(70nm)/BCP(10nm)/Cs2CO3(1.5nm)/Al(15nm), too.

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