本研究以低功率和無添加任何氫氣和氧氣之Ar/CH4的混合之微波電漿輔助化學氣相沉積法成長鑽石薄膜。在成長鑽石薄膜的反應過程中過多的碳含量會在反應腔體內形成非鑽石相的石墨，因此為了防止這類不良的氣相反應，在一個固定氣體壓力和混合氣體的比率等條下，降低流入反應腔體的氣體流量，觀察氣體駐留在腔體的反應時間對成長鑽石薄膜之影向進行研究。首先將預設好的總混合氣體流量固定，在氣體流入反應腔體前方計置一個配有質量流量控制器的分流系統，將一部份的氣體借由此系統排放出去，只讓所需要之氣體流量進入反應腔體內，進行反應。在這過程中混合氣體的比率、氣體壓力、微波功率及基板溫度都保持不變。當分流總氣體流量百分比到達一定的流量時，實驗結果顯示，一個品質良好、表面平滑的超奈米鑽石薄膜成功沉積在矽基板上。此外也利用Ar/CH4混合氣體所形成的電漿之自體偏壓使基板與電漿之間相互作用達到最佳化，進而促進鑽石薄膜的成長。通過微調製程氣體壓力使Ar/CH4混合氣體形成的微波電漿與基板在一定的距離下相互作用，在沒有添加任何的氫或氧的情況下可使鑽石薄膜的晶粒由超奈米鑽石增長至微米鑽石晶粒般的大小。

For low-power and low-temperature microwave plasma CVD of UNCD in gas mixtures of methane and argon without hydrogen and oxygen additives, excessive carbon containing species often induce gas phase synthesis of non-diamond carbon phases, which fall on diamond growing surfaces to become part of the deposited diamond films. To prevent undesirable gas phase reactions, effects of gas residence time, or equivalently, the total gas flow rate at a fixed gas pressure and compositions, on the microwave plasma and its deposition of UNCD are studied. The gas residence time is increased by by-passing an increasing amount of a pre-set mixture of methane and argon at a fixed total flow rate through a mass flow controller to a vacuum pump while allowing the rest of the gas feed to flow through the reaction chamber. The gas composition, gas pressure, microwave power, and substrate temperature are kept constant. Optimization of the UNCD growth is, thus, achieved by increasing the gas residence time to deposit UNCD of high phase purity. By reducing the total flow rate of the Ar/CH4 gas mixture until orange plasma carbon soot is minimized, the best smooth film is obtained. Microwave plasma self-bias enhanced diamond growth in Ar/CH4 is achieved on Si by optimizing interactions between the substrate and the plasma. Through fine tuning substrate-plasma interactions, crystalline properties of diamond films grown by Ar/CH4 microwave plasma can be fine tuned from UNCD to MCD without hydrogen or oxygen additives.

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