本論文主要利用三極電鍍法製備二硒化銅銦奈米柱，是藉由薄膜式陽極氧化鋁(Anodic aluminum oxide, AAO)模板來輔助製備。將模板完全移除後得到CuInSe2(CISe)奈米柱，將其當作光電元件的吸收層，並在奈米柱上方使用直流濺鍍一層高穿透率及高導電性質的氧化銦錫(Indium Tin Oxide, ITO)薄膜，可以用來當作光電元件的窗口層。應用於光電元件，利用奈米柱結構與平面結構相比較，奈米柱結構具有高抗反射能力以及較多的吸光面積，期望透過此種一維奈米結構，能進一步提升光電轉換能力。
利用以上結構形成具整流特性之P-N接面二極體。利用各層材料的最佳參數製備奈米柱光電元件，並量測其二極體整流電性，其順向電流密度為5.67 mA/cm2、逆向電流密度為-0.26 mA/cm2以及順逆向電流密度比值為21.8倍。應用於太陽能電池，得到短路電流密度為0.082mA/cm2、開路電壓為0.75 volt、填充因子為0.519以及光電轉換效率為0.0319 %。

In this research, the pulsed three-electrode plating method is used to fabricate the CuInSe2 (CISe) nanorods through anodic aluminum oxide (AAO) template. After template removing, CISe nanorods are used as the absorption layer. Using the DC-sputtering method is used to deposit the indium tin oxide (ITO) thin film with high transmittance and good conductivity on the CISe nanorods. Compared with the planar structure, nanorod structure has the advantages of high anti-reflection capability and more light absorption area. Therefore, it is expected that the nanorod structure has good photoelectric conversion capability, which can be applied to optoelectronic devices inclusive of the solar cell, photodetector and image sensor.
This research adopts the top-down structure of ITO thin film, CISe nanorod and p-type heavily doped silicon substrate to form the P-N junction diode with rectifying characteristics. With the optimal parameters of each layer, the electrical characteristics of the nanorod photoelectric element is the rectification of the diode with the forward current density 5.67 mA/cm2、the reverse current density -0.26 mA/cm2 and the on/off ratio is 21.8 times. Applied to the solar cell, the short circuit current density is 0.082 mA/cm2, the open circuit voltage is 0.75 volt, the fill factor is 0.519, and the photoelectric conversion efficiency is 0.0319%.

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