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研究生: 謝育民
Shieh, Yu-Min
論文名稱: 電子在半導體量子點中的傳輸性質與穿隧率
Electron transport and tunneling rate in semiconductor Quantum Dots
指導教授: 陳鐵城
Chen, Tei-Chen
學位類別: 碩士
Master
系所名稱: 工學院 - 機械工程學系
Department of Mechanical Engineering
論文出版年: 2004
畢業學年度: 92
語文別: 中文
論文頁數: 96
中文關鍵詞: 量子點穿隧
外文關鍵詞: quantum dot, tunneling
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  •   隨著半導體製造技術在近幾十年來迅速地進步,元件尺寸持續縮小,使得製造量子點技術上能進一步的發展,且在雙量子點的運用上,更是成為了目前極力發展實現量子計算的系統之一。在理論上,利用雙量子點所組成的量子位元(quantum bit)可以取代古典電腦而實現量子電腦中的量子運算,然而在任何兩個量子能階系統都可以被當作一個量子位元。運用如此的量子位元加上其量子電腦的邏輯運算,對未來發展量子電腦的貢獻是必然的。
      然而由這雙量子點所組成的量子位元,其電子在量子點間的傳輸受到庫倫效應的交互作用影響,所以其傳輸的性質極為複雜,因此在發展量子位元計算的過程,必須掌握這些性質。而本文在前半段部分將一連串的介紹量子點的運用與發展,在後半段部分我們將模擬單電子在量子井和球狀量子點中其尺寸和穿隧率的關係,並進一步的探討其共振穿隧的情形。

      In the recent years, the technology of semiconductor manufacture makes progress rapidly and the size of photoelectric elements is continuously reduced to get advance in the manufacture of the quantum dots. In addition, the utilization in the double quantum dots has become to realize one of the developments in the systems of quantum computation. The theoretical possibility to perform certain tasks in a much more efficient way using a `quantum computer' instead of a `classical computer', has stimulated the search for physical realizations of the basic building block of such a computer:the quantum bit. In principle, any quantum two-level system can be used as a qubit. In particular, recent studies have put forward double quantum dots as interesting candidates for realizing qubits. The possible application of double quantum dot devices in quantum logic forms an important motivation forthis work.
      However electron that transports through the double quantum dots made of qubits is affected by the electronic correlation of the Coulomb’s effect.Consequently,the phenomenon of electron transport becomes very complex. Therefore, we must study those properties and use them to develop the qubits. In this article we will introduce the applications and developments of the quantum dots and we will simulate the tunneling rate for the facts of the size in quantum wells and quantum dots in the latter sections.In addition, we discuss the resonant tunneling in the extreme small size.

    中文摘要 Ⅰ 英文摘要 Ⅱ 誌謝 Ⅳ 目錄 Ⅴ 表目錄 Ⅷ 圖目錄 Ⅸ 符號說明 XIV 第一章 緒論 1 1-1 前言 1 1-2 文獻回顧 2 1-3研究動機與目的 5 1-4 本文架構 7 第二章 電子的傳輸性質 9 2-1 量子點 9 2-1-1量子點的製造 10 2-1-2 半導體量子點的應用 12 2-2 奈米材料中的量子效應 13 2-2-1. 量子侷限效應 14 2-2-2. 量子穿隧效應 16 2-2-3. 庫倫阻塞效應 17 2-3 單電子的傳輸 18 2-3-1 單電子晶體 18 2-4 單電子組成結構裝置 23 2-4-1 金屬穿隧連接(Metal tunnel junctions) 23 2-4-2 半導體穿隧連接(Semiconductor tunnel junctions) 26 第三章 雙量子點 29 3-1 線性傳輸 29 3-1-1 古典理論 29 3-1-2 量子理論 34 3-1-3 實驗 35 3-2 非線性傳輸 37 3-3 共振穿隧(Resonant tunneling) 39 3-4 微波光譜的量測(Microwave spectroscopy) 42 3-4-1弱耦合(weakly coupling) 43 3-4-2強耦合(strongly coupling) 46 第四章 理論分析 48 4-1 薛丁格方程(Schrödinger's Equation) 48 4-2 球中的粒子(Particle in a sphere) 52 4-3 單位能障(Single Barrier) 54 4-4 雙位能障(Double Barrier) 55 4-5 共振穿隧電流 60 4-5-1同調穿隧(Coherent tunneling) 60 4-5-2藍道爾公式 (Landauer formula) 63 第五章 結果與討論 68 5-1 單位能障礙 69 5-2 雙位能障礙 72 5-3 多位能障礙 78 5-4 量子點的穿隧 82 第六章 結論與未來展望 87 6-1 結論 87 6-2 未來與展望 88 參考文獻 89 附錄一 94 自述 96

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