| 研究生: |
謝育民 Shieh, Yu-Min |
|---|---|
| 論文名稱: |
電子在半導體量子點中的傳輸性質與穿隧率 Electron transport and tunneling rate in semiconductor Quantum Dots |
| 指導教授: |
陳鐵城
Chen, Tei-Chen |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 機械工程學系 Department of Mechanical Engineering |
| 論文出版年: | 2004 |
| 畢業學年度: | 92 |
| 語文別: | 中文 |
| 論文頁數: | 96 |
| 中文關鍵詞: | 量子點 、穿隧 |
| 外文關鍵詞: | quantum dot, tunneling |
| 相關次數: | 點閱:75 下載:1 |
| 分享至: |
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隨著半導體製造技術在近幾十年來迅速地進步,元件尺寸持續縮小,使得製造量子點技術上能進一步的發展,且在雙量子點的運用上,更是成為了目前極力發展實現量子計算的系統之一。在理論上,利用雙量子點所組成的量子位元(quantum bit)可以取代古典電腦而實現量子電腦中的量子運算,然而在任何兩個量子能階系統都可以被當作一個量子位元。運用如此的量子位元加上其量子電腦的邏輯運算,對未來發展量子電腦的貢獻是必然的。
然而由這雙量子點所組成的量子位元,其電子在量子點間的傳輸受到庫倫效應的交互作用影響,所以其傳輸的性質極為複雜,因此在發展量子位元計算的過程,必須掌握這些性質。而本文在前半段部分將一連串的介紹量子點的運用與發展,在後半段部分我們將模擬單電子在量子井和球狀量子點中其尺寸和穿隧率的關係,並進一步的探討其共振穿隧的情形。
In the recent years, the technology of semiconductor manufacture makes progress rapidly and the size of photoelectric elements is continuously reduced to get advance in the manufacture of the quantum dots. In addition, the utilization in the double quantum dots has become to realize one of the developments in the systems of quantum computation. The theoretical possibility to perform certain tasks in a much more efficient way using a `quantum computer' instead of a `classical computer', has stimulated the search for physical realizations of the basic building block of such a computer:the quantum bit. In principle, any quantum two-level system can be used as a qubit. In particular, recent studies have put forward double quantum dots as interesting candidates for realizing qubits. The possible application of double quantum dot devices in quantum logic forms an important motivation forthis work.
However electron that transports through the double quantum dots made of qubits is affected by the electronic correlation of the Coulomb’s effect.Consequently,the phenomenon of electron transport becomes very complex. Therefore, we must study those properties and use them to develop the qubits. In this article we will introduce the applications and developments of the quantum dots and we will simulate the tunneling rate for the facts of the size in quantum wells and quantum dots in the latter sections.In addition, we discuss the resonant tunneling in the extreme small size.
[1]. M.A. Nielsen and I.L. Chuang , “Quantum Computation and Quantum Information”, Cambridge University Press (2000).
[2]. D. Bouwmeester, A. Ekert, and A. Zeilinger, “The Physics of Quantum Information“,Springer-Verlag Berlin (2000).
[3]. C.J. Gorter , Physica 17, 777 (1951).
[4]. I.V. Giaever and H.R. Zeller, Phys. Rev. Lett. 20, pp.1504 (1968).
[5]. L. Esaki, R. Tsu, Appl. Phys. Lett. Vol.22 No.11(1973)
[6]. L. L. Chang ,L.Esaki, R.Tsu. Phys.Lett. Vol.24 No.12(1974)
[7]. L. L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett. 24, pp.593 (1974).
[8]. R. Dingle ,W. Wiegmann , and C. H. Henry, Phys. Rev. Lett. 33, pp.827 (1974)
[9]. K. von Klitzing, G. Dorda, and M. Pepper, Phys. Rev. Lett. 45, pp.494 (1980).
[10]. For a review see R. Cingolani and R. Rinaldi , “Electronic States and Optical Transitions in Low-Dimensional Semiconductors”, La Rivista del Nuovo Cimento 16 (9) (Editrice Compositori, Bologna, 1993)
[11]. M. A. Reed, R. T. Bate, K. Bradshaw, W. M. Duncan, W. M. Frensley , J. W. Lee, and H. D. Smith, J. Vacuum Sci. Technol . B, 4, pp.358 (1986).
[12]. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl.Phys.Lett. 49, pp.1275 (1986).
[13]. H. Temkin, G. J. Dolan, M. B. Panish, and S. N. G. Chu, Appl. Phys. Lett. 50, pp.413 (1987).
[14]. K. Kash, A. Scherer, J. M. Worlock, H. G. Craighead, and M. C. Tamargo,Appl. Phys. Lett. 49, pp.1043 (1986).
[15]. M. A. Kastner, Physics Today, (1) 24 (1993)
[16]. Arvind Kumar, Steven E. Laux, and Frank Stern, Phys. Rev. B 42, pp.5166 (1990).
[17]. M. Stopa, Phys. Rev. B 54, pp.13767 (1996).
[18]. U. Merkt, J. Huser, and M. Wagner, Phys. Rev. B 43, pp.7320 (1991).
[19]. P. A. Maksym and Tapas Chakraborty, Phys. Rev. B 45, pp.1947 (1992).
[20]. S.-R. Eric Yang, A. H. MacDonald, and M. D. Johnson, Phys. Rev. Lett. 71, pp.3194 (1993).
[21]. J. H. Oaknin, J. J. Palacios, L. Brey, and C. Tejedor, Phys. Rev. B 49, pp.5718 (1994).
[22]. L. Wang, J. K. Zhang, and A. R. Bishop, Phys. Rev. Lett. 73, pp.585 (1994).
[23]. Dietmar Weinmann, Wolfang H¨ausler, and Bernhard Kramer,Phys. Rev. Lett. 74, pp.984 (1995).
[24]. Arkadiusz W´ojs and Pawel Hawrylak, Phys. Rev. B 56, pp.13227 (1997).
[25]. A.G.C. Haubrich, D.A. Wharam, H. Kriegelstein, S. Manus, A. Lorke, and J.P. Kotthaus,A.C. Gossard, Appl. Phys. Lett. 70, pp.3251 (1997).
[26]. Hiroshi Imamura, Hideo Aoki, and Peter A. Maksym, Phys. Rev. B 57, pp.R4257 (1998).
[27]. Bart Partoens and Frangois M. Peeters,” Density Functional Theory Approachto Artificial Molecules”, 2001 American Institute of Physics
[28]. A.W. Holleitner, C.R. Decker, H. Qin, K. Eberl, R.H. Blick, Phys. Rev. Lett. 87, pp.256802 (2001).
[29]. A.W. Holleitner, R.H. Blick, H. Qin, A.K. H¨uttel, K. Eberl, J.P. Kotthaus, Physica E 12, pp. 774 (2002).
[30]. A.W. Holleitner, R.H. Blick, A.K. H¨uttel, K. Eberl and J.P. Kotthaus, Science 297, pp.70 (2002).
[31]. R.H. Blicka, A.K. Huttel, A.W. Holleitner, E.M. Hohberger, H. Qin,J. Kirschbaum, J. Weber,W. Wegscheider, M. Bichler, K. Eberl, J.P. Kotthaus, Physica E 16 pp76 (2003)
[32]. Xuedong Hu,.S. Das. Sarma, arXiv:cond-mat/0307024 v1 1 Jul (2003).
[33]. nano.nchc.org.tw/dictionary/quantum_dots.php
[34]. M. E. Rubin et al. Phys. Rev. Lett. 77, pp.5268 (1996).
[35]. M. A. Reed et al. Phys. Rev. Lett. 60, pp.535 (1988).
[36]. M. A. Kastner The single electron transistor and artificial atoms Ann. Phys.9 ,pp.885 (2000).
[37]. U. Meirav and E. B. Foxman, Semicond. Sci. Technol. 10, pp.255 (1995)
[38]. H.Ahmed, K.Nakazato,Microelectronic Engineering 32 , pp.297 (1996)
[39]. U Meirav and E B Foxman, Single-electron phenomena in semiconductors, Semicond. Sci. Technol. 11 pp.255 (1996).
[40]. G.J.Dolan, Appl. Phys. Lett.31, pp.337 (1997)
[41]. U. Meirav, M. A. Kastner, and S. J. Wind, Phys.Rev.lett.65 pp.771 (1990)
[42]. K. Nakazato, T.J. Thornton,J. White,H. Ahmed, Appl.phys.lett. 61,pp.3145 (1992)
[43]. H. Pothier, J. Weis, R. J. Haug, and K. v. Klitzing, Appl. Phys. Lett..62 ,pp.3174 (1993)
[44]. H.Matsuoka, T.Ichiguchi, T.Yoshimura, and E.Takeda , Appl. Phys. Lett.64, pp.586 (1994)
[45]. D. Ali and H. Ahmed, Coulomb blockade in a silicon tunnel junction device, Appl. Phys. Lett..64, p2119 (1994)
[46]. DAVID K.FERRY,STEPHEN M.GOODNICK, “Transport in nanostructures” (1997)
[47]. W. Chen, H. Ahmed, and K. Nakazoto, Appl. Phys. Lett.,66,pp.3383
(1995)
[48]. M. A. Kastner, The single electron transistor and artificial atoms, Ann. Phys,9 , pp.885-894 (2000)
[49]. Suk-Kang SUNG., Dae Hwan KIM, Jae-Sung SIM, Kyung Rok KIM, Jpn. J. Appl. Phys. Vol. 41 pp. 2606–2610 (2002)
[50]. T. H. Oosterkamp , T. Fujisawa , W. G. van der Wiel , K. Ishibashi , R. V. Hijman , S. Tarucha , L. P. Kouwenhoven, Nature 395 ,pp.873 (1998)
[51]. 黃吉川 謝金源 李哲明,量子計算與資訊,科學發展期刊,
363期 (2003)
[52]. F. Hofmann, T. Heinzel, D.A. Wharam, and J.P. Kotthaus, Phys. Rev. B 51 (1995)
[53]. Toshimasa Fujisawa, Tjerk H. Oosterkamp, Wilfred G. van der Wiel, Benno W. Broer, Ramón Aguado, Seigo Tarucha, and Leo P. Kouwenhoven, Science 30; 282: pp.932-935 (1998)
[54]. N. C. van der Vaart, S. F. Godijn, Y. V. Nazarov, C. J. P. M. Harmans, and J. E. Mooij,Phys. Rev. Lett. 74, pp.4702 (1995)
[55]. W. G. van der Wiel, S. De Franceschi and J. M. Elzerman, T. Fujisawa, S. Tarucha, L. P. Kouwenhoven,” Electron transport through double quantum dots” (2002)
[56]. R. H. Blick, R. J. Haug, J. Weis, D. Pfannkuche, K. v. Klitzing, and K. Eberl, Phys. Rev. B 53, pp. 7899 (1996).
[57]. van der Wiel, W. G., T. Fujisawa, T. H. Oosterkamp, and L. P. Kouwenhoven, Physica B 272, pp.31 (1999).
[58]. T. H. Stoof and Yu. V. Nazarov, Phys. Rev. B 53, pp.1050 (1996).
[59]. B.L.Hazelzet, M.R.Wegewijs, T.H.Stoof,and Yu.V.Nazarov, Phys. Rev. B 63, pp.165313 (2001).
[60]. D.K.Ferry,Quantum Mechanics:An introduction for device physicists and electrical engineers,IOP Publishing, London,1995.
[61]. G. T. Einevoll and L. J. Sham, Phys. Rev.B49,pp.10533(1994)
[62]. D. J. BenDaniel and C. B. Duke, Phys. Rev. 152,pp. 683-692(1996).
[63]. F. R. Waugh, M. J. Berry, D. J. Mar, and R. M. Westervelt, ,Phys. Rev. Lett. 75, pp.705 (1995)
[64]. Arthur Beiser著,王唯農,袁偉堅譯”近代物理概論”國立編譯館出版,世界書局印行
[65]. R. Ziegler, C. Bruder, Herbert Schoeller“Transport Through Double Quantum Dots”1999
[66]. Richord Turton著 ,李雅明譯,”IC如何創新”天下文化