本研究以磁控濺鍍 (RF-sputter)方式，使用氧化鋅(Aluminum-doped Zinc-Oxide , AZO)靶材在玻璃基板上沉積氧化鋅透明導電薄膜做為成長氧化鋅奈米線 (Zinc-Oxide Nanowires)的成核層。利用化學溶液法，將硝酸鋅水合物(Zn(NO3)2．6H2O, Zinc-nitrate hexahydrate)和六亞甲四酸(C6H12N4 , Hexamethylenetetramine, HMT)在特定的實驗參數下產生反應，並過飽和析出在AZO 透明導電薄膜。本研究中主要探討不同的氧化鋅奈米線成長條件對於AZO 透明導電薄膜的穿透率與片電阻值的影響，其中包含改變成長時間、莫耳濃度和成長溫度，觀察其成長氧化鋅奈米線之直徑、長度和分佈密度的變化。本實驗結果利用掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)觀察氧化鋅奈米線的表面形態，微結構方面藉由低掠角入射X光繞射來測定，而在穿透率量測與片電阻值量測分別使用PerkinElmer的LAMBDATM 950 UV/Vis/NIR光譜儀和MCP-T610的四點探針(Four-point probe)。經由本研究成果顯示，在反應濃度20mM下成長氧化鋅奈米線30分鐘，其改善穿透率效果以成長溫度60℃與90℃為佳。

Radio frequency (RF) magnetron sputtering system was employed to deposit AZO film on glass substrate as seed layer, which was used to grow aligned one-dimensional nanowire of single-crystalline zinc oxide (ZnO) using chemical solution method at low-temperature. Aqueous solution of zinc nitrate hydrate and methenamine were used in this study. We wanted to know the effect of Surface ZnO nanowires on the transmission and sheet resistance of transparent conducting oxide thin flims with different grew condition of ZnO nanowires, including changes grow time, concentration, and temperature. Investigations were carried out to probe how the diameter, length, and number density of ZnO nanowires varied as the conditions changed. SEM were used to examine the morphology of the ZnO nanowires. The microstructure was investigated by glazing incident X-ray diffraction. Transmission and sheet resistance were measured by UV/Vis/NIR and Four-point probe method. This study showed that we can get ZnO nanowires with improving transmission in the chemical solution with the concentration 20 mM, the growing time 30 minutes, and at temperature about 60℃ and 90℃.

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