| 研究生: |
鄭世賢 Cheng, Shih-Hsien |
|---|---|
| 論文名稱: |
添加金屬於類鑽碳膜之結構及其性質研究 Investigation of structure and properties in diamond-like carbon film with metal additive |
| 指導教授: |
黃肇瑞
Huang, Jow-Lay |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2007 |
| 畢業學年度: | 95 |
| 語文別: | 中文 |
| 論文頁數: | 93 |
| 中文關鍵詞: | 陰極電弧沈積法 、類鑽碳 、含銅的類鑽碳膜 、電子場發射 |
| 外文關鍵詞: | a-C:Cu film, Cathodic arc deposition, Field emission, Diamond-Like Carbon (DLC) |
| 相關次數: | 點閱:67 下載:1 |
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由於類鑽碳擁有類似鑽石的性質,如耐磨耗、化學抗腐蝕及高熱傳導性等等,加上鍍膜製程簡單,被視為極有潛力的材料之一。本研究嘗試以陰極電弧沈積法的方式,將銅與石墨共鍍形成含銅的類鑽碳膜,藉由改變銅電弧電流量來控制銅的含量。目的在於探討銅的加入對於類鑽碳膜的表面型態、結構以及場發射性質之影響。
實驗結果顯示隨著銅含量增加,發現粗糙度提高並且表面尖錐數量增加及細化的現象,但銅在膜中分佈均勻。而且經由ESCA分析銅碳鍵結,發現沒有形成銅碳化合物,並且類鑽碳膜中sp2鍵結增多,使其ID/IG比值增加,但卻因為銅導入類鑽碳膜中使得壓應力獲得釋放,造成拉曼光譜的G peak往低波數偏移。含銅的類鑽碳膜電阻率下降至2.47×10-3 Ω-cm,降低了電子在膜內傳輸的阻抗,因此改善了電子場發射的性質,並起始電場強度從9.6V/μm降低到2.5V/μm。
Diamond-Like Carbon (DLC) films recently are regarded as one of the most promising materials because its simplification of the manufacturing process. In addition, like diamond DLC exhibits excellent characteristics, such as, wear resistance, chemical erosion resistivity, and high heat conductivity etc. In this study, cathodic arc deposition was used to synthesize a-C:Cu films with Cu metal and graphite targets. The content of Cu in the a-C:Cu films was controlled by different arc current of Cu target.
The results show that the roughness increased with the Cu content increasing and surface nanotips became more and finer in all a-C:Cu films. However, the distribution of Cu in the films was uniform. The binding energy analysis from ESCA spectra of C 1s and Cu 2p for a-C:Cu films indicated that there was no evidence of carbide formation and the effect of Cu addition has promoted the C sp2 bonding. This condition corresponds with the Gaussian fitting results of ID/IG value. The shift of G peak position toward lower wavenumber is because of the releasing of compressive stress in a-C:Cu films by the addition of Cu. The lowest resistance of the films is 2.47×10-3 Ω-cm and the field emission test results show that the electron emission properties could be improved by reducing the applied electric turn-on field from 9.6 to 2.5 V/mm. The reason is that the resistance of the electron transportation in a-C:Cu films was reduced by the addition of Cu.
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