由於隨著無線通訊系統日新月異，從通訊頻率需求的領域提升到毫米波。研究上對於毫米波前端電路的發展日趨蓬勃發展，以往毫米波電路需要更好的元件特性，大多採用SiGe BiCMOS或是III-V族化合物半導體製程來實現。但是隨著CMOS製程技術演進，其價格相較於BiCMOS及III-V族化合物半導體低廉，而且其在超高頻的收發機電路設計中甚有不錯的效能表現。因此本論文針對V-band毫米波前端電路的壓控振盪器與混頻器設計採用CMOS製程來研製。晶片製作均使用國家晶片中心提供之標準的TSMC先進的90-nm製程來實現。
本論文主要分為三部分，第一部分收集目前發展較普遍的通訊系統並介紹60-GHz頻帶WPAN應用與其相關研究背景。第二部分為實作一顆V-band毫米波寬頻差動LC壓控振盪器晶片，使用電壓調整可切換式傳輸線電容的技巧。量測結果顯示：電路從49.56 GHz到54.08 GHz有8.7% 的可調頻率範圍；距中心頻率1MHz時最好的相位雜訊為-93.2-dBc/Hz；壓控振盪器核心部分的功率消耗為10.8mW；輸出功率在頻率範圍內皆大於-17.8dBm。第三部分除了介紹混頻器與四相位壓控振盪器的基礎理論，特別注重在次諧波混頻器的背景與設計。完成一個V-band混頻器與Ka-band四相位壓控振盪器整合電路的Layout與下線。該電路可應用於60-GHz頻帶直接降頻接收器，由57-64-GHz RF訊號與1/2LO混頻出500MHz IF訊號。其中，我們比較兩組模擬數據：一組為-22-dBm P-1dB、並有高達12-dB轉換增益與-12-dBm IIP3；另一組為-14-dBm P-1dB、並有高達3.5-dB轉換增益與0-dBm IIP3，且都有良好的Port-to-port Isolation。依據所提出的電路的效能表現，使用TSMC CMOS 90-nm先進製程，可以實現毫米波先端電路的設計，並且有助於未來完成60-GHz V-band收發機整合之可行性。

Owing to the advances of wireless communication systems, the operation frequency moves from radio-frequency up to millimeter-wave. The development of millimeter-wave front-end has been prospering in research. High-frequency circuits need devices with better properties in the SiGe BiCMOS or III-V compound semiconductor technology. Now with utilizing a low-cost and advanced CMOS process, we can design the transceivers operated at the UHF band. All the circuits proposed are implemented in TSMC’s 90-nm CMOS process provided by CIC. A V-band VCO and a sub-harmonic mixer with Ka-band QVCO have been designed mainly in this thesis.
In the first part of this thesis, we gather prevalent communication systems nowadays and introduce the related research background about 60-GHz band WPAN applications. A V-band millimeter-wave wideband CMOS LC-VCO has been implemented in the second part. By using a voltage-tuning transmission-line switchable capacitor technique, the VCO with 8.7% FTR from 49.56 GHz to 54.08 GHz exhibits a best phase noise of -93.2-dBc/Hz at 1MHz offset. The VCO core consumes 10.8 mW as the output power is better than -17.8 dBm over the whole tuning frequency range. The third part, besides the fundamentals of Mixer and QVCO, is focused on the sub-harmonic mixer design, in which a V-band sub-harmonic mixer integrated with Ka-band QVCO integration is simulated and tapped out in this part. It is designed for a 60-GHz band direct-conversion receiver with a 500-MHz bandwidth IF band with half of LO frequency pumping in from 57-64-GHz RF band. Two sets of Simulation data have been compared and shown: one has the P-1dB of -22 dBm, conversion gain of up to 12 dB and IIP3 of -12 dBm; while the other has the P-1dB of -14 dBm, conversion gian of close to 3.5 dB and IIP3 of 0 dBm. They both perform good port-to-port isolations. With regard to the circuit performance, they’re suitable for the block design in millimeter-wave front-end by utilizing TSMC’s advanced CMOS 90-nm process, which is helpful to the completeness of 60-GHz V-band front-end transceiver integration in the future.

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