本論文係探討利用鈉掺雜與碘摻雜來成長正負型五環素有機薄膜的一系列研究。吾人利用SEM及AFM來檢查有機薄膜的表面形態、FTIR與PL來研究鍵結及能隙大小，並量測正負性二極體特性來判定正負掺雜的有效性。最後依其正負性的特性來研製PEN/Si/PEN(NPN、PNP)異質接面雙極性光電晶體，研究不同薄膜成長參數對其光暗電流及增益值的影響。實驗結果中吾人發現，鈉與碘的摻雜的確能使有機材料產生錯合物而形成類似矽基板具有正型及負型整流的之電壓–電流特性曲線。
此外吾人發現所發展出的雙極性電晶體不照光電流在以醋酸鈉及碘掺雜時，不會有顯著之電流增益(β=1.3~1.8)，但照光後電流增益變大(β=2.9~4)。但如以醯銨鈉掺雜時在不照光電流卻有顯著之電流增益(β=19)，但照光後之增益(β=3.6)卻與前兩者相去不遠。因此吾人認為不照光電流的增益應與摻雜材料有關，而光電流增益則應與矽基板之材質有關。

In this thesis, we study utilizing the Na dopant and the I2 dopant to prepare p type and n type Pentacene organic thin films on n type and p type Si substrates, respectively. We use SEM and AFM to analyze the films’ morphology, while FTIR and PL for bond structure and band gap. The Schottky and ohmic characteristics of the organic/Si heterojunctions (pn, np, pp, and nn) are examined with measuring I-V curve. Besides, p- Pentacene /n-Si/ p- Pentacene and n-Pentacene /p-Si/ n- Pentacene hetero-junction bipolar phototransistors were prepared and its DC I-V curves with and without light irradiation were measured, respectively. Without light irradiation, the current gain of the bipolar transistor is 1.3~1.8 with CH3COONa or I2 dopants, while under light illumination, the β is raised to 3~4. However, if the NaNH2 is used as dopant, the β is improved to19 for dark, but under light illumination, the β is almost no changed (~3.6), which is similar to use CH3COONa as dopant. Hence, we suspect the dark current gain is related to dopant, while the photo current gain is dominated by the Si substrate. Moreover, the parameters affect the transistor’s dark current, photo current, and β.

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