在本論文中，首先針對以雞蛋白製作有機非揮發性電阻式記憶體並詳細探討元件之電特性以及記憶體轉換特性。藉由電流電壓特性分析得知元件的電流傳輸，於OFF狀態時以熱產生自由載子(Thermally generated free carriers)和空間電荷侷限電流(Space charge limited current)兩種傳輸理論為主，當元件切換至ON狀態時，載子傳輸則是以歐姆定律的型式移動，而這元件的ON/OFF轉換特性都是由燈絲傳導機制(Filamentary conduction)所造成，其機制可藉由元件轉換到ON狀態的限制電流和轉換到OFF狀態前的最高電流的線性關係證明。元件都具有不錯的開關切換之能力(>500次)以及大的開關電流比(~103)。除此之外，元件都可以在十萬秒內保持穩定的ON和OFF狀態。
以金奈米粒子(Au nanoparticles, Au-NPs)和硒化鎘/硫化鋅量子點(CdSe/ZnS quantum dots, QDs)兩種奈米子來製作雞蛋白記憶體元件為本論文之研究重點，元件的ON/OFF轉換主要特性轉變為載子抓取/釋放傳導機制(Charge trapping/de-trapping conduction)所造成。元件之做法是將奈米粒子以旋轉塗佈(spin-coating)以及接觸壓印(contact-printing)兩種方式嵌入雞蛋白薄膜內。當金奈米粒子以旋轉塗佈方式沉積時，元件之穩定度可被顯著提升，於ON和OFF狀態之電流都可以持續穩定維持超過一百萬秒，另外也發現元件的重複寫入和抹除的能力與所設定之操作電壓有關。當寫入、抹除、讀取電壓分別被設於-1、2和0.1伏特時，元件的切換次數可超過1500次，伴隨電流開關比為 ~104。而當量子點薄膜以接觸壓印方式沉積時，可以得到幾乎相同之結果。另外我們也發現將此方法用於元件面積微小化時，可以改善元件本身之良率問題，而當面積為0.64 mm2時元件良率可達96%。

In the thesis, the resistive switching devices of metal/insulator/metal (MIM) structure with Chicken Albumen have been fabricated and characterized. The operation mechanisms of the fabricated devices are analyzed by theoretical models. The conduction mechanisms of both of the Albumen-devices at OFF state are attributed to the thermally generated free carriers and space charge limited current, while the current transport at ON state appears to abide the Ohm's Law. The switching behaviors observed in both devices are due to the filamentary conduction mechanism, which can be confirmed by the relationship between the turn-on compliance current and turn-off current. The Albumen-devices demonstrate a good switching property (>500 cycles), large on/off current ratio (~103). Moreover, the ON and OFF state current are stable for 105 seconds at a reading voltage of + 0.1 V.
Additionally, this article also presents the nonvolatile memory effects in the NPs film, where inorganic semiconductor NPs, including Au-NPs or CdSe/ZnS QDs, are embedded in the Chicken Albumen films formed by using the spin-coating and contact-printing methods. The major memory behavior of the Albumen-NPs device is due to Charge trapping/de-trapping conduction effect. For the Albumen-Au NPs device by spin-coating, the conductance of ON state was different from that of OFF state by a factor of 1 × 104 at 0.1 V reading voltage. And, the Albumen-Au NPs device showed higher stability and reliability in characteristics of retention and endurance measurement. The switching cycles could be up to 1500 times when the writing and erasing operations were performed by pulse signals of -1 V/ 10 ms and 2.5 V/ 10 ms, respectively, and the ON and OFF sate were stable for 1 × 106 s with 0.1 V reading voltage. In the other hand, the Albumen-QDs devices by contact-printing have the similar memory properties to the Albumen-Au NPs devices. Moreover, the QDs film formed by contact-printing method improves the yield rate when the cell size of the Albumen-QDs device is minimized. The yield rate reaches 96% when the device area is 0.64 mm2.

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