本論文中利用低溫氣相冷凝系統(Vapor Cooling Condensation System)成長高品質之氧化鎂鋅薄膜，並研製氧化鎂鋅/氧化鋅/氧化鎂鋅雙層異質結構之p-i-n發光二極體元件來展示氧化鎂鋅薄膜之應用潛力。相較其他基板為高溫之製作方式，本研究在低溫環境下成長之薄膜可有效降低載子缺陷濃度成為高品質之薄膜，並有助於半導體元件製程之整合。
論文中低溫成長之氧化鎂鋅薄膜具有高絕緣性，其薄膜光學能隙為4.01電子伏特，鎂含量約佔28，且在X光繞射之量測分析上可觀察到氧化鎂鋅相較氧化鋅(002)晶相之繞射峰值32.95度，其(002)晶相繞射峰值在33.05度，有往大角度偏移之現象。
同時應用氧化鎂鋅/氧化鋅/氧化鎂鋅雙層異質結構作為p-i-n發光二極體元件之主動層，並以二氧化鈦及二氧化矽薄膜作元件之側面與表面護佈減少漏電流，同時以主動層僅為氧化鋅薄膜之p-i-n發光二極體元件作為對照。兩組p-i-n發光二極體元件之電激發光峰值皆在380nm，但利用氧化鎂鋅/氧化鋅/氧化鎂鋅雙層異質結構之p-i-n發光二極體元件其電激發光頻譜發光峰值強度與發光功率分別增加3.08倍與1.82倍，因此藉由氧化鎂鋅與氧化鋅能階不連續使得載子侷限於主動層氧化鋅區域增加復合發光效率，可有效提升元件發光效率。由於藉由低溫氣相冷凝法成長之i-ZnO薄膜具有極低之缺陷濃度，故在電激發光頻譜可見光區域因氧缺陷造成之缺陷發光其發光強度相當微弱。

In this thesis, the high quality magnesium-zinc-oxide (MgZnO) thin film deposited by the vapor cooling condensation system was used to fabricate the MgZnO/ZnO/MgZnO double heterostructured-p-i-n light emitting diodes. Comparing with the other traditional high temperature processing method, the defect concentration of the MgZnO thin film deposited on substrate using the vapor cooling condensation system at low temperature was effectively reduced by using the cooling function of liquid nitrogen. The experimental results demonstrated the technology was helpful to the integration of semiconductor devices process.
The MgZnO thin film deposited by the vapor cooling condensation system in this work showed the excellent insulating ability. The optical energy band gap of the resulting MgZnO film was 4.01 eV. It could be deduced that the Mg content of the MgZnO film was about 28 %. The strong diffraction peak located at 33.05 and 32.95 were observed in the XRD pattern of the MgZnO and ZnO thin film corresponding to (0 0 2) plane. Comparing to the ZnO diffraction peak, a clear shift of the MgZnO (0 0 2) diffraction peak could be found, which was ascribed to the decrease of the c-axis lattice constant due to Mg incorporation.
The MgZnO/ZnO/MgZnO double heterostructrue was used as the active layer of the p-i-n light emitting diodes. The titanium dioxide (TiO2) and silicon dioxide (SiO2) thin film were utilized to passivate the device and to avoid leakage current. From the electroluminance spectra of two p-i-n light emitting diodes, their emitting peak was 380nm. However, the peak intensity and the total emission power of the MgZnO/ZnO/MgZnO p-i-n light emitting diodes were 3.08 times and 1.82 times higher than those of the p-AlGaN/i-ZnO/n-ZnO:In p-i-n light emitting diodes. The performance improvement of the MgZnO/ZnO/MgZnO p-i-n light emitting diodes was attributed to the confinement of electrons and holes made by MgZnO barrier layers, and the enhancement of the radiative recombination rate in the active ZnO layer. Moreover, the EL intensity of the emission at the visible region induced by the oxygen vacancy in the i-ZnO layer of the p-i-n LEDs was small enough. It was attributed to the reduced defect concentration in the i-ZnO layer deposited by the vapor cooling condensation system.

第一章 緒論
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第二章 背景理論
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第三章元件製程
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第四章 元件量測與結果討論
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