本論文利用分子束磊晶系統成長ZnO薄膜，藉由摻雜Co、Al來形成具有良好電性及室溫鐵磁性的樣品，進一步的深入了解磁性的來源。我們設計兩組實驗來對照，實驗(一)調變(Co,ZnO)中Al摻雜的濃度探討傳遞載子對ZnO稀磁性半導體之磁性變化，實驗(二)成長不同結構，將相同濃度的(Co、Al)摻雜入ZnO造成不同結構的(Co、Al)ZnO，研究除了傳遞載子之外，磁性的影響。
實驗(一)，有雜Al的樣品其磁化量較未參雜Al的樣品來的大，而實驗(二)中卻是結構缺陷多的磁化量較結構缺陷少的樣品來的大；由實驗(二)來看磁性似乎還是由結構缺陷所支配，而雜Al的樣品其電性與磁性上沒有明顯的相依性，所以猜測實驗(一)中雜Al的樣品磁性大於未摻雜Al的樣品，可能是因為Al3+(0.39Ǻ)的離子半徑較Zn2+(0.6Ǻ)來的小，當Al3+取代Zn2+時有可能造成微結構的缺陷，而這個微結構的缺陷有可能形成束縛極化子來增加貢獻磁性。
因此不論在高或低載子濃度區之ZnO稀磁性半導體，磁性來源還是由束縛磁極化子(BMP)所支配。

We use Molecular Beam Epitaxy (MBE) to deposit ZnO thin films and form fine electrical property and room temperature ferromagnetism (RTFM) by Co、Al codoped，We try to understand the origin of ferromagnetism 。We design two experiments，In group(一) we modify Al quantity in Co/ZnO thin films to discuss that the effect of carrier ，In group(二) we deposit different structure of ZnO that codoped similar quantity of (Co、Al)。
In group(一) that ferromagnetism of Co/Al/ZnO thin film is
Greater than Co/ZnO thin film，In group(二) that Co/Al/ZnO thin film which sample have more structural defect that own larger ferromagnetism。
Regardless of Diluted Magnetic Semiconductor(DMS) of ZnO is in high carrier or low carrier region that the origin of ferromagnetism domainate by Bound Magnetic Polaron Model(BMP)。

[ 1.1 ] 黃榮俊, 自旋電子之研究與發展, 物理雙月刊（廿六卷四期）
[ 1.2 ] 胡裕民, III-V稀磁性半導體薄膜之研究與發展, 物理雙月刊（廿六卷四期）
[ 1.3 ] G. a. Prinz, Science , 282, 1660 (1998).
[ 1.4 ] F. Matsukura, H. Ohno, A. Shen et al. , Phys. Rev. B , 57, R2037 (1998).
[ 1.5 ] H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y.Iye, Appl. Phys. Lett. , 69, 363 (1996).
[ 1.6 ] H. Munekata, H. Ohno, S. von Molnar, A. Segmuller, L. L. chang, and L.Esaki, Phys. Rev. Lett. , 63, 1849 (1989).
[ 1.7 ] H. Akai, Phys. Rev. Lett. , 81, 3002 (1998).
[ 1.8 ] H. Ohno, H. Munekata, T. Penneys S. von Molnar, and L. L. chang, Phys.Rev. Lett. , 68, 2664 (1992).
[1.9] Dietl, T., Semicond. Sci. Technol. (2002) 17 (14), 377
[1.10] Y.Igasaki and H.Saito,Thin Solid Films ,223.199(1991)
[1.11] T.Deitl,and H.Ohno et al，Science 287(2000)1019
[1.12] Jae Hyun Kim, Hyojin Kim, Woong Kil Choo JAP 92 10 2002
18
[1.13] Jung H. Park, Min G. Kim, Hyun M. Jang, APL 84 8 2004
[1.14] M. Venkatesan, J. M. D. Coey ，APL 90, 242508 2007
[1.15] D. Chakraborti,G. Trichy, and J. Narayan，JAP102, 113908 2007
[1.16] S. Ramachandran, J. T. Prater APL 88, 242503 2006
[1.17] G. L. Liu, Q. Cao, J. X. Deng,APL 90, 052504 2007
[1.18] L. Liao, H. B. Lu，APL 102, 114307 2007
[1.19] A.J. Behan, A. Mokhtari, PRL 100, 047206 (2008)
[2.1] J.C.A. Huang, Ph.D. Thesis, Univ. of Illinois
[2.2] B. Heinrich, J.A.C. Bland, Ultrathin Magnetic Structure
I, Springer-Verlag,New York (1994)
[2.3] F.C.Frank and J.H.Van der Merwe，Proc.Roy.Soc.A198(1948)
216
[2.4]N.Stranski and L.Krastanov，Ber.Akas.Wiss.Wien
146(1938)797
[2.5]M.Volmer and A.Weber，Z.Phys.Chem 119(1926)277
[2.6] E.Bauer, Appl. Surf. Sci. 11/12,479(1982)
[2.7] B. Heinrich, J.A.C. Bland, Ultrathin Magnetic Structure
I, Springer-Verlag,New York (1994)
[2.8] B. Dodson, Phys. Rev. B, 36, 6288 (1987)
[2.9] W. Wulfhekel, F. Zavaliche, R. Hertel, S. Bodea, G.
Steierl, G. Liu, andJ. Kirschner, Phys. Rev. B
68,144416(2003)
[2.10] P.J. Berlowitz, J.W. He, and D.W. Goodman, Surf. Sci.
231, 315 (1990)
[2.11] H.J. Elmers and J. Hauschild, Surf. Sci. 320, 134 (1994)
[2.12] Robert C. OHandley, Moden Magnetic Materials
Principles and Applications(1999)
[2.13] Soshin Chikazumi, 磁性物理學
[2.14] C. Kittel, Introduction of Solid State Physics, 7th ed,
John Wiley & Sons inc., NewYork (1997)
[2.15] B. D. Cullity, Introduction to Magnetic Materials,
Addison Wesley , New York(1972)
[2.16]R. C. O'Handley, Modern Magnetic Materials, John Wiley
& Sons inc.,
[2.17] 聶亨芸，國立清華大學碩士論文 (2002)
[2.18] Dietl, T., Semicond. Sci. Technol. (2002) 17 (14), 377
[2.19] 吳俊斌，國立中山大學物理研究所(2004)
[2.20] Dana A.Schwartz and Daniel R.Gamelin，
Adv.Mater.16(2004)NO.23-24
[2.21] C.Zener，Phy.Rev.82(1951)403
[2.22] P.W.Anderson and H.Hasegawa，Phys.Rev.100(1955)675
[2.23] D.R.Gamelin and E.L.Bominaar et al.，
J.Am.Chem.Soc.118(1996)8085
[2.24] H.Akai et.al，Phys .Rev.Lett.81(1998)3002
35
[2.25] J.Konig et.al，Phys.Rev.Lett.84(2000) 5628
[2.26] J.Konig et.al，Phys.Rev.Lett.86(2001) 5637
[2.27] K.A.Griffin and A.B.Pakhomov et al.，
Phys.Rev.Lett.94(2005) 157204
[2.28] V.I.Litvinov et al，Phys.Rev.Lett.86(2001)5593
[2.29] M.Berciu et al，Phys.Rev.Lett.86(2001)107203
[2.30] J.M.D.Coey et al，Nature Material，vol.4(2005)173
[3.1] M . A. Herman and H.Sitter,e.g.Molecular Beam Epitaxy,
Berlin Springer1989
[ 3.2 ] J.J.Rehr, C. H. Booth, F. Bridges, and S. I. Zabinsky,
Phys. Rev. B 49, 12347(1994)
[ 3.3 ] F.Bridges, C. H. Booth, and G. G. Li, Physical B 208&209,
121 (1995)
[ 3.4 ] Boon K. Teo, EXAFS：Basic Principle and Data Analysis,
Springer-Verlag,New York (1986)
[ 3.5 ] D.C.Koningsberger, and R. Prins, X-Ray Absorption：
Principles,
[ 3.6 ] Application, Techniques of EXAFS, SEXAFS and XANES, John
Wiley, NewYork (1988)
[3.7] 施敏，半導體元件物理與製作技術,23-47,(1997)
[3.8] 廖敏婷，國立中央大學物理研究所(2005)
[4.1] X H Xu, H J Blythe, New Journal of Physics 8 (2006) 135
[4.2] Sejoon.Lee,Deuk Young Kim ,Current Applied Physics 7
156-159(2007)
[4.3]Sang Yoon Park,Phil Jin Kim ,Young Pak Lee
ADVANCED MATERIALS 19 3496-3500(2007)
[4.4] 邱淑琳 國立成功大學物理研究所(2007)
[4.5] Kevin R. Kittilstved and Daniel R. Gamelin et al.，Phys.
Rev. Lett. 97 (2006) 037203
[4.6] B.E.Sernelius , K.F.Berggern , Phys. Rev. B 37, 10244 -102408 (1988)
[4.7] Xiao-Li Li, JOURNAL OF APPLIED PHYSICS 103, 023911 2008