本篇文章分析了閘極後退火處理對於的氮化鋁鎵/氮化鋁/氮化鎵奈米通道高電子
遷移率電晶體之電性的影響，其通道長度分別為 200,400,600,800 奈米且填充因子
為 0.45。在 10 分鐘攝氏 400 度的閘極後退火處理後，可發現 NC-HEMT 的直流電性參
數有系統性的提升。透過二次離子質譜儀分析在攝氏 200 度、 300 度、 400 度以及
500 度退火下的 NC-HEMT 以找出最佳的閘極後退火條件。由結果可知當退火溫度高於
400 度時，閘極金屬(鎳/金)將會擴散至 AlGaN/AlN/GaN 的主動層進而劣化元件特性。
在通道長度為 200 奈米的 NC-HEMT 元件中，可觀察到透過閘極後退火可移除因電感
耦合電漿乾式蝕刻所造成的淺陷阱，因此將蕭特基位障高度由原本的 0.42 電子伏特
提升至 1.40 電子伏特，進而顯著地降低閘極漏電流約 3 個數量級。
此外，以氧化鋁/二氧化矽作為閘極介電層的 AlGaN/GaN HEMT 可利用陷阱輔
助技術以達到類似快閃記憶體之功能。此元件展示了在相對較低的讀寫偏壓(3 伏特)
下，臨界電壓向正向大幅度偏移了 4.6 伏特，因此達到-0.3 伏特的臨界電壓及 575V
毫安培-毫米的最大汲極電流。在閘極介電層沉積前以紫外光/臭氧表面處理，使
GaN/氧化物介面處可產生 GaOxNY 的薄層，而此層可作為陷阱輔助層，為讀寫偏壓得
以降低的主要原因。根據 C-V 測量結果，造成大幅度臨界電壓正偏移的陷阱密度高
達 5.7*1012 每平方公分。這些陷阱可歸類為介面或氧化層的缺陷。由於氧化鋁與二
氧化矽的介面品質良好，使得 MIS-HEMT 相較於傳統 HEMT 有更低的閘極漏電流。此
類似快閃記憶體的 MIS-HEMT 元件擁有 123 毫西門子/毫米的轉移電導、 1.7*1017的開
關比、 121 的次臨界擺幅以及 7.5*10-9的閘極漏電流。
表面鈍化處理對於 MOS-HEMT 的電流崩塌、其他元件特性的提升與可靠度而言
十分重要。本篇文章中，我們將會展示在沉積二氧化矽前，施加紫外光/臭氧表面鈍
化處理在 AlGaN/AlN/GaN MOS-HEMT 上。我們使用 X 射線光電子能譜來驗證在 GaN 表面鈍化有所提升。由於紫外光/臭氧表面處理造成二氧化矽/氮化鎵介面的能帶彎曲，
進而使得 MOS-HEMT 的臨界電壓正向偏移。此外，元件的電流崩塌現象、磁滯效應以
及 1/f 特性由於 HfSiOX 鈍化層而有所改善。綜合上述兩種鈍化方式，使得介面陷阱
得以大幅度地減少，而使得使用二氧化矽的 MOS-HEMT 電流崩塌幅度由原來的 10%改
善至 0.6%。透過上述兩種方式鈍化的 MOS-HEMT 有著 655 毫安培每毫米的最大汲極電流、 116毫西門子每毫米的轉移電導、約107的開關比、 85的次臨界擺幅以及9.1*10-
10安培每毫米的閘極漏電流。
我們展示了擁有目前最佳特性值的雙浮動閘極與多重浮動閘極的 MOS-HEMT，
其閘極間距分別為 0.25 微米與 0.5 微米。多重浮動閘極 MOS-HEMT 的特性值達到 1.8，其歸因於 425 伏特的崩潰電壓 0.105 毫歐姆-平方公分的 Ron,sp。我們分別以定性、定量的討論部分掘入場板結構對於多重浮動閘極 MOS-HEMT 特性有何提升。元件的電場分佈也可由 Silvaco 電場模擬的結果來驗證。排列良好、高密度的二維電子雲與高效閘極調變能力的多重浮動閘極 MOS-HEMT 展示了 597 毫安培每毫米的最大汲極電流、截止頻率為 16GHz、最大振盪頻率為 23GHz 與 26.7%的功率轉換效率。

The effects of a post-gate annealing (PGA) treatment on the electrical performance of AlGaN/AlN/GaN nanochannel high electron mobility transistors (NC-HEMTs) with channel widths of 200, 400, 600, and 800 nm for a constant fill factor of 0.45 were analyzed. A systematic improvement in the DC parameters was observed in the NC-HEMTs after PGA treatment at 400 °C for 10 min. Secondary ion mass spectroscopy was performed at 300 °C, 400 °C, and 500 °C on 10-
min annealed and as-deposited NC-HEMT to optimize the PGA conditions. Annealing at higher temperatures (> 400 °C) could cause the diffusion of the gate metal (Ni/Au) into the AlGaN/AlN/GaN active layer, which subsequently degrades the device performance. The removal of shallow traps, which were created by ICP dry etching, after the PGA treatment improved the Schottky barrier height
(ΦB) from 0.42 eV to 1.40 eV and resulted in a significant reduction in the gate leakage current (IG) of approximately three orders of magnitude in the NC-HEMT with a channel width of 200 nm.
Moreover, a flash-like Al2O3/SiO2 stacked layer AlGaN/GaN-based metal insulator
semiconductor HEMT (MIS-HEMT) was fabricated using trap-assisted technique. The MIS-HEMT showed a large positive shifting of threshold voltage (ΔVTH) of 4.6 V after applying a low program voltage (VP) of 3 V, resulting in a very low ΔVTH of −0.3 V with a decent maximum drain current (IDMAX) of 575 mA m m−1. Ultraviolet-ozone (UV/O3) surface treatment was performed prior to gate
dielectric deposition to produce a thin gallium oxynitride (GaOXNY) layer, which correspondingly acts as a charge trapping layer, at the GaN/oxide interface, resulting in the reduction in VP. Capacitance–voltage (C–V) measurements revealed that the traps contributing to the significant positive shifting of VTH had a density of 5.7 × 1012 cm−2. These traps were attributed to the border or oxide defects. A significant reduction in IG of more than three orders of magnitude was found in MISHEMT due to the high-quality Al2O3/SiO2 stack gate dielectric layer compared with conventional HEMT. The flash-like stack layered programmed MIS-HEMT exhibited a GMMAX of 123 mS mm−1, an on–off ratio of 1.7 × 107, and a subthreshold slope of 121 mV dec−1 with a reduced gate leakage current of 7.5 × 10−9 A mm−1. Surface passivation is critically important to improve the current collapse and the overall device performance in metal-oxide semiconductor HEMTs (MOS-HEMTs) and thus, their reliability. In this paper, the surface passivation effects in AlGaN/AlN/GaN-based MOS-HEMTs were demonstrated using UV/O3 plasma treatment prior to SiO2-gate dielectric deposition. X-ray photoelectron spectroscopy was used to verify the improved passivation of the GaN surface. The
ΔVTH of MOS-HEMT was shifted towards positive due to the band bending at the SiO2/GaN interface by UV/O3 surface treatment. In addition, the device performance, especially the current collapse, hysteresis, and 1/f characteristics, was further significantly improved with an additional 15 nm-thick hafnium silicate (HfSiOX) passivation layer after the gate metallization. Due to the combined effects
of UV/O3 plasma treatment and HfSiOX surface passivation, the magnitude of the interface trap density was effectively reduced, which further improved the current collapse significantly in SiO2- MOS-HEMT to 0.6% from 10%. The UV/O3-surface-modified, HfSiOX-passivated MOS-HEMT exhibited a decent performance, with an IDMAX of 655 mA/mm, a GMMAX of 116 mS/mm, a higher ION/IOFF ratio of approximately 107, and a subthreshold swing of 85 mV/dec with significantly
reduced gate leakage current (IG) of 9.1 × 10−10 A/mm. This work demonstrated dual-gate floating metal and multi-gate floating metal (MGFM) AlGaN/GaN metal oxide semiconductor high-electron-mobility transistors (MOS-HEMTs) with
state-of the-art figure of merit (FOM) for two inter-gate spacings (IGSs; i.e., 0.25 and 0.5 µm). The three-terminal off-state breakdown voltage of 425 V with a low specific on-resistance of 0.105 mΩ·cm2 resulted in an excellent FOM of 1.8 GW/cm2 for MGFM MOS-HEMT (IGS = 0.5 µm). Qualitative/quantitative discussion was carried out to understand the improved performance metrices of MGFM MOS-HEMT by using a partially recessed field plate structure. The electric field distribution was also verified by Silvaco electric field simulation. Well-resorted high-density twodimensional electron gas and efficient gate modulation endowed MGFM MOS-HEMT with a decent maximum drain current density of 597 mA/mm, a cut-off frequency of 16 GHz, a maximum oscillation frequency of 23 GHz, and a power-added efficiency of 26.7%.

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