本論文中首先提出可應用於高速紅外光偵測之應變矽/矽鍺碳/矽異質結構p-i-n光二極體。吾人利用具有較高載子遷移率的應變矽 (strain Si) 層來提升元件響應特性，並使用快速昇溫化學氣相沈積系統 (RTCVD) 於矽基板上異質磊晶成長高品質矽鍺碳 (Si1-x-yGexCy) 薄膜作為主要吸收層。藉由通入價格低廉的丙烷 (C3H8) 氣體作為晶格常數較小的碳原子源，以成長較高臨界厚度 (critical thickness) 之矽鍺碳薄膜來增加紅外光吸收，進而提高元件的靈敏度。此外，在成長矽鍺碳薄膜前，吾人預先將矽基板背面經由蝕刻處理成凹槽狀，減少串聯電阻與增加元件散熱速度。除此之外，吾人更進一步詳細研究覆蓋應變矽層所生應力對元件特性之影響。其結果顯示，相較於傳統無應變矽層或未經凹槽基板蝕刻處理之一般紅外光偵測元件，此元件具有更佳的性能。
接著吾人利用電化學陽極蝕刻法 (electrochemical anodization, ECA) 分別於矽基板與碳化矽 (β-SiC) 薄膜表面蝕刻出多孔結構，形成多孔矽 (porous silicon, PS) 與多孔碳化矽 (porous silicon carbide, PSC) 作為氮碳化矽/矽與氮化鎵/矽異質接面之緩衝層，並成功製作出可應用於紫外光偵測之氮碳化矽/多孔矽異質接面p-n結構光二極體與氮化鎵/多孔碳化矽/矽異質接面MSM結構光感測元件。實驗發現，相較於直接成長於矽基板上無多孔緩衝層結構的一般元件，本論文所發展之新結構元件具有較佳的光電特性，如光暗電流比值 (PDCR)、響應度及量子效率等。經由拉曼分析儀 (Ramam) 與光激光譜儀 (photoluminance spectra) 分析其界面間的應力，證實此海綿狀 (sponge-like) 的多孔結構緩衝層，可有效釋放界面間的應力，減少界面間晶格不匹配所造成的缺陷，因而有助於在其表面上之異質磊晶薄膜的成核與成長。另一方面多孔結構的高電阻特性，也能有效抑制紫外光偵測元件在高溫環境時所增加的漏電流，及增加吸光面積，進而提升元件效能。
最後，吾人先於常壓燒結且具有多晶結構的碳化矽 (pressureless-sintering ceramic SiC, ce-SiC) 陶瓷基板上成長碳化矽 (α-SiC) 緩衝層，再於其上製作氮化鎵/碳化矽/陶瓷碳化矽異質接面之MSM結構紫外光感測元件，並與矽基板上成長相同結構之元件進行比較。吾人發現在陶瓷碳化矽基板上所研製之元件與在矽基板研製的氮化鎵/多孔碳化矽/矽異質接面紫外光感測元件有相近光暗電流比值，且具有低成本與簡單製程等優點，使其更有應用之潛力。

In this dissertation, the p-strain Si/i-Si1-x-yGexCy/n-Si p-i-n photodiode was developed firstly for fast infrared (IR) detecting. We employ the p-strain Si to speed up the detector response, and a high quality i-Si1-x-yGexCy film as main absorber. The i-Si1-x-yGexCy was grown expitaxially on n-Si substrate in a rapid thermal chemical vapor deposition (RTCVD) system with C3H8 as carbon (C) source. With the addition of C-atoms, the i-Si1-x-yGexCy could be grown with a thicker critical thickness to absorb more quantity of IR light, thus in turn improving sensitivity. Besides, the n-Si substrate was etched preferentially for reduction of series resistance and accelerating the heat dissipation. As a result, the developed device achieved a better performance than that of the conventional one without the strain Si or the preferentially etched substrate. Furthermore, the effects of the strain from the capped strain Si layer on the device』s performances were studied in details.
Next, we used the porous silicon (PS) and the porous SiC (PSC), respectively on the surface of Si substrates as buffer layers to grow the SiCN/Si and GaN/Si heterojunctions for development of n-SiCN/p-PS/p-Si photodiode and MSM GaN/PSC/n-Si photodetector for ultraviolet (UV) detecting. These porous buffer layers provide sponge-like structure to limit the development of strain and cracks after the post growth cooling, thus favoring the nucleation to result a better epitaxial film, and has a high resistivity to suppress the dark current. The strain is analyzed by both Ramam and photoluminance (PL) spectra. Experimental results indicate that the developed devices have better optoelectronic properties such as photo/dark current ratio (PDCR), responsivity and quantum efficiencies than that of the conventional one without the porous treatment.
Finally, the developed GaN/PSC/n-Si photodetector was compared to the one of GaN on pressureless-sintering ceramic SiC (ce-SiC) substrate with poly α-SiC buffer layer. Both devices have almost the same PDCR, but the GaN/poly α-SiC/ce-SiC device possesses the simpler preparing process, and the lower cost substrate.

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