本論文主要為寬能隙半導體之特性研究與應用，其中可分為氮化鎵紫外光檢測器
及氧化鋅材料系列元件。
首先在氮化鎵紫外光檢測器方面，我們成功於矽基板上製作氮化鎵光檢測器，在
入射波長365 nm 時，以鎢化鈦及鎳金屬製作之氮化鎵金半金型紫外光光檢測器的最
大響應度分別為187 與 79.2 mA/W，而相對應之最大量子效率分別為64.7%與
27.4%。在頻寬1kHz 和偏壓5V 下，進而推算出元件最低雜訊等效功率分別為
1.525×10-12W 與5.119×10-12W ， 而所對應之的正規化檢測度分別為
1.313×1012cmHz0.5W-1 與3.914×1011 cmHz0.5W-1。另外，並發現在矽基板上之金半金型
光檢測器的電流-電壓特性近似於普爾-法蘭克傳輸機制，這種現象歸因於微晶粒結構
出現在矽基板上之磊晶層內，而矽基板上之氮化鎵金半金型光檢測器隨電壓變化的響
應也證明了在磊晶層裡的微晶粒結構的存在。在低頻時，氮化鎵光檢測器之雜訊主要
為1/ f 形式，此外，從矽基板上之氮化鎵金半金型光檢測器得到極低的β 值（~0.7）
更是首次被發現。
至於氧化鋅磊晶方面，利用分子束磊晶法成功將氧化鋅成長於矽基板上，並發現
氧化鋅磊晶層表面形成奈米島狀結構，而其密度、平均直徑及平均高度分別為
1.25×109 cm-2、300 nm、150 nm。就氧化鋅發光二極體方面，成功於藍寶石基板上製
作出P 型氮化鎵與N 型氧化鋅之異質結構的二極體。藉由光激發頻譜與電致激光發
頻譜得知，發光機制主要是來自於氮化鎵磊晶層之缺陷放射所造成。在氧化鋅光檢測
器方面，在入射波長365nm 與施加電場500V/cm 時，以鎳金屬製作之氧化鋅光電導
檢測器的最大響應度為54mA/W，而相對應之最大量子效率分別為2.8%，此時暫態
響應的衰減時間常數為0.556ms。而光檢測器的低頻雜訊表現為1/ f 主導。在頻寬
1kHz 和偏壓5V 下，進而推算出元件雜訊等效功率分別為1.83×10-6W，而所對應之
的正規化檢測度為6.91×105cmHz0.5W-1。
在氧化鋅奈米結構方面，利用濺鍍鋅薄膜與低溫氧化法來成長高密度氧化鋅奈米
結構於玻璃基板上。從陰極發光頻譜得知，位於512nm 之發射頻譜主要由氧空缺所
支配。並分別製作紫外光光檢測器與酒精氣體感測器。在紫外光光檢測器元件方面，
發現暫態響應下降與上升衰減時間常數分別為3.9ms 與20.35ms。在酒精感測器方
面，當固定酒精濃度為50 ppm 時，改變量測溫度為70°C、80°C、90°C 和100°C 時，
響應分別為12%、21%、51%和72%。因此，當固定溫度於100°C 時，改變酒精濃度
為10、20、50 和100 ppm 時，響應分別為42%、66%、71%和76%。
最後，我們以氣相傳輸沉積法成功研製氧化鋅奈米碳管之酒精感測器。從穿透式
電子顯微鏡的結構分析中，可以得知氧化鋅奈米碳管屬於多晶結構。而當固定酒精濃
度為100 ppm 時，改變量測溫度為90°C、120°C、150°C、180°C 和230°C 時，響應分
別為34%、76%、77%、77%和87%。因此，當固定溫度於230°C 時，改變酒精濃度
為5、10、20、50 和100 ppm 時，響應分別為51%、61%、67%、80%和87%。

The main goal of this dissertation is the fabrications and analyses of Wide Bandgap
Semiconductors. Hence, the dissertation is divided into two parts, one is the investigation
of nitride-based UV photodetectors, and the other is that of ZnO-based devices (UV
photodetectors, LED, gas sensor). In the beginning of this dissertation, GaN ultraviolet
MSM photodetectors electrodes grown on Si substrates were prepared. It was found that
dark currents of PDs prepared on Si substrates were much smaller than that prepared on
sapphire substrate. With an incident wavelength of 359 nm, it was found that the
maximum responsivities for the GaN MSM photodetectors with TiW and Ni/Au contact
electrodes were 0.187 and 0.0792A/W, which corresponds to quantum efficiencies of
64.7 and 27.4%, respectively. For a given bandwidth of 1k Hz and a given bias of 5V, it
was found that the corresponding noise equivalent power of our n--GaN MSM
photodetectors with TiW and Ni/Au electrodes were 1.525×10−12 and 5.119×10−12W,
respectively. Furthermore, it was found that the corresponding D* were 1.313×1012 and
3.914×1011 cm Hz0.5W−1, respectively. Another, The conductive mechanism was
suspected that the carriers need to penetrate the grain boundaries in silicon-substrate
MSM PDs. This substrateinduced effect also caused the voltage-dependent responsivity
and large fitting parameter, S0, for these GaN PDs prepared on the silicon substrate. The
spectral noise density of siliconsubstrated PDs increased as SI～I3 at high current and as
SI～I0.7 at low current. Such a low β value for PDs prepared on the silicon substrate was
first mentioned and associated with the micro grains of the epitaxy layer.
ZnO epitaxial layers was successfully grown on nitridated Si(100) substrate with
double buffer layers by MBE. It was found that the HT-GaN buffer was crystalline with
both hexagonal and cubic phases. It was also found that numerous cone-shaped
nano-islands were formed on the ZnO epitaxial layers with density, average diameter and
average height of 1.25×109 cm-2, 300 nm and 150 nm, respectively. In addition, the carrier
depletion taking place in underlying GaN was responsible for a further decrease in electron
concentration down to 1 × 1019 cm−3. For LED, we have detailed the growth, processing,
and fabrication of an n-ZnO/p-GaN heterojunction light emitting diode on a c-Al2O3
substrate, and characterized the electroluminescence from this device. By comparing PL
and EL spectra, it is concluded that the deep-level defect-emission emerged mainly from
the GaN epitaxial layer. For photoconductive sensors, we report the fabrication of ZnO
photoconductive sensors epitaxially grown on sapphire substrates with interdigitated Ni/Au
electrodes. With an incident light wavelength of 365 nm and an applied electric field of
500 V/cm, it was found that maximum responsivity and quantum efficiency were
respectively around 54 mA/W and 2.8 % while time constant of the decay transient was
τ~0.556 ms. In addition, with a 5 V applied bias, it was found that NEP and normalized
detectivity of the fabricated sensors were 1.83×10-6 W and 6.91x105 cmHz0.5W-1,
respectively.
On the other hand, high-density ZnO nanoflakes and nanowires were grown on glass
substrates by the RF sputtering deposition of Zn particles and localization oxidation at low
temperature 300°C. The as-grown ZnO nanoflakes and nanowires were polycrystalline and
had nanometer dimensions. A wide green emission band centered at 512nm dominates the
CL spectrum of the nanoflakes and nanowires, and is attributed to oxygen vacancies. The
photocurrent-to-dark current contrast ratio of the ZnO photodetector herein was 5.2 while
time constant were τf ~3.9ms and τr ~20.35ms. Another, the resistivity of the fabricated
nanostructure sensor decreased upon injection of ethanol gas. Introducing 50ppm of
ethanol gas yielded device sensitivities of approximately 12%, 21%, 51% and 72% when
the gas sensor was operated at 70°C, 80°C, 90°C and 100°C, respectively. Furthermore, the
device response measured at 100°C were around 42%, 66%, 71% and 76% when the
concentration of injected ethanol gas was 10, 20, 50 and 100 ppm, respectively.
Finally, We report the growth of ZnO nanotubes on patterned Au/Al2O3/Au/RuO2
templates by reactive evaporation and the fabrication of ZnO nanotube ethanol gas sensor.
It was found that the as-grown ZnO nanotubes were polycrystalline and with holes at
terminals and on sidewalls. By introducing 100 ppm ethanol gas, it was found that the
device sensitivities were around 34%, 76%, 77%, 77% and 87% when the gas sensor was
operated at 90oC, 120oC, 150oC, 180oC and 230oC, respectively. Furthermore, it was found
that the device responsivities measured at 230°C were around 51%, 61%, 67%, 80% and
87% when the concentration of injected ethanol gas was 5, 10, 20, 50 and 100 ppm,
respectively.

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