本實驗利用離子束濺射系統(Ion Beam Sputter system)，製備大面積二硫化鉬薄膜(MoS2)在藍寶石基板上(Al2O3(0001))，利用IBS系統濺鍍鉬金屬在藍寶石(Al2O3(0001)) 基板上，再將2克硫粉放置上風處並通入氮氣至壓力為0.7 torr以及將樣品放置管爐中心升溫至800℃，升溫速率20℃/min，並探討改變持溫時間對薄膜品質的影響以及濺射不同厚度鉬金屬硫化後對於MoS2薄膜厚度的變化，藉由拉曼光譜儀(Raman Spectrometer)、X光光電子能譜(X-ray photoemission spectroscopy, XPS)與X光吸收光譜(X-ray absorption spectroscopy, XAS)做薄膜的定性分析中得知成功合成出不同層數的MoS2薄膜，在X光繞射(X-ray diffraction, XRD)的分析中樣品具有單晶c軸取向晶向，再以原子力顯微鏡(Atomic force microscope, AFM)、掃描穿隧電子顯微鏡(Scanning tunneling microscope, STM)、角分析光電子能譜(Angle resolved photoemission spectroscopy, ARPES)量測薄膜表面形貌以及能帶結構。

In this experiment, we prepared the large-area molybdenum disulfide (MoS2) film on a c plane sapphire substrate by the Ion Beam Sputter (IBS) system and the tube furnace. The growth temperature for the samples was kept at 800 °C with heating rate of 20°C/min. The thickness of MoS2 were determined by pre-sputtering different thicknesses of molybdenum metal, and the sulfurization of time would affect the quality of MoS2. For elemental quality of MoS2 analysis through the Raman Spectrometer, X-ray photoemission spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). We confirmed that the film is monolayer MoS2 with Raman Shift delta k about 20cm-1 and PL peak about 1.85eV. We found that the sample has a single-crystalline c plane orientation by X-ray diffraction (XRD) analysis, and then we observe the morphology and the energy band structure of the MoS2 film from the Atomic force microscope (AFM), Scanning tunneling microscope (STM) and angle resolved photoemission spectroscopy (ARPES).

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