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研究生： 范姜孟含
FangChiang, Meng-Han
論文名稱： 改良式矽模具開發與其在逆壓印技術上之應用
The development of improved silicon mold and its application on reversal imprinting process
指導教授： 洪昭南
Hong, Chau-Nan Franklin
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2009
畢業學年度： 97
語文別： 中文
論文頁數： 148
中文關鍵詞： 矽模具 、奈米壓印
外文關鍵詞： nanoimprint, silicon mold
相關次數： 點閱：75  下載：6 
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    • 奈米壓印技術為一種新穎技術，其優勢為可取代傳統光學微影製程，大面積的複製圖案，甚至壓印至數奈米之線寬，是極具開發價值的技術。
    本論文中，主要分為三部分作為探討：其一為自組裝分子之選用應用於製備模具脫模層。藉由液相方式掺混不同體積比之自組裝分子，且以量測靜態接觸角之結果，進一步發展出選擇性填入無溶劑阻劑之模具。第二部份則是利用逆式壓印技術轉印圖形及製作3D圖案。將前一部分所製備出含有不同種類矽烷分子之模具，以逆式壓印技術將無溶劑的阻劑，藉由旋轉塗佈方式填入。因矽烷分子種類與製備方式不同、故存在其差異性，而使阻劑選擇性填入凹槽，不沾附於凸層，進而製作出無殘餘層的圖案化阻劑。此技術之優勢為選用的是無溶劑阻劑，因此不會因溶劑揮發而產生的嚴重收縮現象，且不需要操作在高溫與高施壓的環境下，可增加後續蝕刻的成功率，且可直接疊印於非平整表面，並製作出3D立體結構圖案的阻劑。
    第三部份是以濕式蝕刻方式製備矽模具。實驗結果發現在蝕刻液(硝酸：氫氟酸：醋酸= 3：5：3)添加10 wt%螯合劑(EAcAc)時，有停止蝕刻的現象；但當以相同比例在紫外光曝照下，卻有蝕刻現象發生。顯示加入螯合劑的確可控制蝕刻進行與否。最後，雖然蝕刻結果未達理想，但也發展出另一種控制啟動濕蝕刻的機制。

    Nanoimprinting is a cutting-edge technology that offers a new approach to photolithography, with the potential to produce imprints far superior to those that use more traditional methods. The process is capable of imprinting to nano-scale lines width for the large area.
    This thesis is divided into three parts: Firstly, a self-assembled mono-layer is chosen and applied to make an anti-stick surface mold. Three different kinds of silane SAM including different volume ratio is mixed by solution method and measure static contact angle static of these samples above. According to the result, A simple process and a optional filled non-solvent resist mold is developed. Secondly, pattern can be transferred to substrates and 3-dimension image is fabricated by reversal imprinting. By means of spin-coating by reversal imprinting technique, epoxy resin and photoresist fills into concavity. Due to the properties of every silane SAM and making method are different, the epoxy resin is stuff into concavity optionally, making a patterned resist without residual layer. The advantage of this technique is that using a non-solvent resist won’t result in shrinkage due to solvent evaporation. It reduces many of the variables thus adding to the probability of a successful etching process. Ultimately, 3-dimensional structure resist can be fabricated on a non-palar surface without removing residual layer.
    The thesis will also discuss how to make a silicon mold by wet etching. The result shows that the etching process will be stopped when 10 wt% chelating agent( EAcAc) is added to the etching agent( HNO3：HF：CH3COOH = 3：5：3). However, if the process above is carried out under UV light, the result is reversed. It shows the chelating agent is capable of controlling the etching. Although the experiment results are not good enough, it develops another kind of switch of the wet etching action.

    中文摘要 I 英文摘要 II 誌謝 III 目錄 IV 表目錄 IX 圖目錄 XI 第一章 序論 1 1-1 前言 1 1-2 微奈米壓印製造技術之發展與其關鍵技術 2 1-3 研究動機 9 第二章 理論基礎與文獻回顧 10 2-1 微奈米轉印技術簡介 10 2-2 改良式壓印技術 20 2-3 脫膜層製作技術及原理 27 2-4 電漿原理 32 2-5 電漿中的化學反應 37 2-5-1 電漿反應的特性 37 2-5-2 氣相中的化學反應 39 2-6 表面分析 41 2-6-1 表面張力 41 2-6-2 接觸角 41 2-7 濕式化學蝕刻 46 2-7-1 濕式化學蝕刻簡介 46 2-7-2 濕式化學蝕刻原理 46 2-8 實驗鑑定儀器之原理 50 2-8-1 場效高解析掃瞄式電子顯微鏡 50 2-8-2 原子力顯微鏡 51 2-8-3 表面輪廓粗度儀 52 2-8-4 接觸角分析儀 52 第三章 實驗參數與研究方法 55 3-1 實驗流程 55 3-1-1 矽模具表面改質技術 55 3-1-2 以逆式壓印技術應用於無殘餘層圖案轉移 56 3-1-3 改良式濕蝕刻製備矽模具 57 3-2 實驗系統設計 58 3-2-1 壓印機 58 3-2-2 氧電漿處理及乾式蝕刻（RIE）系統 58 3-2-2-1 抽氣系統 58 3-2-2-2 壓力監控系統 58 3-2-2-3 流量控制系統 59 3-2-2-4 脈衝式直流電源供應器 59 3-3 實驗材料 61 3-3-1 基板材料 61 3-3-2 實驗藝品 61 3-3-3 基板清洗溶劑及實驗氣體 63 3-4 實驗步驟 64 3-4-1 脫膜層製備 64 3-4-1-1 微接觸印壓法 64 3-4-1-2 液相法 65 3-4-1-3 模具凸層凹槽不同脫膜層之製備 66 3-4-2 無殘餘層圖形轉印 68 3-4-2-1 熱壓成形轉印 68 3-4-2-2 紫外光硬化成形轉印 69 3-4-3 改良式濕蝕刻製備矽模具 71 3-4-3-1 無紫外光曝照製備矽模具 71 3-4-3-2 紫外光曝照製備矽模具 72 3-5 實驗鑑定 73 3-5-1 表面型態觀察 73 3-5-2 表面靜態與動態接觸角分析 73 第四章 矽模具改質技術及其在逆壓印上之應用 75 4-1 前言 75 4-2 自組裝分子之選用 76 4-2-1 接觸角分析探討 76 4-3 模具表面改質及分析 86 4-3-1 接觸角分析探討 86 4-3-2 原子力顯微鏡之探討 94 4-3-3 表面粗糙度影響探討 98 4-4 環氧樹脂阻劑選擇性填入之探討 100 4-4-1 無殘餘層圖案轉印之探討 100 4-4-2 3D立體圖案結構之製作及探討 107 4-5 感光型高分子阻劑選擇性填入之探討 113 4-5-1 無殘餘層圖案轉印之探討 113 4-5-2 3D立體圖案結構之製作及探討 117 4-6 小結 120 第五章 改良式濕蝕刻製備矽模具 121 5-1 前言 121 5-2 阻檔蝕刻層之選用 122 5-3 蝕刻情形探討 123 5-3-1 以純蝕刻液蝕刻情形探討 123 5-3-2 添加不同比例螯合劑於蝕刻液中蝕刻情形探討 125 5-3-2-1 無曝照紫外光蝕刻情形探討 125 5-3-2-2 以紫外光曝照蝕刻情形探討 131 5-4 小結 139 第六章 總 結 140 參考文獻 142

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