本實驗是透過分子束磊晶(MBE)成長硒化鉍拓樸絕緣體摻雜銻及鉻之20奈米薄膜，由反射式電子高能繞射(RHEED)、X-ray繞射分析(XRD)及原子力顯微鏡(AFM)去觀察不同參數的樣品晶格結構，經過成大微奈米中心的微影系統將樣品製作成Hall bar元件以便量測精準電性，元素分析及能帶結構分別是在國家同步輻射中心(NSRRC)進行X光射線電子能譜(XPS)及 角分辨光電子能譜(ARPES)之量測，再將已選好之最佳成長參數樣品送去量測PPMS，藉由量測樣品之磁阻變化可分別在有摻雜磁性原子鉻及無摻雜磁性原子鉻之拓樸絕緣體看到弱返局域性(WAL)及弱局域性(WL)的轉變；另外，我們也可藉由磁導的曲線變化證明在硒化鉍拓樸絕緣體共摻替及鉻中，固定鉻的含量且增加銻的含量可有效增加磁性對於局域性的影響，進一步推論，我們可以在避免過量摻雜磁性造成的結構破壞的狀況下，單純增加銻的含量就可以去提高樣品的居禮溫度(Tc)。

Sb doped and Cr doped Bi2Se3 topological insulators have been established on sapphire (0001) substrate by molecular beam epitaxy (MBE). Structural characterization and electrical properties were verified by in-situ reflection high energy electron diffraction (RHEED), ex-situ atomic force microscopy (AFM), X-ray diffraction (XRD) and carrier density measurements. The real concentration of each element in our sample were verified by X-ray photoelectron spectroscopy (XPS) and the band structure of samples were revealed by angle-resolved photoemission spectroscopies (ARPES). The weak-anti localization (WAL) and weak localization (WL) performance were investigated in Sb doped Bi2Se3 and Cr-doped Bi2Se3 through the magnetoconductivity. Further increase Sb doping with Cr-doping fixed would enhance WL behavior in Sb,Cr co-doped Bi2Se3. In addition, the curie temperature of Cr-doped Bi2Se3 was observed by the exchanging performance of magnetoconductivity with the altering measured temperature.

第一章:
[1] C. L. Kane and E. J. Mele, Phys.Rev.Lett.95,226801(2005).
[2] J. E. Moore and L. Balents, Phys. Rev. B75,121396(2007).
[3] König M1, Wiedmann S, Brüne C, Roth A, Buhmann H, Molenkamp LW, Qi XL, Zhang SC. Science. Quantum spin hall insulator state on HgTe quantum wells.(2007).
[4] L. Fu, C. L. Kane, and E. J. Mele, Phys.Rev.Lett. 98,106803(2007).
[5] D. Hsieh, D. Quian, L. Wray, Y. Xia, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nature 452, 970(2008).
[6] X. L. Qi and S. C. Zhang, Phys.Today 63,33(2010)
[7] Joel E. Moore, The birth of topological insulator, Nature 464(2010).
[8] N. P. Butch, K. Kirshenbaum, P. Syers, A. B. Sushkov, G. S. Jenkins, H. D. Drew, and J. Paglione, Phys. Rev. B81,241301(2010).
[9] N. Bansal, Y. S. Kim, M. Brahlek, Eliav Edrey, and Seingshik Oh, Phys. Rev. Lett. 109,116804(2012).
[10] A. H. Castro Neto, F. Guinea, N.M.R. Peres, K. S. Novoselov, and A. K. Gein, Rev. Mod.Phys.81,109(2009).
[11] Y. Zhang, K. He, C. Z. Chang. L. L. Wang, X. Chen, J. F. Jia, X. C. Ma and Qi-Kun Xue, Appl. Phys. Lett. 97, 194102 (2010).
[12] Y. Zhang, K. He, C. Z. Chang, C. L. Song, L. L. Wang, X. Chen, and J. J. Jia, Z. Fang, X. Dai, W. Y. Shan, S. Q. Shen, Q. Niu, X. L. Qi, S. C. Zhang, X. C. Ma, and Q. K. Xue, Nat. Phys. 6, 584 (2010).
[13] Y. L. Chen, J.-H. Chu, J. G. Analytis, Z. K. Liu, K. Igarashi, H.-H. Kuo, X. L. Qi, S. K. Mo, R. G. Moore, D. H. Lu, M. Hashimoto, T. Sasagawa, S. C. Zhang, I. R. Fisher, Z. Hussain, Z. X. Shen. Science. Report. VOL 329(2010).
[14] Minhao Liu, Jinsong Zhang, Cui-Zu Chang, Zuocheng Zhang, Xiao Feng, Kang Li, Ke He, Li-li Wang,Xi Chen, Xi Dai, Zhong Fang, Qi-Kun Xue, Xucun Ma, and Yayu Wang,Appl. Phys. Lett. 108, 036805 (2012).
[15] Y. Xia et al., Nature Phys. 5, 398 (2009).
[16] H. J. Zhang et al., Nature Phys. 5, 438 (2009).
[17] S. K. Mishrayz, S. Satpathyyz and O. Jepsen, J. Phys: Condense. Matter 9, 461(1997)
[18] T. Thonhauser, T. J. Scheidemantel, J. V. Badding, and G. D. Mahan, Phys.Rev. B 68, 085201(2003).
[19] B. Ryu, M. O. Oh, B. S. Kim, J. E. Lee, S. J. Joo, B. K. Min, H. W. Lee, and S. Park , Thermalelectric Convention Research Center, KERI, Changwon 642-120 (2015).
[20] Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava and M. Z. Hasan, Nature Phys.5,399(2009).
[21] Y. Y. Li, G. Zhu, M. H. Liu, C. Ye, X. Chen, Y. Y. Wang, K. He, L. L. Wang, X. C. Ma, H. J. Zhang, X. Dai, Z. Fang, X. C. Xie, Y.Liu, X. L. Qi, J. F. Jia, S. C. Zhang, and Q. K. Xue, Adv. Mater. 22, 4004 (2010).
[22] Kou, X., Lang, M., Fan, Y., Jiang, Y., Nie, T., Zhang, J., ... & Wang, K. L. (2013). Interplay between different magnetisms in Cr-doped topological insulators. ACS nano, 7(10), 9205-9212.

第二章:
[1] J.C.A Huang, PhD. Thesis, University of Illionis (1992).
[2] D.B. Pengra, J. Stoltenberg, R. Van Dyck and O. Vilches, Hall effect (2015).
[3] Lee, P. A. and Ramakrishnan, T. V., “Disordered electronic systems”, Rev. Mod. Phys. 57, 287-337 (1985).
[4] Lu, H. Z. and Shen S. Q., Finite-temperature conductivity and magnetoconductivity of topological insulators", Phys. Rev. Lett. 112, 146601 (2014).
[5] Lu, H. Z., Shi, J. and Shen, S. Q., Competition between weak localization and antilocalization in topological surface states", Phys. Rev. Lett. 107, 076801 (2011).

第三章:
[1] Mustafa Yorulmaz, Molecular Beam Epitaxy
[2] J.C.A. Huang, PhD. Thesis, University of Illionis(1992).
[3] M.A. Herman and H. Sitter, Molecular Beam Epitaxy (Springer-Verlag, Berlin, 1989)
[4] Heather A. Bullen, PhD, Introduction to X-ray diffraction(XRD)
[5] R.A. Wilson and H.A. Bullen, Introduction to scanning Probe Microscopy
[6] Quantum Design, Physical Properties Measurement System manual (1999).

第四章:
[1] Y. Y. LI, G. Wang, X. G. Zhu, M.H. Liu, C. Ye, X. Chen, Y. Y. Wang, K. He, L. L. Wang, X. C. Ma, H. J. Zhang, X. C. Xie, Y. Liu, X. L. Qi, J. F. Jia, S. C. Zhang and Q. K. Xue, Adv.Mater.22,4002(2010).
[2] X. Chen, X. C. Ma, K. He, J. F. Jia, and Q.K. Xue, Adv.Mater.23, 1162(2011).
[3] Y. Zhang, K. He, C. Z. Chang. L. L. Wang, X. Chen, J. F. Jia, X. C. Ma and Qi-Kun Xue, Appl. Phys. Lett. 97, 194102 (2010).

第五章:
[1] H. Z. Lu, J. Shi and S. Q. Shen. ArXiv:1101.5437v3(2011).
[2] S. Hikami, A. I. Larkin, and Y. Nagaoka, Prog. Theor. Phys. 63, 707 (1980)
[3] T. Dietl, J. Phys. Soc. Jpn. 77, 031055 (2008).
[4] M. Liu, J. Zhang, C. Z. Chang, Z. Zhang, X. Feng, K. Li, K. He, L. L. Wang, X. Chen, X. Dai, Z. Fang, Q. K. Xue, X. Ma and Y. Wang. PRL. 108,036805(2012).