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研究生： 周恆宇
Chou, Heng-Yu
論文名稱： 濺鍍奈米結構氧化鉭金屬薄膜閘極之研究
Investigation of nano-structured TaN metal gate thin films using reactive sputtering
指導教授： 張高碩
Chang, Kao-Shuo
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2012
畢業學年度： 100
語文別： 英文
論文頁數： 77
中文關鍵詞： 氮化鉭 、磁控濺鍍 、金氧半結構 、金屬閘極
外文關鍵詞： TaN, reactive sputtering, MOS, metal gate
相關次數： 點閱：83  下載：1 
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    • 本實驗選用具有優異導電性、熱穩定性與可調式功函數的氮化鉭作為金氧半結構之金屬閘極的材料。利用磁控濺鍍製程成長均勻且大面積的氮化鉭薄膜，並藉由改變濺鍍功率與濺鍍壓力等製程參數，討論其對於氮化鉭薄膜之導電性質、表面形貌、結晶性、晶粒大小與功函數所帶來的影響。
    由實驗結果得知，當濺鍍功率大於85W，且濺鍍壓力小於7 mTorr時，可以成長出具有良好導電性與結晶性的氮化鉭薄膜。
    在濺鍍功率100W、濺鍍壓力5 mTorr下所成長的氮化鉭薄膜，所汲取之功函數為5.07 eV，適合應用在P-MOS材料的製程上。

    In this research, TaN is used as a metal gate due to its excellent conductivity, thermal stability, and tunable work function. A reactive magnetron sputtering system is used to deposit TaN thin films with various deposition parameters, such as the working pressures and deposition powers. The film thickness is measured by a profilometer. The sheet resistance is characterized by a four-point probe. The surface morphology and structures are characterized by scanning electron microscopy and X-ray diffraction, respectively. The electrical results are characterized by a probe station equipped with a LCR meter.
    The effects of different working pressures and working powers on sheet resistance, deposition rate, crystallinity, grain size, particle size and work functions are investigated in this research. We found the TaN thin films made at higher working power (> 85W) and lower deposition pressures (< 7 mTorr) are with reasonable good conductivity and nanocrystallinity. The work function of TaN made at 100W and 5 mTorr is 5.07 eV which is promising for P-MOS application.

    摘要 I Abstract II 誌謝 III Content V Figure content IX Table content XIV Chapter 1 Introduction 1 1-1 Application of TaN 2 1-2 Reactive magnetron sputtering system 4 1-2-1 RF sputtering system 5 1-2-2 Reactive sputtering system 5 1-2-3 Magnetron sputtering system 5 Chapter 2 Advanced gate stacks 7 2-1 Overview of high-κ gate dielectrics 7 2-2 Overview of metal gate electrodes 8 Chapter 3 Experiments 11 3-1 Materials 11 3-1-1 Silicon wafer 11 3-1-2 IMEC (Interuniversity Microelectronics Center) 12-inch wafer 11 3-1-3 Sputtering target 14 3-1-4 Sputtering gas 14 3-1-5 Annealing gas 15 3-1-6 Chemicals 15 3-2 Experimental procedure 16 3-2-1 Wafer cleaning 16 3-2-2 Photolithography 17 3-2-3 Sputtering of TaN thin films 20 3-2-4 Forming gas anneal 21 3-3 Characterizations 23 3-3-1 Electrical properties of as-deposited TaN thin film 23 3-3-2 C-V measurement of IMEC device 23 3-4 Fabrication equipment 25 3-4-1 Reactive magnetron sputtering system 25 3-4-2 Furnace 27 3-4-3 New Spin-coater 28 3-4-4 Single-side mask aligner 29 3-5 Characterization tools 30 3-5-1 Alpha-step profilometer 30 3-5-2 Four-point probe 31 3-5-3 2D X-ray diffractometer 32 3-5-4 High-resolution thermal field emission scanning electron microscopy (FE-SEM 7001) 33 3-5-5 C-V measurement system 34 4-1 Sheet resistance 35 4-1-1 100W RF power 35 4-1-2 85W RF power 37 4-1-3 75W and 65W RF power 39 4-2 Deposition rate 40 4-3 Structure analysis: the XRD results 41 4-3-1 100W RF power 41 4-3-2 85W RF power 43 4-3-3 75W, 65W and 55W RF power 44 4-3-4 100W, 85W, 75W, 65W and 50W RF power of the TaN thin films made at 5 mTorr 45 4-4 Grain size 46 4-5 Particle size 48 4-5 Electrical Characteristics: work function extraction of TaN 58 4-5-1 100W, 5 mTorr 63 Chapter 5 Conclusions and Future work 66 5-1 Conclusions 66 5-2 Future Work 67 References 68

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