| 研究生: |
吳囷原 Wu, Chun-Yuan |
|---|---|
| 論文名稱: |
直立成長二硫化錫二維奈米陣列光觸媒應用於光轉換二氧化碳之研究 Vertical growth of 2D SnS2 array photocatalysts for CO2 photoconversion |
| 指導教授: |
吳季珍
Wu, Jih-Jen |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2019 |
| 畢業學年度: | 107 |
| 語文別: | 中文 |
| 論文頁數: | 80 |
| 中文關鍵詞: | 二硫化錫 、二維奈米結構 、光觸媒 、直立成長陣列 、二氧化碳光轉換 、表面缺陷 、結晶性 |
| 外文關鍵詞: | tin disulfide, 2D-nanostructure, photocatalyst, vertical aligned array, CO2 photoconversion, surface defect, crystallinity |
| 相關次數: | 點閱:58 下載:0 |
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摘要
本研究成功地開發於FTO基板上成長直立片狀二硫化錫陣列之製程,並研究其光催化二氧化碳轉換之活性。首先,利用旋轉塗佈法製備二氧化錫種子層於FTO基板表面,繼以溶劑熱法於其上成長直立狀二硫化錫二維奈米陣列。經由XRD以及TEM得知,4小時成長的直立二硫化錫二維陣列(4h-V-SnS2)的結晶性較1小時成長者(1h-V-SnS2)佳。而以1h-V-SnS2與4h-V-SnS2為光觸媒催化二氧化碳轉換時,得到乙醛產量分別為88.4 mol/gcat與72.1 mol/gcat。推測原因為結晶性較差之1h-V-SnS2,可能有更多的活性點暴露,進而吸附更多二氧化碳以進行光催化反應。進一步將直立片狀二硫化錫奈米陣列,分別在惰性及硫氣氛下熱處理(Ar-1h-V-SnS2與S-1h-V-SnS2),改變樣品的表面狀態與結晶性,討論其對於二氧化碳光轉換效能的影響。以Ar-1h-V-SnS2與S-1h-V-SnS2進行光催化二氧化碳轉換反應時,可以得到乙醛產量分別為110 mol/gcat與82.6 mol/gcat。在Ar環境下熱處理,會使1h-V-SnS2結晶性提升,但同時形成Sn2S3相。結晶性提升可降低載子於光觸媒內之遷移障礙,而存在之缺硫相態,可能成為光催化之活性點,或是增進二氧化碳的吸附,進而增進光轉換的效能。
關鍵字: 二硫化錫、二維奈米結構、光觸媒、直立成長陣列、二氧化碳光轉換、表面缺陷、結晶性
In this work, vertically aligned SnS2 arrays have been successfully synthesized on SnO2 seeded FTO substrates by the solvothermal process. The SnS2 photocatalysts was employed to CO2 photoconversion experiment under batch reactor filled with CO2 (99.9999 %) with GC detectors to detect hydrocarbon components. The Ar-treated 1h-V-SnS2(Ar-1h-V-SnS2) photocatalyst shows photocatalytic CO2 conversion to acetaldehyde with the highest yield about 11 mol gat-1 h-1 compared to those of 1h-V-SnS2(8.84 mol gat-1 h-1) and Sulfur-vapor treated 1h-V-SnS2(8.26 mol gat-1 h-1). From the XRD and HR-TEM characterizations results, it showed the vacancy of sulfur in Ar-1h-V-SnS2, and we suggested that it might help the CO2 adsorption on the surface of SnS2 photocatalysts.
Key words: tin disulfide, 2D-nanostructure, photocatalyst, vertical aligned array, CO2 photoconversion, surface defect, crystallinity
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校內:2024-08-29公開