本論文主要研製毫米波CMOS 射頻晶片嵌入式天線，包含60-GHz CMOS 射頻嵌入式Yagi天線與帶通濾波器之整合晶片、平面倒F型天線、26-及77-GHz之雙頻碎形晶片嵌入式天線，以及毫米波CMOS寬頻對數週期性槽孔CPW射頻晶片嵌入式天線，且饋入系統皆採用共面波導之饋入架構，量測方面採用probe station on-wafer量測方式，可量測VSWR以及天線最大輻射增益，並且在內文中討論加入dummy後對天線輸入阻抗以及天線輻射效益之影響、製程下方的基底層對天線輻射效益以及天線輻射場型之影響，還有實際晶片切割對天線共振頻率之影響等。天線之模擬與研究皆使用3-D 全波電磁數值模擬軟體HFSS進行模擬。
60-GHz毫米波CMOS Yagi天線與帶通濾波器之整合晶片方面，晶片總面積包含dummy以及PADs為1.1 × 1.34 mm2；共振頻率57-64 GHz之S11皆小於-15 dB (VSWR < 1.5)，滿足所使用之頻帶；而天線輻射增益則為-14.057 dBi。在60-GHz CMOS 射頻晶片嵌入式平面倒F型天線方面，其晶片總面積包含dummy以及PADs為0.706 × 0.815 mm2；共振頻率57-64 GHz之VSWR值皆小於2；60-GHz天線輻射增益為-15.6 dBi。26-及77-GHz之雙頻碎形晶片嵌入式天線方面，晶片總面積為1.275 × 1.4 mm2 (包含dummy之實際面積)，共振頻率24.5-27.5及74-80 GHz之VSWR皆小於2。而天線輻射增益頻率在26-GHz中，模擬與量測結果分別為 -16.6 dBi與 -16.7 dBi；在77-GHz中，模擬為-7.05 dBi。毫米波CMOS寬頻對數週期性槽孔CPW射頻晶片嵌入式天線方面，天線輻射體則是採用寬頻對數週期性槽孔天線架構，主要達到寬頻效果。其晶片總面積(包含dummy之實際面積)為1.1 × 1.4 mm2，共振頻率31.1-110 GHz之VSWR小於2。最後為射頻晶片天線場型量測法，主要利用號角形天線量測天線輻射場型2D平面圖，成功量測出射頻晶片嵌入式天線之場型，並在內文中討論探討接收端接收到能量是否真正由整合晶片所輻射能量，可由討論中得知，接收端接收到能量的確為整合晶片所輻射能量。

This thesis presents the research on millimeter-wave CMOS on-chip antennas and measurement methodology. The CMOS on-chip antennas are fabricated by using a TSMC 0.18-μm 1P6M CMOS process. An FEM-based 3-D full-wave EM solver, HFSS, is used for design simulation. A 60-GHz CMOS integrated on-chip Yagi-antenna and bandpass filter, 60-GHz CMOS planar inverted-F, 26-/77-GHz dual-band fractal and broadband millimeter-wave CPW-fed log-periodic slot CMOS on-chip antennas are designed and fabricated. The on-wafer measurement is performed in a microwave probe station.

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