本文研究的主要目的是以金屬誘發的方式在非晶矽薄膜層誘發出多晶矽結晶，並探討氮化矽薄膜對結晶之均勻性的影響。本研究的實驗是以黃金做為誘發多晶矽結晶的材料，將製備完成的含與不含氮化矽薄膜之兩組不同結構的試片利用退火爐管來誘發多晶矽結晶。經蝕刻去除試片的金及氮化矽薄膜後，使用XRD、EDS、SEM及Raman Spectrometer等多項儀器作材料特性的分析，以了解不同的製程參數條件下多晶矽的結晶情況。由實驗的結果顯示，在試片的非晶矽薄膜上已經成功誘發出多晶矽結晶，此外，含氮化矽薄膜的試片相較於不含氮化矽薄膜的試片所誘發出的多晶矽結晶也較為均勻。實驗的製程參數可用來控制多晶矽的結晶生長情況。

The objectives of this study are to induce poly-silicon crystallization on an amorphous-silicon thin film by using metal-induced method, and to investigate the effect of silicon-nitride thin film on the uniformity of crystallization. In the experiment, gold was used to induce poly-silicon crystallization. Two groups of chips, with and without a SiNX thin film, were fabricated. Poly-silicon crystallization on the a-Si thin film was induced in a furnace. After both gold and silicon-nitride thin films were removed by wet etching, experimental instruments, such as XRD, EDS, SEM and Raman Spectrometer, were used in order to investigate material characteristics of the induced poly-silicon. Experimental results indicate that poly-silicon crystallization had successfully been induced on the amorphous-silicon thin film and was more uniformly distributed for chips with a SiNX thin film than those without a SiNX thin film. Parameters of fabrication process in the present experiment can be used to control the growth of poly-silicon crystallization.

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