本論文中，利用氧電漿輔助奈米球微影術來製作金屬奈米網。此方法主要是藉由氧電漿蝕刻技術來縮小奈米球遮罩的直徑，增加球體間孔隙的大小，控制蝕刻時間可以改變金屬奈米網的最小間距，蒸鍍不同的金屬包含鉻(Cr)、金(Au)，成功的製作出大面積的鉻奈米網陣列與金奈米網陣列，而鉻奈米網陣列主要能作為後續製作矽半導體奈米網的蝕刻遮罩，金奈米網陣列則是可以探討其表面電漿共振的特性。
矽半導體奈米網的部分，則是使用了上述製作出的鉻金屬奈米網當作蝕刻遮罩，利用乾式蝕刻和濕式蝕刻兩種方法，分別製作出與表層金屬網相似的圓形網狀陣列及延表層網洞晶格面往下蝕刻的方型網狀陣列，蝕刻結果發現乾蝕刻比較能保持大面積的蝕刻成功率，濕蝕刻則是會有很多破損的區域。我們也利用了絕緣層上矽(SOI)基板，製作出鉻金屬奈米網陣列，乾蝕刻矽，由於中間的二氧化矽能擋住矽的蝕刻，造成原先要往下吃的矽奈米網有些許的側蝕，已能成功製作出最小間距約為50nm的矽奈米網狀陣列。
本研究結合上述的氧電漿處理奈米球微影術搭配黃光微影製程，可成功製作出矽奈米網場效應電晶體。製程中，在絕緣層上矽(SOI)基板上利用氧電漿處理奈米球鏡微影術製作出鉻金屬奈米網，黃光微影定義出所需的感測區，蒸鍍二次鉻金屬，定義電極區形成乾蝕刻阻擋層，ICP乾蝕刻至二氧化矽絕緣層，除去鉻金屬鍍上鈦(Ti)金屬電極即可完成此元件，比較不同長寬比感測區的電性分析及不同最小間距的電性分析，其結果一併被整理與呈現。
綜上所論，本研究利用氧電漿處理奈米球微影術製作出金屬奈米網及矽半導體奈米網，並搭配黃光微影製程製作出矽奈米網場效應電晶體，相信此一技術在未來的奈米光電與生醫感測領域可以找到重要的發展與應用。

Silicon nanonet field-effect transistors are fabricated using top-down approach with the help from oxygen plasma-treated Nanosphere Lithography. Cr nanonet is first deposited on top of a silicon-on-insulator (SOI) wafer and silicon nanonet membrane can be obtained after the following silicon wet or dry etches. The sensor region and the electrons are defined using regular photolithography process and the device is operational after deposit the Ti contact pads. The electrical characteristics are measured and important parameters are subsequently extracted.In the future, we will finish fabricating the devices that can be operational using a liquid-gate electrode.We believe this device will be applied as economic sensor to detect chemical- or biological species in the near future.

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